Long Wave in GaAs Workshop in Napa Valley, CA
June 4th & 5th, 2002.
At this DARPA-sponsored workshop, in the beautiful surroundings of the Napa Valley, participants assessed the progress in GaAs-based devices for applications in the 1.3-1.5µm range . Two days of stimulating discussion and presentations revealed that there is rewarding work still to be done in this field, much of it in the area of non-commercial research.
List of Participants/ List of Abstracts/Photo Album
Click on the participant name to read the abstract of their presentations, and contact information.
Professor
Steve Brueck, CHTM
Giovanni Donati, CHTM
Professor Alfred Forchel,
University of Wurzburg, Germany
Professor Rachel S. Goldman, University of Michigan
Professor James S. Harris,
Stanford University
Professor Archie L. Holmes,
Jr University of Texas, Austin
Professor Diana Huffaker,
CHTM
Professor Shane R Johnson, Arizona State University
Professor Tomi Jouhti,
Optoelectronics Research Center, Tampere University of Technology
Professor Janne Kontinnen, Optoelectronics Research Center, Tampere University
of Technology
Professor Sanjay Krishna,
CHTM
Professor Luke Lester,
Zia Laser, Inc. Albuquerque, NM
Lt Colonel James A. Lott,
US Air Force
Professor Kevin Malloy,
CHTM
Professor Luke Mawst,
University of Wisconsin
Professor Marek Osinski,
CHTM
Dr. Gregory Peake, Sandia
Labs
Professor Joachim Piprek,
University of California, Santa Barbara
Professor Marcus Pessa, Optoelectronics Research Center, Tampere University
of Technology
Oleg Shchekin, University
of Texas, Austin
Dr Michael R.T. Tan, Agilent Technologies
Leslie Vaughn, CHTM
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GaAsSb/GaAs
photodiodes operating at 1300nm
Quantum dot versus GaInNAs
lasers for the 1.3 µm range and beyond
MOCVD-Grown Quantum Dots
for “Long-Wave on GaAs” Applications
Diluted Nitride Quantum Well
Structures and Lasers for 1.3-mm Fiber-optic Networks
Normal Incidence, Long-Wave
Infrared (l~8mm) InAs/In0.15Ga0.85As Dots-in-Well Detectors
Long Wavelength GaAs-based
Quantum Dot Lasers
High Performance MOCVD-Grown
InGaAsN Quantum Well Lasers
MOCVD growth and characterization
of InNAs/GaAs quantum wells on GaAs substrates
P-Doped 1.3 µm Quantum
Dot Lasers with High To.
Mid-infrared AlINAsSb/InAsSb
MQW Structures of GaSb
GaInNAsSb, A New Material in the Quest for Communications Lasers
Wafer-Bonded Long-Wavelength
Micro-Cavity Devices on GaAs
Strained
Semiconductor Alloys For Long Wavelength Devices of GaAs: A Single Band
Comparison
Materials Issues and Optical Properties of Narrow Gap Nitride Semiconductors
(Goldman)
Designs of 1.3micron InAs-InGaAs
Quantum Dot VCSELs on GaAs Substrates for Higher Optical Power Emission
Theoretical and Experimental
Investigations of GaAsSbN on GaAs substrates for 1.3-1.55 mm emission
on GaAs substrates