Center for High Technology Materials
1313 Goddard SE Rm. 106
Albuquerque NM 87106, USA
Tel: 505 272 7833  Fax: 505 272 7801
E-mail

 

Publications

  1. R. A. B. Devine and R. Dupree, "The g-shift of conduction electrons in lithium", Proceedings of XVth Colloque Ampère, (North Holland, 1969) p 386

  2. R. A. B. Devine and R. Dupree, "Spin lattice relaxation of conduction electrons in liquid sodium", Phys. Lett. 30A 211 (1969)

  3. R. A. B. Devine and R. Dupree, "Conduction electron spin resonance in liquid and solid sodium", Phil. Mag. 21 787 (1970)

  4. R. A. B. Devine and R. Dupree, "Spin lattice relaxation in liquid and solid potassium", Phil. Mag. 22 657 (1970)

  5. R. A. B. Devine and R. Dupree, "A comment on the spin lattice relaxation time in sodium and potassium", Phil. Mag. 22 1069 (1970)

  6. R. A. B. Devine and R. Dupree, "Electron spin scattering by alkali metal impurities in liquid sodium", Phil. Mag. 23 29 (1971)

  7. J. S. Helman and R. A. B. Devine, "Spin relaxation of conduction electrons in liquid metal alloys. I. Theory", Phys. Rev. B4 1153 (1971)

  8. R. A. B. Devine and J. S. Helman, "Spin relaxation of conduction electrons in liquid metal alloys; II. Sodium-Potassium", Phys. Rev. B4 1156 (1971)

  9. R. A. B. Devine and J. S. Helman, "Theory of the spin lattice relaxation of conduction electrons in solid and liquid metals", Phys. Rev. B4 4384 (1971)

  10. R. A. B. Devine, J. M. Moret, J. Ortelli, D. Shaltiel, W. Zingg and M. Peter, "The electron paramagnetic resonance of Dy in single crystals of Pd", Sol. State Comms. 10 575 (1972)

  11. R. A. B. Devine, O. Fischer and W. Zingg, "The electron paramagnetic  resonance of manganese in Mo1-xGa4Mnx", J. Low Temp. Phys. 7 319 (1972)

  12. J. S. Helman and R. A. B. Devine, "On a model structure factor for solid metals", Phys. Rev. B6 1607 (1972)

  13. R. A. B. Devine, W. Zingg and J. M. Moret, "The electron spin resonance of erbium in palladium", Sol. State Comms. 11 233 (1972)

  14. R. A. B. Devine, J. Ortelli, J. M. Moret, M. Peter, D. Shaltiel and W. Zingg, "The paramagnetic resonance of Gd in single crystals of Pd", Sol. State Comms. 11 525 (1972)

  15. R. A. B. Devine and J. M. Moret, "The hyperfine spectra of Er167 and Dy163 in Pd", Phys. Lett. 41A 11 (1972)

  16. J. S. Helman and R. A. B. Devine, "Theory of the spin relaxation of conduction electrons in liquid metals and their alloys", Proc. Second Int. Conf. on Props. Liq. Metals. (Taylor and Francis, 1973) p 415

  17. R. A. B. Devine and J. S. Helman, "Spin flip cross sections of Au, Ag and  Gd in Al", Phys. Rev. B7 1195 (1973)

  18. R. A. B. Devine, W. Zingg, D. Shaltiel and J. M. Moret, "The CEF groundstates for Er, Dy and Tm in YAl2", Sol. State Comms. 12 515 (1973)

  19. R. A. B. Devine and J. M. Dixon, "Conduction electron contribution to the electric field gradient in heavy rare-earth metals", Phys. Rev. B7 4902 (1973)

  20. R. A. B. Devine, "The interpretation of the crystal field groundstate of  Dy3+ in Pd", Sol. State Comms. 13 935 (1973)

  21. R. A. B. Devine, J. M. Dixon and A. Ludwig, "Localisation of 5d electrons in rare-earth metals", Phys. Lett. 45A 249 (1973)

  22. R. A. B. Devine, "Separation of 5d and 4f contributions to the electric field gradient in heavy rare-earth metals", Sol. State Comms. 13 1495 (1973)

  23. R. A. B. Devine and J. M. Moret, "Anisotropy in the paramagnetic resonance g-factor of manganese in zinc", Sol. State Comms. 14 1287 (1974)

  24. J. M. Moret, R. Orbach, M. Peter, D. Shaltiel, J. T. Suss, W. Zingg and R. A. B. Devine, "Exchange narrowing of the fine structure of Gd in single crystals of Pd", Phys. Rev. B11 2002 (1975)

  25. A. Ludwig and R. A. B. Devine, "Conduction electron contributions to the crystalline electric fields in transition metals", Can. J. Phys. 52 985 (1974)

  26. R. A. B. Devine, "On the crystalline electric field parameters for rare-earths in the Laves phase compounds", J. Phys. C7 L71 (1974)

  27. R. A. B. Devine, "d resonance effects associated with rare-earths and dilute rare-earth alloys", J. Phys. F4 1447 (1974)

  28. R. A. B. Devine, P. Jacques and M. Poirier, "Crystal field and clustering effects in the specific heat of Dy in Pd", Phys. Rev. B11 563 (1975)

  29. A. Ludwig and R. A. B. Devine, "Crystal field effects in the anomalous Hall effect", J. Low Temp. Phys. 21 665 (1975)

  30. R. A. B. Devine and J. C. H. Chiu, "Spin-spin interpretation of results in Zn-Mn", J. Low Temp. Phys. 21 557 (1975)

  31. R. A. B. Devine, M. Poirier and T. Cyr, "Paramagnetic resonance of Er and Dy in ScAl2", J. Phys. F5 1407 (1975)

  32. R. A. B. Devine, J. C. H. Chiu and M. Poirier, "Effect of hydrogen on the  paramagnetic resonance of Mn in Pd", J. Phys. F5 2362 (1975)

  33. A. K. Bose and R. A. B. Devine, "Off-diagonal operator equivalents by the method of commutator calculus", Phys. Lett. 55 267 (1975)

  34. J. C. H. Chiu and R. A. B. Devine, "Optical phonons and density of states variations in Pd-Hx", J. Phys. F6 L33 (1976)

  35. R. A. B. Devine, "Observation of the paramagnetic resonance of Fe in Pd", Sol. State Comms. 19 351 (1976)

  36. J. C. H. Chiu and R. A. B. Devine, "Resistivity determination of the density of states variation in Pd-Ag alloys", Can. J. Phys. 55 1218 (1977)

  37. J. C. H. Chiu and R. A. B. Devine, "Resistivity evidence for the correlation  between superconductivity and optical phonons in Pd-H", Sol. State Comms. 22 631 (1977)

  38. R. A. B. Devine, "A resonance study of the paramagnetic behavior of Fe in Pd", J. Phys. F7 1097 (1977)

  39. E. P. Chock, R. A. B. Devine S. A. Dodds, R. Orbach and L. Tippie, "Paramagnetic resonance of Gd in Laves phase di-aluminide compounds", J. Phys. F7 1097 (1977)

  40. R. A. B. Devine and Y. Berthier, "A comment on the hyperfine field in ferromagnetic alloys", J. Phys. F7 L53 (1977)

  41. R. A. B. Devine and D. K. Ray, "Influence of magnetic order on the crystal field in cubic alloys", Sol. State Comms. 21 941 (1977)

  42. Y. Berthier, R. A. B. Devine and B. Barbara, "Hyperfine fields in ordered Dy1-xMxAl2 (M = Y, Gd) compounds", Phys. Rev. B16 1025 (1977)

  43. Y. Berthier, R. A. B. Devine and E. Belorizky, "Conduction electron spin  and orbital polarisation effects in rare-earth-Al2 compounds", Phys. Rev. B17 4137 (1978)

  44. Y. Berthier, R. A. B. Devine, P. Morin and J. Pierre, "Hyperfine field in cubic RE-Al2 and RE-Zn ordered compounds", in "Rare-Earths and Actinides", Inst. Phys. Conf. Ser. N° 37 (Inst. of Phys., London, 1978) p 51

  45. R. A. B. Devine, "Pressure dependence of the crystal field in Pr singlet groundstate systems", Phys. Rev. B18 5877 (1978)

  46. B. Cornu, J. L. Genicon and R. A. B. Devine, "Hydrostatic pressure dependence of the susceptibility in PrS", Phys. Rev. B17 4474 (1978)

  47. R. A. B. Devine, "Influence of charge transfer on the crystal field in rare-earth chalcogenides and pnictides", J. Phys. F9 2107 (1979)

  48. R. A. B. Devine and Y. Berthier, "Variation of <r4> and <r6> across the rare- earth series", Sol. State Comms. 26 315 (1978)

  49. Y. Berthier and R. A. B. Devine, "Nuclear magnetic resonance of La139 in ferromagnetic Gd0.9La0.1Al2", J. Phys. F8 L113 (1978)

  50. Y. Berthier, R. A. B. Devine, B. Barbara and M. F. Rossignol, "On the mechanism of magnetic coupling in rare-earth Zn and rare-earth Al2 compounds", Phys. Rev. B18 1504 (1977)

  51. Y. Berthier and R. A. B. Devine, "Microscopic and macroscopic effect of substitution of Dy in DyAl2 by trivalent rare-earth ions", J. Physique 40 Suppl. C5 116 (1979)

  52. E. Belorizky, Y. Berthier, R. A. B. Devine, P. M. Levy and J. J. Niez, "Determination through symmetry arguments of the various contributions to the self-polarisation field at rare-earth nuclei in cubic compounds", J. Physique 40 Suppl. C5 56 (1979)

  53. Y. Berthier and R. A. B. Devine, "Evidence for easy axis rotation in Dy1-x
    GdxAl2 alloys from nuclear hyperfine field measurements", J. Appl. Phys. 50 2321 (1978)

  54. Y. Berthier and R. A. B. Devine, "Anomalous concentration dependence 
    of the hyperfine field in ordered Dy1-xGdxAl2 compounds", Phys. Rev. B21 3844 (1980)

  55. R. A. B. Devine and Y. Berthier, "Indirect evidence for exchange modification of the conduction bands in REAl2 compounds", Phys. Rev. B19 5939 (1979)

  56. Y. Berthier and R. A. B. Devine, "Nuclear hyperfine fields in ferromagnetic Er1-xGdxAl2 compounds", J. Appl. Phys. 50 7504 (1979)

  57. I. A. Privorotskii, R. A. B. Devine and G. C. Alexandrakis, "Generation and attenuation of phonons at ferromagnetic resonance in thick Ni films", J. Appl. Phys. 50 7732 (1979)

  58. Y. Berthier and R. A. B. Devine, "Effective molecular field at some rare-
    earth ions in ordered intermetallic compounds RE1-xGdxAl2", J. Mag. Mag. Mat. 15-18 703 (1980)

  59. R. A. B. Devine, "Pressure effects on the crystal field in rare-earth 
    chalcogenides and pnictides", in "Crystalline electric fields and 
    structural effects in f-electron systems" eds. J. E. Crow, R. P. Guertin
    and E. W. Mihalisin, (Plenum, New York 1980) p 165

  60. B. Barbara, M. F. Rossignol, R. A. B. Devine, Y. Berthier and A. P. Murani, 
    "REAl2's; a real and yet unsolved problem", in "Crystalline electric fields
    and structural effects in f-electron systems" eds J. E. Crow, R. P. Guertin
    and E. W. Mihalisin, (Plenum, New York 1980) p 481

  61. Y. Berthier, R. A. B. Devine and R. A. Butera, "Nuclear magnetic resonance at rare-earth nuclei in RE-Fe2 intermetallic compounds", in "Nuclear and electron resonance spectroscopies applied to materials science" eds E. N. Kaufmann and G. K. Shenoy, (Elsevier North Holland 1981) p 449

  62. Y. Berthier and R. A. B. Devine, "NMR study of the exchange interactions and conduction electron polarisation in ErFe2", J. Appl. Phys. 52 2071 (1981)

  63. R. A. B. Devine and Y. Berthier, "4f moment determination from NMR in RE intermetallics", J. Mag. Mag. Mat. 25 135 (1981)

  64. G. C. Alexandrakis and R. A. B. Devine, "Observation of phonon modes in nickel at microwave frequencies", Sol. State Comms. 38 405 (1981)

  65. R. A. B. Devine and Y. Berthier, "Experimental determination of the 
    electrostatic contribution to the CEF in non-cubic metals" in "Crystalline
    electric field effects in f electron systems" eds. R. P. Guertin, W. Suski
    and Z. Zolnierek, (Plenum New York 1982) p 461

  66. G. C. Alexandrakis, R. A. B. Devine and J. Abeles, "High frequency sound
    as a probe of exchange energy in nickel", J. Appl. Phys. 53 2095 (1982)

  67. R. A. B. Devine, "Pressure dependence of the hyperfine field in Eu inter-
    metallics", Phys. Rev. B25 7052 (1982)

  68. G. C. Alexandrakis, R. A. B. Devine and J. H. Abeles, "Resonant and non-
    resonant sound excitation and transmission in nickel crystals at 9.37 GHz", Sol. State Comms. 41 781 (1982)

  69. B. Barbara, Y. Berthier, R. A. B. Devine and M. F. Rossignol, "Neutron 
    spectroscopy of rare-earths in LaAl2", J. Phys. F12 2625 (1982)

  70. R. A. B. Devine, S. Vaughan and L. P. Clarke, "Comparison of non- invasive flow measurements by two NMR methods", in "Nuclear 
    medicine and biology" ed. C. Reynaud, (Pergamon New York 1982) Vol. 2 p 1499

  71. R. A. B. Devine, L. P. Clarke, S. Vaughan and A. N. Serafini, "Theoretical 
    and experimental analysis of the single coil pulsed NMR method for
    measuring fluid flow", J. Nucl. Med. 23 1020 (1982

  72. R. A. B. Devine, L. P. Clarke, S. Vaughan and A. N. Serafini, "Theoretical
    analysis of the two coil method for measuring fluid flow using nuclear
    magnetic resonance", Med. Phys. 9 668 (1982)

  73. R. A. B. Devine, "On the spin-orbit scattering of conduction electrons in 
    dilute non-magnetic alloys", J. Physique 44 393 (1983)

  74. R. A. B. Devine, F. Ferrieu and A. Golanski, "A study of Ar implantation 
    induced defects in SiO2", Nucl. Inst. Meth. 209-210 1201 (1983)

  75. R. A. B. Devine and A. Golanski, "Creation and annealing kinetics of 
    magnetic oxygen vacancy centers in SiO2", J. Appl. Phys. 54 3833
    (1983)

  76. R. A. B. Devine and M. H. Debroux, "E1 defect profiles in Ar implanted 
    SiO2", J. Appl. Phys. 54 4197 (1983)

  77. R. A. B. Devine and A. Golanski, "Dynamics of defect creation by ion 
    implantation in thermal SiO2", J. Appl. Phys. 55 2738 (1984)

  78. R. A. B. Devine, "Isothermal annealing of E1 defects in ion implanted
    SiO2", Nucl. Inst. Meth. B1 378 (1984)

  79. R. A. B. Devine, "Oxygen vacancy creation in SiO2 through ionisation 
    energy deposition", Appl. Phys. Lett. 43 1058 (1983)

  80. R. A. B. Devine, "Mechanism of damage recovery in ion implanted
    SiO2", J. Appl. Phys. 56 563 (1984)

  81. C. Fiori and R. A. B. Devine, "Photon induced oxygen desorption in 
    thin a-SiO2", Phys. Rev. Letts. 52 2081 (1984)

  82. R. A. B. Devine, "Oxygen vacancy annealing in H+ implanted SiO2",
    J. Appl. Phys. 56 953 (1984)

  83. C. Fiori and R. A. B. Devine, "On the initial phase of native oxide
    formation on Si <111>", Sol. State Comms. 51 441 (1984)

  84. E. Belorizky, Y. Berthier and R. A. B. Devine, "Determination of the 4f shell magnetic moment in cubic rare-earth intermetallic compounds",
    J. Mag. Mag. Mat. 44 313 (1984)

  85. R. A. B. Devine and C. Fiori, "u.v. irradiation induced defect modification
    in implanted SiO2", in "Induced defects in insulators" ed. P. Mazzoldi
    (Les Editions de Physique, Les Ulis 1984) p 249

  86. R. A. B. Devine, "Activation energy for damage recovery in ion implanted SiO2", in "Induced defects in insulators" ed P. Mazzoldi, 
    (Les Editions de Physique, Les Ulis 1984) p 241

  87. C. Fiori and R. A. B. Devine, "u.v. and electron induced oxygen vacancy
    creation in amorphous and crystalline SiO2", in "Induced defects in insulators", ed P. Mazzoldi, (Les Editions de Physique, Les Ulis 1984)
    p 93

  88. A. Golanski, R. A. B. Devine and J-C. Oberlin, "Irreversible and reversible annealing of paramagnetic oxygen vacancy (E1) centers in oxygen implanted SiO2", J. Appl. Phys. 56 1572 (1984)

  89. R. A. B. Devine and C. Fiori, "Influence of ionizing radiation on pre-
    damaged amorphous SiO2", J. Appl. Phys. 57 5162 (1985)

  90. C. Fiori and R. A. B. Devine, "Croissance et recuit des couches d'oxyde de silicium sous irradiation laser u.v.", Le Vide et Les Couches Minces 40 325 (1985)

  91. C. Fiori, R. A. B. Devine and P. Meilland, "Photoinduced fixed oxide charge modification in SiO2 films", J. Appl. Phys. 58 1058 (1985)

  92. R. A. B. Devine, "The role of activation energy distributions in diffusion related annealing in SiO2", J. Appl. Phys. 58 716 (1985)

  93. C. Fiori and R. A. B. Devine, "Photoablation in amorphous dielectric films", in "Energy beam-solid interactions and transient thermal processing" eds. V. T. Nguyen and A. C. Cullis (Les Editions de Physique, Les Ulis 1985) Vol. VI p 169

  94. C. Fiori and R. A. B. Devine, "High resolution photoablation in SiOx films" Appl. Phys. Lett. 47 361 (1985)

  95. R. A. B. Devine and C. Fiori, "Thermally activated peroxy radical dissociation and annealing in vitreous SiO2", J. Appl. Phys. 58 3368 (1985)

  96. R. A. B. Devine, C. Fiori and J. Robertson, "The influence of irradiation temperature on u.v. induced defect creation in dry silica", Mat. Res. Soc. Symp. Proc. 61 177 (1986)

  97. R. A. B. Devine and C. Fiori, "Defect creation and photoablation in stoichiometric and sub-stoichiometric SiO2", Mat. Res. Soc. Symp. Proc. 
    60 303 (1986)

  98. C. Fiori and R. A. B. Devine, "Ultraviolet irradiation induced compaction and photoetching in amorphous, thermal SiO2", Mat. Res. Soc. Symp. 61 187 (1986)

  99. R. A. B. Devine and C. Fiori, "Defect enhanced ultraviolet etching of amorphous insulators", Rad. Eff. 99 191 (1986)

  100. C. Fiori and R. A. B. Devine, "Evidence for a wide continuum of polymorphs in a-SiO2", Phys. Rev. B33 2972 (1986)

  101. R. A. B. Devine, "Micropores and the role of ring structures at the Si-SiO2 interface", J. Appl. Phys. 60 468 (1986)

  102. R. A. B. Devine, J. J. Capponi and J. Arndt, "Oxygen diffusion kinetics in densified, amorphous SiO2", Phys. Rev. B35 770 (1987)

  103. R. A. B. Devine and G. Auvert, "Photoinduced oxidation of amorphous SiOx", Appl. Phys. Lett. 49 1605 (1986)

  104. R. A. B. Dupree, R. Dupree, I. Farnan and J. J. Capponi, "Pressure induced bond angle variation in amorphous SiO2", Phys. Rev. B35 2560 (1987)

  105. R. A. B. Devine, "Radiation induced sensitivity enhancement and annealing variation in densified, amorphous SiO2", Phys. Rev. B35 9783 (1987)

  106. R. A. B. Devine and J. Arndt, "Si-O bondlength modification in pressure densified, amorphous SiO2", Phys. Rev. B35 9376 (1987)

  107. R. A. B. Devine and J. Arndt, "Influence of disorder on the Si2p XPS lineshape at the Si-SiO2 interface", in "The physics and technology of amorphous SiO2" ed. R. A. B. Devine, (Plenum, New York 1988) p 273

  108. R. A. B. Devine, A. Grouillet and J-Y. Berlivet, "Temperature dependence of radiation induced defect creation in amorphous SiO2", Nucl. Inst. Meth. in Phys. Res. B32 307 (1988)

  109. R. A. B. Devine, "Comparative radiation sensitivity study of bulk, amorphous SiO2 and MOS structures", J. Non-Cryst. Solids 107 41 (1988)

  110. R. A. B. Devine, "Ion implantation and ionizing radiation effects in thermal oxides", in "The physics and chemistry of SiO2 and the Si-SiO2 interface", eds. B. E. Deal and C. R. Helms (Plenum, New York 1988) p 519

  111. R. A. B. Devine, "Densification induced infra-red and Raman spectra variations in amorphous SiO2", J. Vac. Sci. Tech. A6 3154 (1988)

  112. R. A. B. Devine, "Defect creation and two-photon absorption in SiO2", Phys. Rev. Letts. 62 340 (1988)

  113. R. A. B. Devine and J. Arndt, "Correlated defect creation and dose dependent radiation sensitivity in amorphous SiO2", Phys. Rev. B39 5132 (1989)

  114. R. A. B. Devine, "Radiation damage and the role of structure in amorphous SiO2", Nucl. Inst. Meth. in Phys. Res. B46 244 (1990)

  115. R. A. B. Devine, "On the physical models for annealing of radiation induced defects in amorphous SiO2", Nucl. Inst. Meth. in Phys. Res. B46 261 (1990)

  116. R. A. B. Devine, "Electrical and spin resonance characteristics of low temperature plasma enhanced chemical vapour deposited SiO2", J. Appl. Phys. 66 4702 (1989)

  117. F. Ferrieu and R. A. B. Devine, "Densification and porosity in low temperature deposited oxide", J. Non-Cryst. Solids 113 100 (1989)

  118. R. A. B. Devine and K. Hubner, "Radiation induced defects in dense phases of crystalline and amorphous SiO2", Phys. Rev. B40 7281 (1989)

  119. R. A. B. Devine and J-M. Francou, "uv induced defect creation and annihilation in low temperature deposited oxide", J. Appl. Phys. 66 5654 (1989)

  120. R. A. B. Devine and R. L. Pfeffer, "Evidence for strongly enhanced paramagnetic defect creation in low temperature PECVD SiO2 films", Mat. Res. Soc. Symp. Proc. 165 119 (1989)

  121. R. L. Pfeffer, G. J. Gerardi, R. A. Lux, K.A. Jones, E. H. Poindexter, W. H. Chang and R. A. B. Devine, “Low temperature PECVD Si3N4 films for GaAs encapsulation and passivation”, Mat. Res. Soc. Symp. Proc. 165 
    227 (1989)

  122. R. A. B. Devine and J-M. Francou, “Extrinsic and intrinsic defect creation in amorphous SiO2”, Phys. Rev. B41 12882 (1990)

  123. R. A. B. Devine, J-M. Francou, A. Inard and J. Pelletier, “Ultraviolet induced defect creation in O2 plasma exposed a-SiO2”, Appl. Phys. Lett. 56 1549 (1990)

  124. R. A. B. Devine and J. Arndt, “Defect pair creation through ultraviolet radiation in dense, amorphous SiO2”, Phys. Rev. B42 2617 (1990)

  125. R. A. B. Devine, “On the structure of low temperature PECVD silicon dioxide films”, J. Electron. Mat. 19 1299 (1990)

  126. R. A. B. Devine, “Influence of temperature on defect creation during plasma exposure of SiO2”, Appl. Phys. Lett. 57 2564 (1990)

  127. J. Arndt, R. A. B. Devine and A. G. Revesz, “Anomalous behaviour of the refractive index during the annealing of densified, amorphous SiO2”, J. Non- Cryst. Solids 131-133 1206 (1991)

  128. A. Stesmans, R. A. B. Devine, A. G. Revesz and H. L. Hughes, “Irradiation induced ESR active defects in SIMOX structures”, IEEE Trans. Nucl. Sci. NS37 2008 (1990)

  129. R. A. B. Devine and A. Tissier, “Defects in tetraethoxysilane - oxygen plasma deposited SiO2”, J. Appl. Phys. 69 2480 (1991)

  130. O. Joubert, G. Hollinger, C. Fiori, R. A. B. Devine, P. Paniez and R. Pantel, “Ultraviolet induced transformation of polysiloxane films”, J. Appl. Phys. 69 6647 (1991)

  131. L. Douillard, F. Jollet, J-P. Duraud, E. Dooryhee and R. A. B. Devine, “Si-O- Si bonding in plasma enhanced chemical vapour deposited SiO2 films”, Trans. Mat. Res. Soc. Jap. 8 242 (1992)

  132. R. A. B. Devine, “Structure and defects in deposited, amorphous SiO2”, . Trans. Mat. Res. Soc. Jap. 8 165 (1992)

  133. J-L. Leray, J. Margail and R. A. B. Devine, “Electric field dependent paramagnetic defect creation in single step implanted SIMOX films”, Mat. Sci. and Eng. B12 153 (1992)

  134. R. A. B. Devine, “Defect reactivation and structural relaxation in deposited, amorphous SiO2”, J. Appl. Phys. 70 3542 (1991)

  135. R. A. B. Devine, J-L. Leray and J. Margail, “Ultraviolet radiation induced defect creation in buried SiO2 layers”, Appl. Phys. Lett. 59 2275 (1991)

  136. L. Douillard, F. Jollet, J-P. Duraud, R. A. B. Devine and E. Dooryhee, “Radiation damage produced in quartz by energetic ions”, Rad. Eff. and 
    Defects in Solids 124 351 (1992)

  137. C. Debauche, C. Licoppe, J. Flicstein, O. Dulac and R. A. B. Devine, “uv induced removal of hydrogen bonds in silica films deposited at low temperatures”, Appl. Phys. Lett. 61 306 (1992)

  138. D. Hervé, J-L. Leray and R. A. B. Devine, “Comparitive study of radiation induced electrical and spin active defects in buried SiO2 layers”, J. Appl. Phys. 72 3634 (1992)

  139. R. A. B. Devine, “Ion implantation and radiation induced structural modifications in amorphous SiO2”, J. Non-Cryst. Solids 152 50 (1993)

  140. R. A. B. Devine, "Radiation induced structural changes in amorphous SiO2. I. Point defects" Jap. J. Appl. Phys. 31 4411 (1993)

  141. L. Douillard, E. Dooryhee, J-P. Duraud, F. Jollet and R. A. B. Devine, "Modifications of the atomic and electronic structure of quartz by high energy radiation" Rad. Eff. and Defects in Solids 126 237 ((1993)

  142. O. Joubert, R. Burke, L. Vallier, C. Martinet and R. A. B. Devine, "Influence of ion energy on the physical properties of plasma deposited 
    SiO2 films" Appl. Phys. Lett. 62 228 (1993)

  143. C. Debauche, C. Licoppe, J. Flicstein and R. A. B. Devine, "Paramagnetic defect analysis in uv lamp induced chemical vapour deposited a-SiO2 films" Proc. Symp. Mat. Res. Soc. 284 307 (1993)

  144. C. Debauche, C. Licoppe, J. Flicstein, F. Huet and R. A. B. Devine, "Evidence for low temperature uv annealing of UVCVD, PECVD and SOG based SiO2 films" Proc. Symp. Mat. Res. Soc. 284 313 (1993)

  145. L. Vallier, R. Burke, O. Joubert, F. Ferrieu and R. A. B. Devine, "Influence of ion energy in plasma deposition of a-SiO2 films" Proc. Symp. Mat. Res. Soc. 284 193 (1993)

  146. D. Hervé, R. A. B. Devine and J-L. Leray, "Investigation concerning paramagnetic defect generation and charge trapping in SiO2 thin films and thermal annealing after irradiation" Le Vide et les Couches Minces 260 (suppl.) 335 (1992)

  147. W. L. Warren, D. M. Fleetwood, M. R. Shanneyfelt, J. R. Schwank, P. S. Winokur and R. A. B. Devine, "Excess Si-related defect centers in buried SiO2 thin films" Appl. Phys. Lett. 62 3330 (1993)

  148. C. Debauche, C. Licoppe, P. Ossart, R. A. B. Devine and F. Rochet, "Influence of deposition pressure on nitrogen incorporation in UVCVD SiO2 films", J. Appl. Phys. 74 5672 (1993)

  149. R. A. B. Devine and M. Marchand, "Evidence for structural similarities between chemical vapour deposited and neutron irradiated SiO2", Appl. Phys. Lett. 63 619 (1993)

  150. R. A. B. Devine, D. Mathiot, W. L. Warren, D. M. Fleetwood and B. Aspar, "Point defect generation and oxide degradation durring annealing of Si/SiO2 interfaces" Appl. Phys. Lett. 63 2926 (1993)

  151. P. Paillet, D. Hervé, J-L. Leray and R. A. B. Devine, "Effect of high temperature processing of Si/SiO2/Si structures on their response to X irradiation", Appl. Phys. Lett. 63 2088 (1993)

  152. W. L. Warren, D. M. Fleetwood, J. R. Schwank, M. R. Shaneyfelt, P. S. Winokur, R. A. B. Devine, W. P. Maszara and J. B. McKitterick, "Shallow oxygen-related donors in bonded and etchback silicon on insulator structures" Appl. Phys. Lett. 64 508 (1994)

  153. F. Templier, L. Vallier, R. Madar, J-C. Oberlin and R. A. B. Devine, "Milli- torr range PECVD of a-SiO2 films using Si(OC2H5)4 and O2" Thin Solid Films 241 251 (1994)

  154. R. A. B. Devine, W. L. Warren, M. R. Shaneyfelt, D. M. .Fleetwood and B. Aspar, "Oxide modification due to high temperature processing of Si/SiO2/Si structures" Nucl. Inst. Meth. B84 254 (1994)

  155. W. L. Warren, M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood,P. S. Winokur, R. A. B. Devine, W. P. Maszara and J. B. McKitterick, "Paramagnetic defect centers in BESOI and SIMOX buried oxides", IEEE Trans. Nucl. Sci. NS 40 1755 (1993)

  156. R. A. B. Devine, "Macroscopic and microscopic effects of radiation in amorphous SiO2" Nucl. Inst. Meth. in Phys. Res. B91 378 (1994)

  157. R. A. B. Devine, D. Mathiot, W. L. Warren and D. M. Fleetwood, "Near interface oxide degradation in high temperature annealed Si/SiO2/Si structures" Proc. Symp. Mat. Res. Soc. 318 (1994)

  158. W. L. Warren, D. M. Fleetwood, M. R. Shaneyfelt, J. R. Schwank, P. S. Winokur, R. A. B. Devine and D. Mathiot, "Links between oxide traps, interface traps and border traps in high temperature annealed Si/SiO2 systems". Appl. Phys. Lett. 64 3452 (1994)

  159. R. A. B. Devine, "The structure of SiO2, its defects and radiation hardness" IEEE Trans. Nucl. Sci. NS 41 452 (1994)

  160. P. Paillet, D. Herve, J-L. Leray and R. A. B. Devine, "Evidence of negative charge trapping in high temperature annealed thermal oxide", IEEE Trans. Nucl. Sci. NS 41 473 (1994)

  161. W. L. Warren, D. M. Fleetwood, M. R. Shaneyfelt, R. A. B. Devine, D. Mathiot, I. H. Wilson and J. B. Xu, "Degradation and reliability issues in high temperature annealed Si/SiO2/Si structures", Proc. Symp. Mat. Res. Soc. 338 3 (1994) 

  162. D. M. Fleetwood, W. L. Warren, M. R. Shaneyfelt, R. A. B. Devine and J. H. Scofield, "Enhanced MOS 1/f noise due to near interfacial oxygen deficiency", J. Non-Cryst. Solids 187 199 (1995)

  163. W. L. Warren, D. M. Fleetwood, M. R. Shaneyfelt, P. S. Winokur and R. A. B. Devine, "Defect transformation and the density of border traps in SiO2 films", Phys. Rev. B50 14710 (1994)

  164. R. A. B. Devine, W. L. Warren, J. B. Xu, I. H. Wilson, P. Paillet and J-L. Leray, "Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures", J. Appl. Phys. 77 175 (1995)

  165. C. Martinet and R. A. B. Devine, "Comparison of experimental and calculated TO and LO oxygen vibrational modes in thin SiO2 films", J. 
    Non-Cryst. Solids 187 96 (1995)

  166. D. Laviale, J-C. Oberlin and R. A. B. Devine, "Low pressure microwave ECR plasma deposition of amorphous Ta2O5 films", Appl. Phys. Lett. 65 2021 (1994)

  167. W. L. Warren, M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, P. S. Winokur and R. A. B. Devine, "Microscopic nature of border traps in MOS oxides", IEEE Trans. Nuclear Sci. NS 41 1817 (1994)

  168. C. Martinet and R. A. B. Devine, "Analysis of the vibrational mode spectra of amorphous SiO2 films" J. Appl. Phys. 77 4343 (1995)

  169. E. G. Parada, P. Gonzalez, B. Leon, M. Perez-Amor, J. Flicstein and R. A. B. Devine, "Improvement of silicon oxide film properties by ultra-violet excimer lamp annealing" Appl. Surf. Sci. 86 294 (1995) 

  170. R. A. B. Devine, D. Mathiot, W. L. Warren and B. Aspar, "O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures" J. Appl. Phys. 79 2302 (1996)

  171. R. A. B. Devine, D. Mathiot, W. L. Warren and M. Rohr, "Mechanism for enhanced interfacial degradation in annealed SiO2/Si based devices" Micr. Engineering 28 341 (1995)

  172. R. A. B. Devine, D. Mathiot, W. L. Warren, P. Paillet and J-L. Leray, "Processing induced degradation in Si/SiO2 systems" Proc. CSC 2 (Suppl.) Le Vide: science, tech. et appl. 275 412 (1995)

  173. J-L. Autran, P. Paillet, J-L. Leray and R. A. B. Devine, "Conduction mechanisms and space charge effects in typical thin film insulators (SiO2, Ta2O5, PbZrTiO3) Proc. CSC 2 (Suppl.) Le Vide : science, tech. et appl. 275 44 (1995)

  174. C. Martinet and R. A. B. Devine, "Low temperature Si oxidation kinetics in microwave ECR plasmas" Proc. CIP 95 (Suppl.) Le Vide: science, tech. et appl. 275 276 (1995)

  175. C. Martinet and R. A. B. Devine, "Infra-red evidence for inhomogeneity in SiO2 films grown by plasma assisted oxidation of Si" Appl. Phys. Lett. 67 2696 (1995)

  176. C. Martinet and R. A. B. Devine, "Low temperature oxidation of Si in a microwave electron cyclotron resonance excited O2 plasma" Appl. Phys. Lett. 67 3500 (1995)

  177. R. A. B. Devine, D.Mathiot, J-B. Xu, I. H. Wilson, M. Gauneau and W. L. Warren, "Grain boundary enhanced oxygen out-diffusion in annealed polycrystalline Si/SiO2/crystalline Si structures" Thin Sol. Films 286 317 (1996)

  178.  R. A. B. Devine, L. Vallier, J-L. Autran, P. Paillet and J-L. Leray, "Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapour deposition using a TaF5 source", Appl. Phys. Lett. 68 1775 (1996)

  179. K. Vanheusden, W. L. Warren, J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, P. S. Winokur and R. A. B. Devine, "Non-uniform charge and paramagnetic interface traps in high-temperature annealed Si/SiO2/Si structures", Appl. Phys. Lett. 68 2117 (1996)

  180. J-L. Autran, P. Paillet, J-L. Leray and R. A. B. Devine, "Conduction properties of amorphous Ta2O5 films prepared by plasma enhanced chemical vapour deposition", Sensors and Actuators A 51 5 (1995)

  181. I. H. Wilson, J-B. Xu, R. A. B. Devine and R. P. Webb, "Energetic ion impacts on quartz surfaces: a study by atomic force microscopy and computer simulation" Nucl. Inst. Meth. in Phys. Res. B 118 473 (1996)

  182. M. Martini, F. Meinardi, E. Rosetta, G. Spinolo, A. Vedda, J-L. Leray, P. Paillet, J-L. Autran and R. A. B. Devine, "Irradiation induced thermally stimulated luminescence and conductivity in MOS oxides (SIMOX and thermal). IEEE Trans. Nucl. Sci. NS 43 845 (1996)

  183. O. Flament, J-L. Leray, F. Martin, E. Orsier, J. L. Pelloie, R. Truche and R. A. B. Devine, "Effect of rapid thermal annealing on radiation hardening of MOS devices", IEEE Trans. Nucl. Sci. NS (in press, 1996)

  184. R. A. B. Devine, D. Mathiot and W. L. Warren, "Oxygen exchange at the Si/SiO2 interface and defect creation associated with high temperature process steps", in "The Physics and Chemistry of SiO2 and the Si/SiO2 Interface III. "eds H. Z. Massoud, E. H. Pointdexter and C. R. Helms (Electrochemical Society, New Jersey 1996) p 265

  185. C. Martinet and R. A. B. Devine, "Silicon oxidation kinetics in microwave excited, low pressure O2 plasmas", in "The Physics and Chemistry of SiO2 and the Si/SiO2 Interface III. "eds H. Z. Massoud, E. H. Pointdexter and C. R. Helms (Electrochemical Society, New Jersey 1996) p 304

  186. R. A. B. Devine, "Non-destructive measurement of interfacial SiO2 films formed during deposition and annealing of Ta2O5", Appl. Phys. Lett. 68 1924 (1996)

  187. R. A. B. Devine, "Structural nature of the Si/SiO2 interface through infra-red spectroscopy", Appl. Phys. Lett. 68 3108 (1996)

  188. W. L. Warren, K. Vanheusden, J. R. Schwank, D. M. Fleetwood, P. S. Winokur and R. A. B. Devine, "Mechanism for anneal induced interfacial charging in SiO2 thin films on Si", Appl. Phys. Lett. 68 2993 (1996)

  189. R. A. B. Devine, "SiO2 interfacial degradation and the role of oxygen interstitials" J. de Phys. III 6 1569 (1996)

  190. W. L. Warren, K. Vanheusden, J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, P. S. Winokur and R. A. B. Devine, "Over-coordinated oxygen centers in SIMOX and thermal oxides" IEEE Trans. Nucl. Sci. NS 33 2617 (1996)

  191. K. Vanheusden, W. L. Warren, D. M. Fleetwood, J. R. Schwank, P. S. Winokur and R. A. B. Devine, "Novel memory device based on proton drift in SiO2 thin films" Nature 386 587 (1997)

  192. K. Vanheusden, W. L. Warren and R. A. B. Devine, "H+ and D+ associated charge buildup during the annealing of Si/SiO2/Si structures" J. Non-Cryst. Solids 216 116 (1997)

  193. R. A. B. Devine, W. L. Warren, K. Vanheusden, C. Mourain and M-J. Bouzid, "Electron induced depassivation of H and D terminated Si/SiO2 interfaces", Proc. Symp. Mat. Res. Soc. 445 27 (1997)

  194. V. Girault, H. Plantier, R. A. B. Devine and F. Templier, "Low temperature , plasma assisted oxidation of amorphous Si", J. Non-Cryst. Solids 216 55 (1997)

  195. C. Martinet, R. A. B. Devine and M. Brunel, "Oxidation of crystalline Si in an O2 plasma: growth kinetics and oxide characterisation" J. Appl. Phys.81 6996 (1997)

  196. K. Vanheusden, S. P. Karna, R. D. Pugh, W. L. Warren, D. M. Fleetwood, R. A. B. Devine and A. H. Edwards, "Thermally activated electron capture by mobile protons in SiO2 thin films", Appl. Phys. Letts. 72 28 (1998)

  197. J-L. Autran, R. A. B. Devine, C. Chaneliere and B. Balland, "Fabrication and characterisation of Si-MOSFETs with amorphous Ta2O5 gate insulator obtained using PECVD from a TaF5 source", IEEE Electron. Dev. Lett. (in press, 1997)

  198. R. A. B. Devine, J. L. Autran, W. L. Warren, K. L. Vanheusden and J. C. Rostaing, 
    "Interfacial hardness enhancement in deuterium annealed 0.25 mm channel metal oxide semiconductor transistors" Appl. Phys. Lett.70 2999 (1997)

  199. R. A. B. Devine, C. Chaneliere, J-L. Autran, B. Balland, P. Paillet and J-L. Leray, "Use of carbon free Ta2O5 thin films as a gate insulator" Microelectron. Eng. 36 61 (1997)

  200. W. L. Warren, D. M. Fleetwood, J. R. Schwank, B. L. Draper, P. S. Winokur, M. J. Knoll, K. Vanheusden, R. A. B. Devine, L. B. Archer and R. M. Wallace "Nonvolatile field effect transistors based on protons and Si/SiO2/Si structures" IEEE Trans. Nucl. Sci. 44 1789 (1997)

  201. K. Vanheusden, J. R. Schwank, W. L. Warren, D. M. Fleetwood and R. A. B. Devine, "Radiation induced H+ trapping in buried SiO2", Microelectron. Eng.36 241 (1997

  202. I. H. Wilson, Y. J. Shen, J. B. Xu, R. A. B. Devine and C. Jeynes, "Ion impacts and Nanostructures on Ge (111), In0.22Ga0.78As/GaAs (100) and alpha quartz surfaces observed by atomic force microscopy" Surf. and Interface Anal. 24 881 (1996)

  203. K. Vanheusden, W. L. Warren, R. A. B. Devine, D. M. Fleetwood, J. R. Schwank, P. S. Winokur and Z. J. Lemnios, “Direct observation of mobile protons in SiO2 thin films: potential applications in a novel memory device“ Proc. Symp. Mat. Res. Soc. 445 187 (1997)

  204. A. M. Ferreira, S. P. Karna, C. P. Brothers, R. D. Pugh, B. B. K. Singaraju, K. Vanheusden, W. L. Warren and R. A. B. Devine, “A quantum mechanical investigation of positively charged defects in SiO2 thin film devices“ Proc. Symp. Mat. Res. Soc. 446 247 (1997)

  205. K. Vanheusden, R. A. B. Devine, J. R. Schwank, D. M. Fleetwood, R. G. Polcawich, W. L. Warren, S. P. Karna and R. D. Pugh, “Irradiation response of
    mobile in buried SiO2 films“ IEEE Trans. Nucl. Sci. 44 2087 (1997)

  206. M. Martini, F. Meinardi, E. Rosetta, G. Spinolo, A. Vedda, J-L. Leray, P. Paillet, J-L. Autran and R. A. B. Devine, “Radiation induced trap levels in SIMOX oxides: low temperature thermally stimulated luminescence “ IEEE Trans. Nucl. Sci. 45 1396 (1998)

  207. R. A. B. Devine, W. L. Warren and S. P. Karna, “Comment on"A model of hole trapping in SiO2 films on silicon" J. Appl. Phys. 83 5591 (1998)

  208. M. Seck, R. A. B. Devine, C. Hernandez, Y. Campidelli and J. C. Dupuy, "Study of Ge bonding and distribution in plasma oxides of Si1-xGex alloys" Appl. Phys. Lett. 72 2748 (1998)

  209. C. Chaneliere, S. Four, J. L. Autran, R. A. B. Devine and N. P. Sandler, “Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor’’ J. Appl. Phys 83 4823 (1998)

  210. C. Chaneliere, J. L. Autran, R. A . B. Devine and B. Balland, “Tantalum pentoxide
    ( Ta2O5 ) thin films for advanced dielectric applications’’ Materials Science Engineering Reviews R22 269 (1998)

  211. J-L. Autran, R. A. B. Devine, W. L. Warren and K. Vanheusden, “Comparitive hot carrier induced degradation in 0.25 micron MOSFETs with H or D passivated interfaces’’ Proceedings of the 27th European Solid State device Research Conf. Editor H. Grünbacher (Editions Frontieres, Paris 1997) p. 580

  212. J. R. Chavez, S. P. Karna, K. Vanheusden, C. P. Brothers, R. D. Pugh, B. K. Singaraju, W. L. Warren and R. A. B. Devine, "Microscopic structure of the E'* center in amorphous SiO2: A first principles quantum mechanical investigation" IEEE Trans. Nucl. Sci. 44 1799 (1997)

  213. C. Chaneliere, S. Four, J-L. Autran and R. A. B. Devine, "Comparison between the properties of amorphous and crystalline Ta2O5 thin films on Si" Microelect. Engineering. (in press, 1998)

  214. S. Four, R. A. B. Devine and L. Vallier, "Kinetics and characterisation of plasma grown aluminium oxide", J. Appl. Phys. 83 5570 (1998)

  215. K. Vanheusden, W. L. Warren, D. M. Fleetwood, R. A. B. Devine, B. L. Draper, J. R. Schwank, M. R. Shaneyfelt and P. Winokur, "A non-volatile MOSFET memory device based on mobile protons in the gate dielectric", Proc. Symp. Materials Res. Soc. (in press 1998)

  216. K. Vanheusden, W. L. Warren, D. M. Fleetwood, J. R. Schwank, M. R. Shaneyfelt, B. L. Draper, P. S. Winokur, R. A. B. Devine, L. B. Archer and R. M. Wallace, "Chemical kinetics of mobile proton generation and annihilation in SiO2 thin films", Appl. Phys. Lett. 73 674 (1998)

  217. C. Chaneliere, J. L. Autran, S. Four, R. A. B. Devine and B. Balland, "Theoretical and experimental study of the conduction mechanism in Al/Ta2O5/SiO2/Si and Al/Ta2O5/Si3N4/Si structures" J. Non-Crystalline Solids (in press, 1999)

  218. D. M. Fleetwood, W. L. Warren, K. Vanheusden, R. A. B. Devine, M. R. Shaneyfelt, B. L. Draper, J. R. Schwank, T. L. Meisenheimer, P. S. Winokur and M. G. Knoll, "Nonvolatile memory based on mobile protons" IEEE Int. Nonvolatile Memory Tech. Conf. Proc. (IEEE. Comp, Pack. and Man. Tech. Soc) p. 91-4 (1998)

  219. T. Busani, H. Plantier, R. A. B. Devine, C. Hernandez and Y. Campidelli, ‘’Growth kinetics and physical characterisation of Si1-xGexO2 films obtained by plasma assisted oxidation’’ J. Non-Cryst. Solids 254 80 (1999)

  220. T. Busani, H. Plantier, R. A. B. Devine, C. Hernandez and Y. Campidelli, ‘’Growth and characterisation of GeO2 films obtained by plasma anodisation of epitaxial Ge films’’ J. Appl. Phys. 85 4262 (1999)

  221. S. Four, R. A. B. Devine, E. Z. Luo, I. H. Wilson and H. S. Cheng, ‘’Properties of tantalum pentoxide (Ta2O5) obtained by plasma assisted deposition using a TaF5 source’’ J. Non-Cryst. Solids 254 139 (1999)

  222. V. Girault and R. A. B. Devine, ‘’Motion of hydrogen ions in the proton memory’’ J. Non-Cryst. Solids 254 57 (1999)

  223. T. Busani, H. Plantier, R. A. B. Devine, C. Hernandez and Y. Campidelli, "Si1-xGex oxidation by plasma assisted processing: oxide uniformity and electrical properties" Proc. Mat. Res. Soc. Symp. (in press, 1999)

  224. H. Plantier, J. Pelletier, R. A. B. Devine and G. Vincent, "Physical characteristics of very low temperature anodic oxides of polycrystalline Si films", Proc. Mat. Res. Soc. Symp. 558 (in press, 1999)

  225. E. Z. Luo, B. Sundaravel, H. Y. Guo, I. H. Wilson, S. Four and R. A. B. Devine, "Combined RBS, NRA and ERDA studies of tantalum pentoxide films prepared by plasma enhanced chemical vapour deposition using a tantalum pentafluoride source" Nucl. Inst. Meth. in Phys. Res. (submitted, 1999)

  226. C. Chaneliere, S. Four, J. L. Autran and R. A. B. Devine, "Dielectric permittivity of amorphous and hexagonal electron cyclotron resonance plasma deposited Ta2O5 thin films" Electrochem. Sol. State Lett. (in press, 1999)

  227. K. A. Vanheusden, D. M. Fleetwood, W. Warren and R. A. B. Devine, "Reactions and diffusion during annealing induced H+ generation in SOI buried oxides", Proc. INFOS (in press, 1999)

  228. V. Girault, R. A. B. Devine, W. L. Warren and K. Vanheusden, "Physical proof and chemical explanation of proton generation in Si/SiO2/Si structures", Proc. INFOS (in press, 1999)

  229. V. Girault and R. A. B. Devine, ‘’Demonstration of an integrated memory function in protonated field effect transistors ’IEEE Trans. Elec. Dev. (1999 submitted)

  230. C. Chaneliere, J-L. Autran and R. A. B. Devine, ‘’Conduction mechanisms in Ta2O5/SiO2 and Ta2O5/Si3N4 stacked structures on Si’’, J. Appl. Phys. 86 xx (1999)

  231. S. Four, R. A. B. Devine and M. Brunel, ‘’Characterisation of plasma deposited Ta2O5 films using grazing incidence X-ray scattering’’,. (submitted, 1999)

  232. H. A. Kurtz, S. P. Karna and R. A. B. Devine, ‘’Unravelling the nature of proton transport in glass’’, Nature (submitted 1999)

  233. N. F. M. Devine, J. Robertson, V. Girault and R. A. B. Devine, ‘’Dispersive transport of protons in oxides confined in Si/SiO2/Si structures’’ Phys. Rev. B (submitted, 1999)

  234. K. Vanheusden, W. L. Warren, R. A. B. Devine, D. M. Fleetwood, B. L. Draper and J. R. Schwank, ‘’A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films’’, J. Non-Cryst. Solids 254 1 (1999)

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