Center for High Technology Materials
1313 Goddard SE Rm. 105C
Albuquerque NM 87106, USA
Tel: 505 272 7807  Fax: 505 272 7801

 

 

Review papers

  • P. G. Eliseev and Yu. M. Popov, Semiconductor lasers, Quant. Electron., v. 27 (12), 1076-1079 (1997).
  • P. G. Eliseev, Optical strength of semiconductor laser materials, Progr. Quant. Electron., 20 (1), 1-82 (1996).
  • P. G. Eliseev, Long wavelength (l > 2 mm) semiconductor lasers,
    Semiconductor Lasers II. Materials and Structures, Ed. E. Kapon, Acad. Press, San Diego, 1999; Chapter II, pp. 71-155 (1999).
  • P. G. Eliseev, Radiative processes in InGaN quantum wells (Invited),
    7th Int. Symp. "Nanostructures: Physics and Technology", S. Petersburg, Russia, June 14-18 (1999).

II. InGaAs strained-layer quantum wells.

  • P. G. Eliseev and A. E. Drakin, The negative differential gain in strained-layer InGaAs QW lasers, Proc. SPIE, 2399, 302-306 (1995).
  • P. G. Eliseev, G. Beister et al., Power hysteresis and waveguide bistability in stripe quantum-well heterolasers on the base of InGaAs/GaAs/GaAlAs with strained active layer, Quant. Electron., 25 (4) 291-301 (1995).
  • I. V. Akimova and P. G. Eliseev, Emission of strained-layer InGaAs quantum well under high injection level: Study of band-filling and broadening effects, Proc. SPIE, 2693, 640-651 (1996).
  • P. G. Eliseev and I. V. Akimova, Emission of InGaAs quantum-size structures. Quant. Electron., (in Russian), 25 (3) (1998).
  • P. G. Eliseev and I. V. Akimova, High-injection behavior of InGaAs quantum well, Proc. SPIE, 3625, 728-739 (1999).

III. Electrical properties of the laser diodes (laser oscillators and amplifiers).

  • P. G. Eliseev, Vu Van Luc, Semiconductor optical amplifiers: multifunctional possibilities, photoresponse and phase shift properties, Pure Appl. Opt., 4, 295-313 (1995).
  • P. G. Eliseev, J. Maege, G. Erbert, G. Beister, Threshold drop of the differential resistance of stripe quantum-well InGaAs-GaAlAs lasers, Quant. Electron., 25 (2) 99-101 (1995).
  • P. G. Eliseev, A. G. Glebov, M. Osinski, Current self-distribution effect in diode lasers: analytic criterion and numerical study, IEEE J. Select. Top. Quant. Electron., 3 (2), 499-506 (1997, April).

IV. Modeling of laser diodes.

  • P. G. Eliseev, M.Osinski, Modeling consideration for UV diode lasers based on GaN. Top. Meeting "Semiconductor Lasers: Advanced Devices and Applications", 21-23 Aug. 1995, Keystone, Co, Paper PDP-1
  • P. G. Eliseev, A. G. Glebov, M. Osinski, Analysis of current self-distribution induced by self-focusing filamentation in laser diode, CLEO'97 (Conf. on Lasers and Electro- Optics, Techn. Digest), Baltimore MD, May 18-23, pap. CWF21, pp. 238, 1997.
  • P. G. Eliseev, A. G. Glebov, M. Osinski, Modeling of current crowding accompanying optical filament formation in semiconductor lasers and amplifiers, Proc. SPIE, 2994 (1997).
  • V. A. Smagley, G. A. Smolyakov, P. G. Eliseev, M. Osinski, Current self-distribution effect in vertical-cavity surface-emitting semiconductor lasers, SPIE Symp. "Photonics West", 3283 (1), 171-182 (1998).
  • P. G. Eliseev, Line shape function for semiconductor laser modeling, Electron. Lett., 33 (24), 2046-2048 (1997, Nov. 20).

V. Optical damage and degradation phenomena.

  • P. G. Eliseev, Optical strength of semiconductor laser materials, Progr. Quant. Electron., 20 (1), 1-82 (1996).
  • M. Osinski, P. Perlin, P. Eliseev, G. Liu, D. Barton, Degradation of SQW InGaN green light emitting diodes under high electric stress, MRS Symp., 449, 1179-1183 (1997)
  • P. G. Eliseev, Optical damage and self-damage in semiconductor laser materials, Annual Symp. Optical Materials for High Power Lasers, Boulder CO, October 6-8, 1997.
  • P. G. Eliseev, H.-B. Sun, S. Juodkazis, H. Misawa, and S. Sakai,
    Laser-induced damage threshold and surface processing of GaN at 400 nm wavelength, Jpn. J. Appl. Phys., 38, L839-L841 (1999).

VI. Nitride-based structures and LEDs.

  • P. Perlin, V. Iota, B. A. Weinstein, P. Wisniewski, T. Suski, P. G. Eliseev, and M. Osinski, Influence of pressure on the photoluminescence and electroluminescence of GaN/InGaN/AlGaN quantum wells, Appl. Phys. Lett., 70 (22), 2993-2995 (1997, June 2).
  • M. Osinski and P. G. Eliseev, Radiative recombination mechanism in high brightness Nichia blue LEDs, Solid-State Electron., 41, 155-157 (1997).
  • P. G. Eliseev, P. Perlin, J. Lee, and M. Osinski, "Blue" temperature-induced shift and band-tail emission in InGaN-based light sources, Appl. Phys. Lett., 71 (5) , 569- 571 (1997, Aug. 4).
  • G. A. Smolyakov, V. A. Smagley, W. Nakwaski, P. G. Eliseev, and M. Osinski, Design of InGaN/GaN/AlGaN VCSELs using the effective frequency method, Proc. SPIE, 3625, 324-335 (1999).
  • P. G. Eliseev, M. Osinski, H. Li, I. V. Akimova, Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells, Appl. Phys. Lett. 75 (24), 3838-3840 (1999, Dec. 13)


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