| Research
Equipment at CHTM
Semiconductor
Materials Growth
CHTM boasts an extensive materials growth capability featuring 2
MOCVD reactors and 3 MBE systems. These reactors are used for the
growth of a wide range of III-V and other semiconductor materials
in support of CHTM research. The two MOCVD reactors and one MBE
system are located in our state-of-the-art crystal growth facility
that also incorporates, some of the major materials characterization
equipment described below. (more
information on materials growth)
Materials
Characterization Tools
CHTM
has, or has regular access to, a wide range of materials and device
characterization equipment that allows us to fully analyze as-grown
epitaxial material and optoelectronic or electronic devices. This
equipment includes:
- Transmission
Electron Microscopy (resolution 3Å)
- High
Resolution X-section TEM on III-V heterostructures
- High
Resolution X-ray Diffraction Analysis (Philips MRD).
- Electrochemical
C-V profiling of doping concentration
- Photoluminescence
(300 K to 4 K) using a range of pulsed and CW laser pump sources,
with wavelengths as short as 252 nm.
- Variable
Temperature Hall Mobility Measurements
- Raman
spectroscopy
- Atomic
Force Microscopy
Optoelectronics
and Microelectronics Device Processing
CHTM
operates a fully equipped, 1800 ft2 class-100 cleanroom for semiconductor
materials processing. Key processes and characterization tools available
in this cleanroom include; solvent cleaning, photolithography (Two
Karl-Suss contact aligners with either positive or negative photo-resist
technology), wet-chemical etching, dry etching (Plasma Quest ECR),
e-beam evaporation for metallization and dielectric deposition,
PECVD for dielectric deposition, plasma etch cleaning, rapid thermal
annealing, ellipsometry, surface profilometry, scanning electron
microscopy, energy dispersive x-ray analysis (EDS). We are currently
adding an electron-beam lithography system software package to our
existing JEOL 5800 SEM. This software, NPGS (nanometer pattern generation
system) by JC Nabity Lithography Systems, will enable us to write
features as small as 0.1 µm. (more
information on Cleanroom)
Device
Characterization
- Deep
Level Transient Spectroscopy (DLTS)
- Optical
Microscopy, Scanning Electron Microscopy
- Confocal
microscopy and confocal photoluminescence with submicron resolution.
- Model
6200 MicroManipulator DC probe station, curve tracer, DC parameter
analyzer, and capacitance meter for measurement of I-V and C-V
characteristics.
- HP
4145A DC Semiconductor Parameter Analyzer
- HP
8510 Network Analyzer (up to 20 GHz) and HP 22-GHz Spectrum Analyzer.
- CW
and pulsed UV lasers for optical pumping including:
- Quadrupled
Nd:YAG laser operating at 266 nm with 10 ns pulses, 10 Hz
repetition rate, and 0.25J/pulse peak power
- CW
doubled Ar laser operating at 257 nm with peak power of 50
m;
- CW
Ar laser operating at 363.8 nm with peak power of 300 mW
- Excimer
laser capable of 100 ns pulsed operation at 248 nm and 345
nm.
- High
speed electrical measurements up to 30GHz
- Optical
beam profiling for analysis of laser output beam characteristics
- Optical
spectroscopy including picosecond spectroscopy (streak camera,
autocorrelator, etc)
- Optical
power measurement
- Ultrafast
optical measurements for analysis of mode behavior or carrier
dynamics
- High
speed digital sampling to 40GHz
- Multichannel
pseudorandom data generation at 1GB/s per channel, with eye diagram
capability
- Optical
fiber handling and test instrumentation
Computer
Facility and Related Resources
CHTMs'
Computer Center
High
Performance Computing Education and Research Center (HPCERC)
For
more demanding computing projects HPCERC operates two parallel computing
facilities that are used by CHTM and other UNM researchers;
- The
512 processor IBM SP2 located at the Maui High Performance Computing
Center (MHPCC) in Maui with high speed T3 communication link from
the mainland to MHPCC.
-
HI and the 32 processor IBM SP1 at the Albuquerque Resource Center
(ARC).
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