|
Curriculum Vitae |
|
|
• |
|
|
DIANA L.
HUFFAKER Research Interests Nanodot-based optoelectronic devices including III-V/Si photonics, lasers, single-photon emitters, III-V nanotransistors, solar cells and electronic characterization of biomaterials. Current research projects focus on device development, crystal growth (MBE and MOCVD) and characterization of patterned and self-assembled quantum dots in compound III-(As, P, N, Sb), modeling of self-assembled processes along with electronic characterization of biomaterials. Professional Experience The University of New Mexico, Albuquerque, NM Electrical and Computer Engineering Department & Center for High Technology Materials: August 2001-present: Associate Professor (Tenure granted 5/05) – funded research include III-V/Si photonics, directed assembly processes, optical memory devices, non-linear nanostructure properties, QD lasers and emitters. Program Director, Principle Investigator, Nanoscience and Microsystems NSF/National Cancer Institute IGERT Fellowship: September 2005 – August 2010: lead the diverse group of faculty participants across eight departments including the UNM Health Sciences Center, facilitate their efforts through communication with the UNM administration, conduct daily business, assist fellows and faculty to resolve unforeseen or immediate challenges. Alexander von Humboldt Research Fellow Technische Universitaet Berlin Institut für Festkoerperphysik January 2005-July 2006 Picolight, Inc., Boulder, Colorado June 2000 – August 2001: Senior Processing Scientist – leadership on a research team to develop a 1300 nm VCSEL product based on MOCVD-grown InGaAsN active regions on GaAs. The University of Texas at Austin, Austin, Texas Microelectronics Research Center: March 1999 – June 2000: Research Scientist; MBE crystal growth and characterization of In(Ga)As/GaAs quantum dot active regions for microcavities, VCSELs and heterostructure lasers. Research focuses on studies to understand strain-driven QD formation and control of QD shape/size and the effect on emission wavelength and recombination properties. Nov. 1996 - March 1999: Research Associate; Novel device design, fabrication, characterization, and MBE crystal growth for extended wavelength GaAs-based lasers using quantum dots. Accomplishments include the first 1.3 µm GaAs-based quantum dot laser. Jan. 1995 - Oct. 1996: Postdoctoral Research Assistant; Fabrication, characterization, device design and crystal growth by MBE of oxide-confined vertical-cavity surface-emitting lasers for ultra-low power application and densely-packed, multi-wavelength arrays. June 1991 - Dec. 1994: Graduate Research Assistant; Fabrication and characterization of vertical-cavity surface-emitting lasers to investigate the effects of optical and electrical confinement on the light emission characteristics. Accomplishments include demonstration of the first oxide-confined vertical cavity laser structure. Awards and Honors 2004 Alexander Von Humboldt Fellowship recipient – Fellowship will be completed at Technical University, Berlin, Solid State Electronics Laboratory, January 2005 – July 2006. 2004 Elected Member- LEOS Board of Governors – three-year term. 2002 Compound Semiconductor Symposium Young Scientist Award Citation: Developments in novel quantum dot and selectively oxidized optoelectronic materials and devices including the first oxide-confined VCSEL and the first 1.3 mm self-organized quantum dot laser. Educational Record University of Arizona, Department of Engineering, Tucson, Arizona B.S. in Engineering Physics, December 1986 University of Texas, Department of Graduate Studies, Austin, Texas M.S. in Materials Sciences, December 1990 Ph.D. in Electrical Engineering, December 1994 Ph.D. Thesis Topic: Vertical Cavity Devices Based on Buried Native-Oxide Layers Significant Professional Activities (2003 – present) IEEE LEOS Board of Governors, Elected Member (2005 – 2008). Women in Engineering, Region 6 Chair (2005) TMS Electronic Materials Conference Committee (2005-present). Device Research Conference Technical Program Committee, Nanoscale Science and Technology (2005-present) Committee Chair – IEEE/LEOS Technical Subcommittee for Optical Materials and Processes, 2003-2006. Conference Chair – SPIE Photonics West “Nanotechnology in Photonics” Committee, 2003-2006. Conference Chair – IEEE/LEOS Semiconductor Laser Conference (Baltimore MD, 2003). Editor - IEEE Circuits and Devices Magazine (Feb. 1999 – 9/2003). Workshop Organizer (DARPA) – Long-Wave on GaAs, Napa Valley, CA, June 2002. Chair – LEOS Albuquerque Chapter (2001-2003). Institute of Electrical and Electronics Engineers (IEEE), Senior Member Material Research Society - Member Women in Science and Engineering – Member Associated Science and Engineering Educators - Member Important and Highly Cited Publications D.L. Huffaker, D.G. Deppe, K. Kumar, and T.J. Rogers, "Native-Oxide Defined Buried Ring Contact for Low Threshold Vertical-Cavity Lasers," Appl. Phys. Lett. 65, 97-99 (4 July, 1994). ISI times cited: 258 D.L. Huffaker, J. Shin, and D.G. Deppe, "Low-Threshold Half-Wave Vertical-Cavity Lasers," Electron. Lett. 30, 1946-1947 (10 November, 1994). ISI times cited: 76 D.L. Huffaker and D.G. Deppe, " Low Threshold Vertical-Cavity Surface-Emitting Lasers Based on High Contrast Distributed Bragg Reflectors," Appl. Phys. Lett. 70, (7 April, 1997). ISI times cited: 27 D.L. Huffaker, H. Deng, and D.G. Deppe, "1.15 µm Wavelength Oxide-Confined Quantum Dot Vertical-Cavity Surface-Emitting Laser," IEEE Phot. Tech. Lett. 10, (February, 1998). ISI times cited: 30 D.L. Huffaker and D.G. Deppe, "Electroluminescence Efficiency of 1.3 µm Wavelength InGaAs/GaAs Quantum Dots," Appl. Phys. Lett. 73, (27 July, 1998). ISI times cited: 79 D.L. Huffaker, G. Park, Z. Zou, O.B. Shchekin, and D.G. Deppe, "1.3 µm Room Temperature GaAs-Based Quantum Dot Laser," Appl. Phys. Lett. 73, 2564-2565 (2 November, 1998). ISI times cited: 225 L.A. Graham, D.L. Huffaker, and D.G. Deppe, "Spontaneous Lifetime Control in a Native-Oxide-Apertured-Microcavity," Appl. Phys. Lett. 74, 2408 (1999). ISI times cited: 42 D.L. Huffaker and D.G. Deppe, "Electron and Hole Tunneling in a Moderate Density Quantum Dot Ensemble With Shallow Confinement Potentials," Appl. Phys. Lett. 73, 366-368 (1998). ISI times cited: 17 L. Zhang, T. Boggess, D.G. Deppe, D.L. Huffaker, O.B. Shchekin, and C. Cao, "Dynamic Response of 1.3 µm Wavelength InGaAs/GaAs Quantum Dots," Appl. Phys. Lett. 76, 1222-1224 (6 March, 2000). ISI times cited: 22 T.F. Boggess, L. Zhang, D.G. Deppe, D.L. Huffaker, “Spectral Engineering of Carrier Dynamics in InGaAs Self-Assembled Quantum Dots,” Appl. Phys. Lett., 78, 276-278 (15 Jan. 2001). ISI times cited: 13 A. A. El-Emawy, S. Birudavolu, P.S. Wong, Y.–B. Jiang, H. Xu, S. Huang, and D.L. Huffaker, “Formation Trends in Quantum Dot Growth using Metalorganic Chemical Vapor Deposition” J. Appl. Phys. 93, p. 3529-3534 (March 15, 2003). ISI times cited: 7. S.Birudavolu, N.Nuntawong, G.Balakrishnan, Y.C.Xin, S.Huang, S.C.Lee, S.R.J. Brueck, C.P. Hains and D.L. Huffaker, “Selective Area Growth of InAs Quantum Dots Formed on a Patterned GaAs Substrate” Appl. Phys. Lett., 85, 2337-2340 (Sept 20, 2004). Recent Collaborators: UNM: Prof. Steve Brueck (CHTM), Prof. Jeff Brinker (ChNE), Prof. Abhaya Datye (ChNE), Prof. Ralph Dawson (CHTM), Prof. Sang Han (ChNE), Prof. Steve Hersee, Prof. Sanjay Krishna (CHTM), Prof. Luke Lester (CHTM), Prof. Kevin Malloy (CHTM), Prof. Mansoor Sheik-Bahai (Physics), Prof. Tom Sigmon (CHTM), Prof. Jim Thomas (Phys), Prof. Vakhtang Putkaradze (Math), Prof. Wolfgang Rudolf (Physics). Nation-wide: Prof. Pallab Bhattacharya (UMichigan), Prof. Tom Boggess (UIowa), Prof. Kent Choquette (UIUC), Dr. Weng Chow (SNL), Prof. Jim Coleman (UIUC), Prof. Dennis Deppe (UT Austin), Dr. Jack Jewell (Picolight Inc.), Dr. Victor Klimov (LANL), Prof. Galina Khitrova (UArizona), Prof. Dennis Prather, (UDelaware), Prof. John O’brien (USC), Prof. Axel Scherer (Cal Tech), Prof. Fred Schubert (RPI), Prof. Henryk Temkin (TTech), Prof. Selim Unlu (Boston U). International: Prof. Dieter Bimberg (TU Berlin), Prof. Peter Blood (U. Cardiff), Prof. Guillaume Huyet (UCC, Ireland), Prof. Andrea Fiore (EPFL, Lausanne).
JOURNAL PUBLICATIONS Total Citations: > 2003 as of 10/05 Student advisees are noted in italics. 1. D.L. Huffaker, W.D. Lee, D.G. Deppe, C. Lei, T.J. Rogers, J.C. Campbell, and B.G. Streetman, "Optical Memory Using a Vertical-Cavity Surface-Emitting Laser," IEEE Photon. Tech. Lett. 3, 1064-1066 (December, 1991). ISI times cited: 6 2. D.G. Deppe, D.L. Huffaker, T.J. Rogers, C. Lei, Z. Huang, and B.G. Streetman, "First-Order Phase Transition in a Laser Threshold," Appl. Phys. Lett. 60, 3081-3083 (22 June, 1992). ISI times cited: 2 3. D.L. Huffaker, D.G. Deppe, C. Lei, T.J. Rogers, B.G. Streetman, S.C. Smith, and R.D. Burnham, "Cascadability of an Optically Latching Vertical-Cavity Surface-Emitting Laser," Electron. Lett. 28, 734-736 (9 April, 1992). ISI times cited: 0 4. D.L. Huffaker, C. Lei, D.G. Deppe, C.J. Pinzone, J.G. Neff, and R.D. Dupuis, "Controlled Spontaneous Emission in Room Temperature Semiconductor Microcavities," Appl. Phys. Lett. 60, 3203-3205 (29 June, 1992). ISI times cited: 28 5. D.L. Huffaker, Z. Huang, C. Lei, D.G. Deppe, C.J. Pinzone, J.G. Neff, and R.D. Dupuis, "Effect on Spontaneous Emission of Quantum Well Placement in a Short Vertical Cavity," Appl. Phys. Lett. 61, 877-879 (24 August, 1992). ISI times cited: 4 6. C. Lei, C.J. Pinzone, Z. Huang, D.L. Huffaker, D.G. Deppe, J.G. Neff, and R.D. Dupuis, "Room Temperature Spontaneous Emission in 5mm Long AlGaAsVertical Cavities," J. Appl. Phys. 73, 3153-3157 (1 April, 1993). ISI times cited: 2 7. D.G. Deppe, D.L. Huffaker, and C. Lei, "Performance Issues Related to Dielectric Stack Reflectors in Vertical-Cavity Surface-Emitting Lasers," SPIE Proceedings on International Symposia on Optoelectronics Packaging and Interconnects, Los Angeles, Vol. 1851, pp. 128-137, January 20-21, 1994. 8. D.G. Deppe, C. Lei, D.L. Huffaker, and C.C. Lin, "Spontaneous Emission From Planar Microstructures," J. Mod. Optics. 41, 325-344 (February 1994). ISI times cited: 36 9. D.L. Huffaker, C.C. Lin, D.G. Deppe, T.J. Rogers, and B.G. Streetman, "Mode Dependence on Mirror Contrast in Fabry-Perot Microcavity Lasers," IEEE Photon. Tech. Lett. 6, 135-138 (February 1994). ISI times cited: 19 10. C.C. Hansing, H. Deng, D.L. Huffaker, D.G. Deppe, B.G. Streetman, and J. Sarathy, "Low-Threshold Continuous-Wave Surface Emitting Lasers with Etched Void Confinement," IEEE Photon. Tech. Lett. 6, 320-322 (March 1994). ISI times cited: 24 11. D.L. Huffaker, D.G. Deppe, K. Kumar, and T.J. Rogers, "Native-Oxide Defined Buried Ring Contact for Low Threshold Vertical-Cavity Lasers," Appl. Phys. Lett. 65, 97-99 (4 July, 1994). ISI times cited: 258 12. D.L. Huffaker, D.G. Deppe, and T.J. Rogers, "Transverse Mode Behavior in Native-Oxide-Defined Low Threshold Vertical-Cavity Lasers," Appl. Phys. Lett. 65, 1611-1613 (26 September, 1994). ISI times cited: 33 13. T.J. Rogers, D.L. Huffaker, H. Deng, Q. Deng, and D.G. Deppe, "Influence of Cavity Tuning on the Transverse Mode in Vertical-Cavity Lasers," IEEE Phot. Tech. Lett. 7, 238-240 (March 1995). ISI times cited: 8 14. H. Deng, C.C. Lin, D.L. Huffaker, D.G. Deppe, Q. Deng, and T.J. Rogers, "Temperature Dependence of the Transverse Lasing Mode in Vertical-Cavity Lasers," J. Appl. Phys. 77, 2279-2286 (15 March, 1995). ISI times cited: 17 15. D.L. Huffaker, J.L. Shin, H. Deng, C.C. Lin, D.G. Deppe, and B.G. Streetman, "Improved Mode Stability in Low Threshold Single Quantum Well Native-Oxide Defined Vertical-Cavity Lasers," Appl. Phys. Lett. 65, 2642-2644 (21 November, 1994). ISI times cited: 12 16. D.L. Huffaker, J. Shin, and D.G. Deppe, "Low-Threshold Half-Wave Vertical-Cavity Lasers," Electron. Lett. 30, 1946-1947 (10 November, 1994). ISI times cited: 76 17. H. Deng, D.L. Huffaker, J. Shin, and D.G. Deppe, "Gain Switching in a Vertical Cavity Laser with High Contrast Mirrors," Electron. Lett. 31, 278-279 (16 February, 1995). ISI times cited: 7 18. D.L. Huffaker, C.C. Lin, J. Shin, and D.G. Deppe, "Resonant Cavity Light Emitting Diode with an AlxOy/GaAs Reflector," Appl. Phys. Lett. 66, 3096-3098 (5 June, 1995). ISI times cited: 23 19. D.L. Huffaker, J. Shin, and D.G. Deppe, "Lasing Characteristics of Low Threshold Microcavity Lasers using Half-Wave Spacer Layers and Lateral Index Confinement," Appl. Phys. Lett. 66, 1723-1725 (3 April, 1995). ISI times cited: 21 20. D.L. Huffaker, D.G. Deppe, and J. Shin, "Threshold Characteristics of Planar and Index-Guided Microcavity Lasers," Appl. Phys. Lett. 67, 4-6 (3 July, 1995). ISI times cited: 11 21. D.G. Deppe, D.L. Huffaker, J. Shin, and Q. Deng, "Very Low Threshold Index-Confined Planar Microcavity Lasers," IEEE Phot. Tech. Lett. 7, 965-967 (September, 1995). ISI times cited: 27 22. H. Deng, Q. Deng, D.G. Deppe, D.L. Huffaker, and J. Shin, "Transverse and Temporal Mode Dependence on Mirror Contrast in Microcavity Lasers," IEEE J. Quant. Electron. 31, 2026-2036 (11 November, 1995). ISI times cited: 10 23. D.L. Huffaker and D.G. Deppe, "Spontaneous Coupling to Planar and Index-Confined Quasi-Modes of Fabry-Perot Microcavities," Appl. Phys. Lett. 67, 2594-2596 (30 October, 1995). ISI times cited: 10 24. D.L. Huffaker, D.G. Deppe, C. Lei, and L.A. Hodges, "Sealing of AlAs Against Oxidative Decomposition and Its Use in Device Fabrication," Appl. Phys. Lett. 68, 1948-1950 (1 April, 1996). ISI times cited: 9 25. D.L. Huffaker, L.A. Graham, and D.G. Deppe, "Fabrication of High-Packing-Density Vertical Cavity Surface Emitting Laser Arrays using Selective Oxidation," IEEE Phot. Tech. Lett. 8, 596-598 (May, 1996). ISI times cited: 10 26. D.L. Huffaker and D.G. Deppe, "Multi-Wavelength, Densely-Packed 2x2 Vertical-Cavity Surface-Emitting Laser Array Fabricated Using Selective Oxidation," IEEE Phot. Tech. Lett. 8, 858-860 (July, 1996). ISI times cited: 32 27. D.L. Huffaker, L.A. Graham, H. Deng, and D.G. Deppe, "Sub-40µA Continuous-Wave Lasing in an Oxidized Vertical-Cavity Surface-Emitting Laser with Dielectric Mirrors," IEEE Phot. Tech. Lett. 8, 974-976 (August, 1996). ISI times cited: 56 28. D.L. Huffaker, D.G. Deppe, C. Lei, and L.A. Hodge, "Sealing AlAs Against Oxidative Decomposition and Its Use in Device Fabrication," in Conference on Lasers and Electro-Optics, Vol. 9, 1996 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1996) pp. 206-207. 29. T.-H. Oh, D.L. Huffaker, L.A. Graham, H. Deng, and D.G. Deppe, "Steam Oxidation of GaAs," Electron. Lett., 32, 91, 2024-2026 (Oct. 10, 1996). ISI times cited: 8 30. T.-H. Oh, D.L. Huffaker, and D.G. Deppe, "Size Effects in Small Oxide Confined Vertical-Cavity Surface-Emitting Lasers," Appl. Phys. Lett. 69, 3152-3154 (18 November, 1996). ISI times cited: 29 31. D.L. Huffaker, H. Deng, and Q. Deng, and D.G. Deppe, "Ring and Stripe Oxide-Confined Vertical-Cavity Surface-Emitting Lasers," Appl. Phys. Lett. 69, 3477-3479 (2 December, 1996). ISI times cited: 8 32. (Invited) D.G. Deppe, D.L. Huffaker, H. Deng, Q. Deng, and T.-H. Oh, "Ultra-Low Threshold Current Vertical Cavity Lasers for Photonic Integrated Circuits," IEICE Transactions on Electronics, E80C, 664-674 (May 1997). ISI times cited: 0 33. D.L. Huffaker, "Dependence of Wavelength Control on Dielectric Structure for Vertical-Cavity Surface-Emitting Lasers," J. Appl. Physics, 81, 1598-1600 (1 February, 1997). ISI times cited: 2 34. D.G. Deppe and D.L. Huffaker, "High Spatial Coherence Vertical-Cavity Surface-Emitting Laser Using a Long Monolithic Cavity," Electron. Lett. 33, 211-213 (30 January, 1997). ISI times cited: 9 35. L.A. Graham, D.G. Deppe, and D.L. Huffaker, "Exciton Spectral Splitting Near Room Temperature From High Contrast Semiconductor Microcavities," Appl. Phys. Lett. 70, 814-816 (17 February, 1997). ISI times cited: 7 36. D.L. Huffaker and D.G. Deppe, "Low Threshold Vertical-Cavity Surface-Emitting Lasers Based on High Contrast Distributed Bragg Reflectors," Appl. Phys. Lett. 70, 1781-1783 (7 April, 1997). ISI times cited: 27 37. D.L. Huffaker, T.-H. Oh, and D.G. Deppe, "Tunnel Injection Active Region in an Oxide-Confined Vertical-Cavity Surface-Emitting Laser," IEEE Phot. Tech. Lett. 9, 716-718 (June, 1997). ISI times cited: 3 38. D.G. Deppe, T.-H. Oh, and D.L. Huffaker, "Eigenmode Confinement in the Dielectrically Apertured Fabry-Perot Microcavity," IEEE Phot. Tech. Lett. 9, 713-715 (June, 1997). ISI times cited: 20 39. Y. Qian, Z.H. Zhu, Y.H. Lo, D.L. Huffaker, D.G. Deppe, H.Q. Hou, B.E. Hammons, W. Lin, and Y.K. Tu, "Low Threshold Proton Implanted 1.3µm Vertical-Cavity Top-Surface-Emitting Lasers with Dielectric and Wafer-Bonded GaAs/AlAs Bragg Mirrors," IEEE Phot. Tech. Lett. 9, 866-868 (July, 1997). ISI times cited: 4 40. D.L. Huffaker, O. Baklenov, L.A. Graham, B.G. Streetman, and D.G. Deppe, "Quantum Dot Vertical-Cavity Surface-Emitting Laser With a Dielectric Aperture," Appl. Phys. Lett. 70, 6362-6364 (5 May, 1997). 41. D.L. Huffaker, L.A. Graham, and D.G. Deppe, "Low-Threshold Continuous-Wave Operation of an Oxide-Confined Vertical-Cavity Surface-Emitting Laser Based on a Quantum Dot Active Region and Half-Wave Cavity," Electron. Lett. 33, 1225-1226 (1997). ISI times cited: 5 42. T.-H. Oh, D.L. Huffaker, and D.G. Deppe, "Comparison of Vertical-Cavity Surface-Emitting Lasers Based on Half-Wave Cavity Spacers and Confined by Single or Double Apertures," IEEE Phot. Tech. Lett. 9, 875-877 (July, 1997). ISI times cited: 3
43. Y. Qian, Z.H. Zhu, Y.H. Lo, D.L. Huffaker, D.G. Deppe, H.Q. Hou,
B.E. Hammons, W. Lin, and Y.K. Tu, "Long Wavelength (1.3 µm)
Vertical-Cavity Surface-Emitting Lasers With a Wafer-Bonded Mirror
and an Oxygen-Implanted Confinement Region," Appl. Phys. Lett. 71,
25-27 (7 July, 1997). ISI times cited: 22
44.
(Invited) D.G. Deppe, D.L. Huffaker, T.-H. Oh, and Q.
Deng, "Low Threshold Vertical-Cavity Surface-Emitting Lasers Based
on Oxide-Confinement and High Contrast Distributed Bragg
Reflectors," IEEE J. Sel. Top. Quant. Electron. 3, 893-904 (June,
1997). ISI times cited: 33
45. Y.
Qian, Z.H. Zhu, Y.H. Lo, D.L. Huffaker, D.G. Deppe, H.Q. Hou,
B.E. Hammons, W. Lin, and Y.K. Tu, "Submilliamp 1.3 µm
Vertical-Cavity Surface-Emitting Lasers With a Threshold Current
Density of Less Than 500 A/cm2,"
Electron. Lett. 33, 1052-1054 (5 June, 1997). ISI times cited: 19
46.
D.L. Huffaker and D.G. Deppe, "Improved Performance of
Oxide-Confined Vertical-Cavity Surface-Emitting Lasers Using a
Tunnel Injection Active Region," Appl. Phys. Lett. 71, 1449-1451 (15
September, 1997). ISI times cited: 14
47.
T.-H. Oh, M.R. McDaniel, D.L. Huffaker, and D.G. Deppe,
"Cavity-Induced Antiguiding in a Selectively-Oxidized
Vertical-Cavity Surface-Emitting Laser," IEEE Phot. Tech. Lett. 10, 12-14
(January, 1998). ISI times cited: 17
48. J.C.
Campbell, D.L. Huffaker, H. Deng, and D.G. Deppe, "Quantum
Dot Resonant Cavity Photodiode With Operation Near 1.3µm
Wavelength," Electron. Lett. 33, 1337-1339, (17 July, 1997). ISI
times cited: 35
49. O.
Baklenov, D.L. Huffaker, A. Anselm, D.G. Deppe, and B.G.
Streetman, "Influence of Al Content on Formation of InGaAlAs Quantum
Dots Grown by Molecular Beam Epitaxy," J. Appl. Phys. 82, 6362-6364
(15 December, 1997). ISI times cited: 17
50.
D.L. Huffaker, H. Deng, and D.G. Deppe, "1.15 µm Wavelength
Oxide-Confined Quantum Dot Vertical-Cavity Surface-Emitting Laser,"
IEEE Phot. Tech. Lett. 10,
185-187
(February, 1998). ISI times cited: 30
51. M.R.
McDaniel, D.L. Huffaker, and D.G. Deppe, "Hybrid
Dielectric/Metal Reflector for Low Threshold Vertical-Cavity
Surface-Emitting Lasers," Electron. Lett. 33, 1704-1705 (25
September, 1997). ISI times cited: 3
52. D.G.
Deppe, A. Kudari, D.L. Huffaker, H. Deng, Q. Deng, and J.C.
Campbell, "Mode Coupling in a Narrow Spectral Bandwidth Quantum Dot
Microcavity Photodetector," IEEE Phot. Tech. Lett. 10,
252-254
(February, 1998). ISI times cited: 2
53.
D.L. Huffaker, L.A. Graham, and D.G. Deppe, "Ultra-Narrow
Electroluminescence Spectrum From the Ground State of an Ensemble of
Self-Organized Quantum Dots," Appl. Phys. Lett. 72, 214-216 (12
January, 1998). ISI times cited: 16
54. L.A.
Graham, D.L. Huffaker, Q. Deng, and D.G. Deppe, "Controlled
Spontaneous Lifetime in Microcavity Confined InGaAlAs/GaAs Quantum
Dots," Appl. Phys. Lett. 72, 1670-1672 (6 April, 1998). ISI times
cited: 19
55.
D.L. Huffaker and D.G. Deppe, "Electroluminescence Efficiency of
1.3 µm Wavelength InGaAs/GaAs Quantum Dots," Appl. Phys. Lett. 73, 520-522
(27 July, 1998). ISI times cited: 79
56.
T.-H. Oh, M.R. McDaniel, D.L. Huffaker, and D.G. Deppe,
"Guiding and Anti-Guiding in Epitaxially Regrown Vertical-Cavity
Surface-Emitting Lasers," Appl. Phys. Lett. 72, 2782-2784 (1998).
ISI times cited: 0
57.
D.L. Huffaker and D.G. Deppe, "Electron and Hole Tunneling in a
Moderate Density Quantum Dot Ensemble With Shallow Confinement
Potentials," Appl. Phys. Lett. 73, 366-368 (1998). ISI times cited:
17
58. L.A.
Graham, D.L. Huffaker, S.M. Cuzak, Q. Deng, and D.G. Deppe,
"Spontaneous Lifetime Control For Quantum Dot Light Emitters in
Dielectrically-Apertured Fabry-Perot Microcavities," J. Appl. Phys.
85, 3383-3385 (15 March, 1999). ISI times cited: 7
59. G.
Park, O.B. Shchekin, D.L. Huffaker, and D.G. Deppe, "Lasing
From InGaAs/GaAs Quantum Dots With Extended Wavelength and
Well-Defined Harmonic Oscillator Energy Levels," Appl. Phys. Lett.
73, 3351-3353
(7 December, 1998). ISI times cited: 33
60. Z.
Zou, O.B. Shchekin, G. Park, D.L. Huffaker, and D.G. Deppe,
"Threshold Temperature Dependence of Lateral Cavity Quantum Dot
Lasers," IEEE Phot. Tech. Lett. 10, 1673-1675 (December, 1998). ISI
times cited: 14
61.
D.L. Huffaker, G. Park, Z. Zou, O.B. Shchekin, and D.G. Deppe,
"1.3 µm Room Temperature GaAs-Based Quantum Dot Laser," Appl. Phys.
Lett. 73, 2564-2565 (2 November, 1998). ISI times cited: 225
62. G.
Park, D.L. Huffaker, Z. Zou, O.B. Shchekin, and D.G. Deppe,
“Temperature Dependence of Lasing Characteristics for
Long-Wavelength (1.3 µm) Quantum Dot Lasers,” IEEE Phot. Tech.
Lett., IEEE Photon. Techn. Lett. 11, 301-303 (March 1999). ISI times
cited: 60
63.
D.L. Huffaker, Z. Zou, G. Park, O.B. Shchekin, and D.G. Deppe,
“Effects of Spontaneous Emission Rates on Lasing Characteristics of
Long-Wavelength (1.3 µm) GaAs-Based Lasers,” J. Electron. Mat.,
532-536 (May 1999). ISI times cited: 1
64. L.A.
Graham, D.L. Huffaker, and D.G. Deppe, "Spontaneous Lifetime
Control in a Native-Oxide-Apertured-Microcavity," Appl. Phys. Lett.
74, 2408-2411 (1999). ISI times cited: 42
65. D.G.
Deppe, D.L. Huffaker, S. Csutak, Z. Zou, G. Park, and O.B.
Shchekin, "Spontaneous Emission and Threshold Characteristics of 1.3
µm InGaAs/GaAs Quantum Dot GaAs-Based Lasers," IEEE. J. Quant.
Electron., 1238-1246
(August 1999). ISI times cited: 29
66. Deppe, D.G.; Graham, L.A.; Huffaker, D.L.,”Enhanced
spontaneous emission using quantum dots and an apertured
microcavity,” IEEE Journal of Quantum Electronics; vol.35, no.10,
p.1502-8 Oct. 1999. ISI times cited: 18
67. Z.
Zou, D.L. Huffaker, S. Csutak, and D.G. Deppe, "Ground State
Lasing From a Quantum Dot Oxide-Confined Vertical-Cavity
Surface-Emitting Laser," Appl. Phys. Lett. 75, 22-25 (July, 1999).
ISI times cited: 15
68.
D.L. Huffaker and D.G. Deppe, "Intracavity Contacts For Low
Threshold Oxide-Confined Vertical-Cavity Surface-Emitting Lasers,"
IEEE Phot. Tech. Lett. 11, 934-936 (August, 1999). ISI times cited:
9
69. G.
Park, O.B. Shchekin, D.L. Huffaker, S. Csutak, and D.G.
Deppe, "Room-Temperature Continuous-Wave Operation of a
Single-Layered 1.3 µm Quantum Dot Laser," Appl. Phys. Lett. 75,
3267-3269
(22 November, 1999). ISI times cited: 85
70.
Zaitsev, S.V.; Graham, L.A.; Huffaker, D.L.; Gordeev, N.Yu.;
Kopchatov, V.I.; Karachins, L.Ya.; “Superradiance in semiconductors”
Fizika i Tekhnika Poluprovodnikov; Dec. 1999; vol.33, no.12,
p.1460-1461. ISI times cited: 3
71. S.
Krishna, D. Zhu, J. Xu, K.K. Linder, O. Qasaimeh, and P.
Bhattacharya, D.L. Huffaker, "Structural and Luminescence
Characteristics of Cycled Submonolayer InAs/GaAs Quantum Dots with
Room-Temperature Emission at 1.3 µm" J. of Appl. Physics, 11,
6135-6137 (Dec. 1999) ISI times cited: 9
72. Z.
Zou, D.L. Huffaker, and D.G. Deppe, "Ultra-Low Threshold
Cryogenic Vertical-Cavity Surface-Emitting Laser," IEEE Phot. Tech.
Lett., 12, 1-2 (Jan. 2000). ISI times cited: 4
73. G.
Park, O.B. Shchekin, D.L. Huffaker, and D.G. Deppe, "Low
Threshold Oxide-Confined 1.3 µm Quantum Dot Laser," IEEE Phot. Tech.
Lett. 1120-1122
(March 2000). ISI times cited: 0
74. L.
Zhang, T. Boggess, D.G. Deppe, D.L. Huffaker, O.B. Shchekin,
and C. Cao, "Dynamic Response of 1.3 µm Wavelength InGaAs/GaAs
Quantum Dots," Appl. Phys. Lett, 76, 1222-1224 (6 Sept. 2000). ISI
times cited: 22
75.
D.L. Huffaker, G. Park, Z. Zou, O.B. Shchekin, and D.G. Deppe,
"Continuous-Wave Low Threshold Performance of 1.3 µm InGaAs/GaAs
Quantum Dot Lasers," IEEE J. Sel. Top. Quant. Electron., 6,
452-461
May-June 2000. ISI times cited: 18
76. Xu,
O. Qasaimeh and P. Bhattacharya, D.L. Huffaker and D.G.
Deppe, "GaAs/Al0.30Ga0.70As
Multiple Quantum Well Dual Focus Fresnel Lens-Modulator," Electron.
Lett., 36, 76-77 (Jan. 6, 2000). ISI times cited: 0
77. O.
Shchekin, G. Park, D.L. Huffaker, D.G. Deppe, “Discrete
Energy Levels and the Threshold temperature Dependence of Quantum
Dots,” Appl. Phys. Lett. 77, 466-468 (24 July 2000). ISI times
cited: 34
78. D.G.
Deppe, D.L. Huffaker, “Quantum Dimensionality, Entropy, and
the Modulation Response of Quantum Dot Lasers,” Appl. Phys. Lett.,
77, 3325-3327 (20 Nov. 2000). ISI times cited: 15
80.
O. Shchekin, G. Park, D.L. Huffaker, Q. Mo, D.G.Deppe,
“Low-threshold continuous-wave two-stack quantum-dot laser with
reduced temperature sensitivity,” IEEE Photon. Techn. Lett. (Sept.
2000). ISI times cited: 15 81. O. Qasaimeh, W. Zhou, P. Bhattacharya, D. Huffaker, D. Deppe, “Monolithically Integrated Low-power Phototransceiver Incorporating InGaAs/GaAs Quantum-dot Microcavity LED and Modulated Barrier Photodiode,” Electron. Lett., 36, 1955-1957 (9 Nov. 2000). ISI times cited: 2 82. C. Ell, P. Brick, M. Hubner, P. Brick, Ch. Spiegelberg, H.M. Gibbs, G. Khitrova, D.G. Deppe, and D.L. Huffaker, Phys. Rev. Lett., 85, 5392-5395 (18 Dec. 2000).
83. O. Qasaimeh, w. Zhou, P. Bhattacharya, D. Huffaker, D. Deppe, “Monolithically Integrated Low-power Phototransceiver Incorporating InGaAs/GaAs Quantum-dot Microcavity LED and Modulated Barrier Photodiode,” IEEE Photon. Techn. Lett.,12, 1683-1685 (Dec. 2000). ISI times cited: 2
84. E.S Lee, C. Ell, P. Brick, Ch. Spiegelberg, H.M. Gibbs, G. Khitrova, D.G. Deppe, D.L. Huffaker, “Saturation of Normal-Mode Coupling in Aluminum-Oxide Aperture Semiconductor Nanocavities,” J. Appl. Pys., 89, 807-809 (1 Jan. 2001). ISI times cited: 1
85. T.F. Boggess, L. Zhang, D.G. Deppe, D.L. Huffaker, “Spectral Engineering of Carrier Dynamics in InGaAs Self-Assembled Quantum Dots,” Appl. Phys. Lett., 78, 276-278 (15 Jan. 2001). ISI times cited: 13
86. O. Qasaimeh, W. Zhou, P. Bhattacharya, D. Huffaker, D.G. Deppe, ”Monolithically integrated low-power phototransceivers for optoelectronic parallel sensing and processing applications,” Journ. Light. Techn. 19, 546-52 (April 2001). ISI times cited: 2
87. T. Yoshie, A. Scherer, Hao Chen. D. Huffaker, D. Deppe, “Optical characterization of two-dimensional photonic crystal cavities with indium arsenide quantum dot emitters” Appl. Phys. Lett. 79, p. 114-116 (2 July 2001). ISI times cited: 26
88. A. A. El-Emawy, S. Birudavolu, P.S. Wong, Y.–B. Jiang, H. Xu, S. Huang, and D.L. Huffaker, “Formation Trends in Quantum Dot Growth using Metalorganic Chemical Vapor Deposition” J. Appl. Phys. 93, p. 3529-3534 (March 15, 2003). ISI times cited: 7
Y.-C. Xin, L. G. Vaughn, L. R. Dawson, A. Stintz, Y. Lin, L.F. Lester, K.J. Malloy and D.L. Huffaker, “InAs Quantum Dot GaAs-based Lasers Grown on AlGaAsSb Metamorphic Buffers,” J. Appl. Phys. 94, 2133-2135 (July 15, 2003). ISI times cited: 4
90. G.Balakrishnan, S. Birudavolu, L.R.Dawson, D. L. Huffaker, Huifang Xu, Yingbing Jiang, “1.6 mm Emission from InAs Quantum Dots grown on a GaAs Substrate using an AlGaAsSb Metamorphic Buffer,” Quantum Confined Semiconductor Nanostructures, 737, MRS manuscript# E2.4, edited by J.M.Buriak, D.D.M.Wayner, F.Priolo, B. White, V.Klimov, L. Tsybeskov (2003).
91. A. El-Emawy,S. Birudavolu, S. Huang, H. Xu, and D.L. Huffaker, “Selective Surface Migration for Defect-free Quantum Dot Ensembles using Metal Organic Chemical Vapor Deposition,” J. Crystal Growth 255, 3-4, 213 – 219 (August 2003). ISI times cited: 0
92. G. Balakrishnan, S. Huang, L.R.Dawson, Huifang Xu, and D.L.Huffaker, “Analysis of Atomic Structure in InAs Quantum Dashes Grown on AlGaAsSb Metamorphic Buffers Using HR-TEM”, J. Vacuum Science and Technology, 22, 3, 1529-1533 (May 2004). ISI times cited: 0
93. Ganesh Balakrishnan, Shenghong Huang, Thomas J. Rotter, Andreas Stintz, L.R. Dawson, Kevin J. Malloy, H. Xu and D.L. Huffaker, “2 µm emission from InAs quantum dashes grown on a GaAs substrate using AlGaAsSb metamorphic buffers”, Appl. Phys Lett. 84, 2058-2060 (March 2004). ISI times cited: 0
94. N. Nuntawong, S. Birudavolu, C.P. Hains, S. Huang, H. Xu and D.L. Huffaker, ”Effect of strain-compensation in stacked 1.3 mm InAs/GaAs quantum dot active regions grown by MOCVD” Appl. Phys. Lett. 85, 3050-3053 (October 11, 2004). ISI times cited: 2
95. S.Birudavolu, N.Nuntawong, G.Balakrishnan, Y.C.Xin, S.Huang, S.C. Lee, S.R.J. Brueck, C.P. Hains and D.L. Huffaker, “Selective Area Growth of InAs Quantum Dots Formed on a Patterned GaAs Substrate” Appl. Phys. Lett., 85, 2337-2340 (Sept 20, 2004).
96. S.W. Osborne, P. Blood, P.M. Smowton, Y. C. Xin, A. Stintz, D.L. Huffaker, and L.F. Lester, “Optical absorption cross section of quantum dots” J. Phys.: Condens. Matter 16, S3749–S3756 (2004).
97. P. Blood, P. Smowton, J. Lutton, Y.C. Xin, A. Stintz, D. Huffaker, L. F. Lester, “State filling in InAs quantum-dot laser structures” IEEE Journal of Quantum Electronics, 40, 12, 1639 (2004).
98. G. Balakrishnan, S. Huang, A. Koshlakaugh, L.R. Dawson and D.L. Huffaker, “Mechanism for defect-free growth of highly-mismatched AlSb on Si” Appl. Phys. Lett. 86, 034105 (Jan 13, 2005). ISI times cited: 1
99. S. Birudavolu, S.Q. Luong, N. Nuntawong ,Y.C. Xin ,C.P. Hains and D.L. Huffaker, “In-situ Mask Removal in Selective Area Epitaxy using Metal Organic Chemical Vapor Deposition” Journ. Crystal Growth, 277, 1-4, 97 (April 19, 2005).
100. N. Nuntawong, S. Birudavolu, C.P. Hains, S. Huang, H. Xu and D.L. Huffaker, “Quantum dot lasers based on a stacked and strain-compensated active region grown by metalorganic chemical vapor deposition” Appl. Phys. Lett. 86, 193115 (May 16, 2005).
101. G. Balakrishnan, S. Huang, L.R. Dawson Y. –C. Xin, P. Conlin and D.L. Huffaker, “High Quality AlSb Bulk Material on Si Substrates using a Monolithic Self-Assembled Quantum Dot Nucleation Layer” J. Vacuum Science and Technology B 22, 3, 1529 (4/2005).
102. G. Balakrishnan, S.H. Huang, A. Koskhlagh, P. Hill, A. Amtout, S. Krishna, G.P. Donati, L.R. Dawson and and D.L. Huffaker, “Room-temperature Optically-pumped InGaSb Quantum Well Lasers Monolithically Grown on a Si (100) Substrate” Electron. Lett. 41, 9 (April 28, 2005).
103. D. L. Huffaker, C.P. Hains, N. Nuntawong Y. C. Xin, P. S. Wong, L. Yan, S. R. J. Brueck and L. Lester “Temperature-dependent photoluminescence from patterned InAs quantum dots formed using metalorganic chemical vapor epitaxy,” AIP ID number 069602JAP (January 15, 2006).
104. N. Nuntawong, S. Huang, Y.-B. Jiang, C.P. Hains and D.L. Huffaker, “Defect dissolution in strain-compensated, stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition,” accepted to Appl. Phys. Lett. (Sept 5, 2005). 105. S.H. Huang, G. Balakrishnan, A. Khoshakhlagh, A. Jallipalli, L.R. Dawson, and D.L. Huffaker, “Strain Relief by Periodic Misfit Arrays for Low Defect Density GaSb on GaAs”, Appl. Phys. Lett., ID number 070606APL, (February 6, 2006). 106. G. Balakrishnan, A. Jallipalli, S.H. Huang, A. Khoshakhlagh, P. Rotella, A. Amtout, S. Krishna, C.P. Haines, L.R. Dawson and D.L. Huffaker, “Monolithic growth of III-Sb on Si for Integrated Photonic light Emitters” submitted to IEEE Journ. Select. Topics in Silicon Photonics.
107. G. Balakrishnan, S.H. Huang, A. Khoshakhlagh, A. Jallipalli, P. Rotella, A. Amtout, S. Krishna, C.P. Haines, L.R. Dawson and D.L. Huffaker, “Room-temperature Optically-pumped GaSb Quantum Well based VCSEL Monolithically Grown on a Si (100) Substrate” submitted Electron. Lett.
108. A. Jallipalli, G. Balakrishnan, S.H. Huang and D.L. Huffaker, “Modeling of Interfacial Misfit Array Dislocations for Highly Mismatched III-V Semiconductor Materials using Molecular Mechanics”’ submitted to J. Cryst. Growth, 1/4/06.
109. J. Tatebayashi , N. Nuntawong, Y. C. Xin, P. S. Wong, S. Huang, L. F. Lester and D. L. Huffaker “Ground-state lasing of stacked InAs/GaAs quantum dots with GaP strain-compensation layers grown by metalorganic chemical vapor deposition”, submitted to APL, 1/4/06.
OTHER PUBLICATIONS 1. (Invited) D.L. Huffaker and D.G. Deppe, "Low Threshold Microcavity Lasers Using Buried AlxOy Layers for Lateral Confinement," Hot Topics - LEOS Newsletter 10, pp. 8-11, April 1996.
2. Y. Qian, Z.H. Zhu, Y.H. Lo, D.L. Huffaker, D.G. Deppe, H.Q. Hou, B.E. Hammons, W. Lin, and Y.K. Yu, "1.3 µm Vertical Cavity Surface Emitting Lasers," University Research Highlights - LEOS Newsletter 11, pp. 16-18, June, 1997.
3. D.G. Deppe and D.L. Huffaker, "Quantum Well and Quantum Dot Light Emitters Confined in Oxide-Semiconductor Microcavities," Optics & Photonics News, vol. 9, no. 1 pp. 30-33 (January, 1998).
4. D.L. Huffaker and D.G. Deppe, "InGaAs/GaAs Quantum Dots for GaAs-Based Lasers Emitting at 1.3 µm," IEEE Circuits and Devices Magazine, pp. 8-13 (May 1999)
5. C. Ell, H.M. Gibbs, G. Khitrova, E.S. Lee, S. Park, D.G. Deppe, and D.L. Huffaker, "Toward Quantum Entanglement in a Quantum Dot Nanocavity," LEOS Newsletter 13, pp. 8-9, (August 1999).
6. D. Huffaker, “Milton Chang: Been there, done that - Showing others the way” IEEE Circuits and Devices; 18, 2, p.49-51 (March 2002).
7. (Invited) Y.-C. Xin, L. G. Vaughn, L. R. Dawson, A. Stintz, Y. Lin, L.F. Lester, K.J. Malloy and D.L. Huffaker, “InAs Quantum Dot GaAs-based Lasers Grown on AlGaAsSb Metamorphic Buffers," Virtual Journal of Nanoscale Science & Technology, David Awschalom, Editor (July 28, 2003).
8. Simon W. Osborne, Peter Blood, Peter M. Smowton, and Julie Lutti, Y. C. Xin, Andreas Stintz, Diana L. Huffaker, and Luke F. Lester, “Energy Distributions of carriers in Quantum Dot Lasers and Structures,” Proceedings of SPIE, 5349, 63-68 (June 2004).
9. (Invited) Ganesh Balakrishnan, Shenghong Huang, Thomas J. Rotter, Andreas Stintz, L.R. Dawson, Kevin J. Malloy, H. Xu and D.L. Huffaker "2.0 mm Wavelength InAs Quantum Dashes Grown on a GaAs Substrate using a Metamorphic Buffer Layer," Virtual Journal of Nanoscale Science & Technology (March 29, 2004). 10. (Invited) N. Nuntawong, S. Birudavolu, C.P. Hains, S. Huang, H. Xu and D.L. Huffaker, ”Effect of strain-compensation in stacked 1.3 mm InAs/GaAs quantum dot active regions grown by MOCVD” Virtual Journal of Nanoscale Science & Technology (Nov. 1, 2004). 11. (Invited) N. Nuntawong, S. Birudavolu, C.P. Hains, S. Huang, H. Xu and D.L. Huffaker, “Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition,” Virtual Journal of Nanoscale Science & Technology (May 16, 2005). 12. (Invited) N. Nuntawong, S. Huang, Y.-B. Jiang, C.P. Hains and D.L. Huffaker, “Defect dissolution in strain-compensated, stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition,” Virtual Journal of Nanoscale Science & Technology (September 19, 2005). 13. N. Nuntawong, P.S. Wong, Y. C. Xin, C. P. Hains, S. Huang, L. F. Lester and D.L. Huffaker, “Strain-compensation in closely-stacked quantum dot active regions grown by metal organic chemical vapor deposition” SPIE Proceedings – Photonics West 2006. 14. D. L. Huffaker, C.P. Hains, N. Nuntawong Y. C. Xin, P. S. Wong, L. Yan, S. R. J. Brueck and L. Lester "Temperature-dependent photoluminescence from patterned InAs quantum dots formed using metalorganic chemical vapor epitaxy," Virtual Journal of Nanoscale Science & Technology, February 13, 2006.
CONFERENCE PRESENTATIONS
1. D.G. Deppe, D.L. Huffaker, C. Lei, W.D. Lee, T.J. Rogers, J.C. Campbell, and B.G. Streetman, "Bistability and Optical Switching in an AlGaAs-GaAs-InGaAs Vertical-Cavity Surface-Emitting Laser," 49th Annual Device Research Conference, June 17-19, 1991, Boulder, CO, paper IIIA4.
2. D.G. Deppe, D.L. Huffaker, C. Lei, C.J. Pinzone, J.G. Neff, and R.D. Dupuis, "Controlled Spontaneous Emission in Room Temperature Microcavities," WOCSEMAD, Feb. 17-19, 1992, San Antonio, TX.
3. (Invited) D.G. Deppe, C. Lei, D.L. Huffaker, Z. Huang, C.C. Lin, "Spontaneous Emission in Semiconductor Microcavities", Rank Prize Fund Minisymposium, September 21-24, 1992, Grasmere, England.
4. D.L. Huffaker, D.G. Deppe, C.J. Pinzone, T.J. Rogers, B.G. Streetman, and R.D. Dupuis, "Threshold Dependence on Cavity Length and Mirror Reflectivity in Fabry-Perot Microcavity Semiconductor Lasers with High Contrast Mirrors", Quantum Optoelectronics Topical Meeting, March 17-19, 1993, Palm Springs, NV Paper QWA4.
5. D.G. Deppe, D.L. Huffaker, C.C. Lin, and T.J. Rogers, "Nearly Planar Low Threshold Vertical-Cavity Surface-Emitting Lasers Using High Contrast Mirrors and Native Oxide," Conference on Lasers and Electro-Optics 1994 Technical Digest Series, vol. 8, pp. CPD2-1/3-6/8, May 8-13, 1994, Anaheim, CA.
6. D.L. Huffaker, D.G. Deppe, K. Kumar, and T.J. Rogers, "Native Oxide Defined Ring Contact for the Vertical-Cavity Surface-Emitting Laser, 52nd Device Research Conference, June 20-22, 1994, Boulder, CO.
7. (Invited) D.G. Deppe, D.L. Huffaker, H. Deng, and C.C. Lin, "Low Threshold Vertical Cavity Lasers Based on Native-Oxidation of AlAs and Their Transverse Mode Structure," Engineering Foundation Conference on High Speed Optoelectronic Devices for Communications and Interconnects, August 14-18, 1994, San Luis Obispo, CA.
8. D.L. Huffaker, D.G. Deppe, K. Kumar, J. Shin, B.G. Streetman, and T.J. Rogers, "Heterostructure Dependence of Buried Native-Oxides for Vertical-Cavity Devices Grown by Molecular Beam Epitaxy," North American Conference on Molecular Beam Epitaxy, October 8-10, 1994, Urbana, IL.
9. H. Deng, D.L. Huffaker, J. Shin, and D.G. Deppe, "Dependence of Large Signal Response on the Transverse Mode Structure in Vertical-Cavity Lasers," Ultrafast Electronics and Optoelectronics Topical Meeting, March 13-17, 1995, Dana Point, CA, Paper UTuE13.
10. D.L. Huffaker, J. Shin, and D.G. Deppe, "Low Threshold Microcavity Lasers using a Half-Wave Cavity Spacer," Quantum Optoelectronics Topical Meeting, March 13-17, 1995, Dana Point, CA, Paper QFB3.
11. D.G. Deppe, D.L. Huffaker, H. Deng, J. Shin, and Q. Deng, "Spontaneous Emission Coupling to the Lasing Mode in a Fabry-Perot Microcavity with High Contrast AlxOy/GaAs Bragg Reflectors," Quantum Optoelectronics Topical Meeting, March 13-17, 1995, Dana Point, CA, Paper QThE6.
12. (Invited) D.G. Deppe and D.L. Huffaker, "Lasing Mode Structure in Very Small Vertical-Cavity Lasers Fabricated Using Selective Conversion of AlAs to AlxOy," Optical Society of America Annual Meeting, September 10-15, 1995, Portland, OR, Paper MW1.
13. (Invited) D.G. Deppe and D.L. Huffaker, "Spontaneous Emission and Lasing in 3-Dimensionally Confined Semiconductor Microcavities," Winter Colloquium on Physics of Quantum Electronics, January 7-10, 1996, Snowbird, UT.
14. D.L. Huffaker and D.G. Deppe, "Native Oxides for Optoelectronic Applications," WOCSEMMAD - 1996, February 12-14, Santa Fe, NM.
15. D.L. Huffaker, D.G. Deppe, C. Lei, and L.A. Hodges, "Sealing AlAs Against Oxidative Decomposition and Its Use in Device Fabrication," Conference on Lasers and Electro-Optics, June 2-7, 1996, Anaheim, CA, Paper JTuH5.
16. D.L. Huffaker and D.G. Deppe, "Wavelength Control Through Lateral Device Size in a 2x2 Vertical-Cavity Surface-Emitting Laser Array Fabricated Using Selective Oxidation," 1996 Device Research Conference, Santa Barbara, CA, Paper P018.
17. D.L. Huffaker, T.-H. Oh, L.A. Graham, H. Deng, D.G. Deppe, C. Lenox, and B.G. Streetman, "Sub-40µA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors," Ninth International Conference on Molecular Beam Epitaxy, Malibu, CA, August 5-9, 1996, P4.9.
18. (Invited) D.G. Deppe and D.L. Huffaker, "Spontaneous Coupling and Wavelength Control in Very Small Index Confined Vertical-Cavity Surface-Emitting Lasers," High Speed Opto-Electronics for Communications II - Engineering Foundation Conference, August 11-15, 1996, Snowbird, UT.
19. T.-H. Oh, D.L. Huffaker, L. Graham, H. Deng, and D.G. Deppe, "Steam Oxidation of GaAs to Form GaxOy," 190th Meeting of The Electrochemical Society, San Antonio, TX, October 6-11, 1996, Paper 424.
20. (Invited) D.G. Deppe and D.L. Huffaker, "Transverse and Temporal Mode Characteristics in Planar and Index-Confined Microcavity Lasers," Optical Society of America Annual Meeting, October 20-25, 1996, Rochester, NY, Paper I-00074.
21. (Invited) D.L. Huffaker and D.G. Deppe, "Low Threshold AlxOy - Confined VCSELs and Densely-Packed Arrays," IEEE Lasers and Electro-Optics Society 1996 Annual Meeting, November 18-21, 1996, Boston, MA.
22. (Invited) L.A. Graham, Q. Deng, D.G. Deppe, and D.L. Huffaker, "Exciton Response in High Contrast Native Oxide - Semiconductor Microcavities," Winter Colloquium on Physics of Quantum Electronics, January, 1997, Snowbird.
23. (Invited) D.L. Huffaker, T.-H. Oh, H. Deng, Q. Deng, and D.G. Deppe, "Oxide-Confined VCSELs Using Half-Wave Cavity and High Contrast Dielectric Mirrors," SPIE's International Symposium - Optoelectronics '97 - Vertical-Cavity Surface-Emitting Lasers, San Jose, CA, February 8-14, 1997.
24. L.A. Graham, D.L. Huffaker, and D.G. Deppe, "Effects of Steam Oxidation on Interface Recombination Using a Single In0.2Ga0.8As Quantum Well in a Half-Wave Microcavity VCSEL," SPIE's International Symposium - Optoelectronics '97 - Vertical-Cavity Surface-Emitting Lasers, San Jose, CA, February 8-14, 1997.
25. (Invited) D.G. Deppe, D.L. Huffaker, Q. Deng, T.-H. Oh, and H. Deng, "Microcavity Effects in Very Small Oxide Confined Vertical-Cavity Surface-Emitting Lasers," SPIE's International Symposium - Optoelectronics '97 - Physics and Simulation of Optoelectronic Devices V, San Jose, CA, February 8-14, 1997.
26. D.L. Huffaker, T.-H. Oh, and D.G. Deppe, "AlxOy/GaAs Distributed Bragg Reflectors in an Oxide-Confined Half-Wave Vertical Cavity Laser," Workshop on Native Oxides of Compound Semiconductors, February 19-20, 1997, San Antonio, TX.
27. D.G. Deppe, D.L. Huffaker, O. Baklenov, L.A. Graham, and B.G. Streetman, "Very Low Threshold Vertical-Cavity Surface-Emitting Laser Based on a Native-Oxide Aperture and a Quantum Dot Active Region," Workshop on Native Oxides of Compound Semiconductors, February 19-20, 1997, San Antonio, TX.
28. Y. Qian, Z.H. Zhu, Y.H. Lo, H.Q. Hou, B.E. Hammons, D.L. Huffaker, D.G. Deppe, W. Lin, and Y.K. Tu, "Long Wavelength (1.3µm) Vertical-Cavity Surface-Emitting Lasers With a Wafer-Bonded Mirror and an Oxygen-Implanted Confinement Region," Optical Fiber Conference '97, Dallas, TX, February, 1997, Postdeadline Paper, PD-14.
29. Y. Qian, Z.H. Zhu, Y.H. Lo, D.L. Huffaker, D.G. Deppe, H.Q. Hou, B.E. Hammons, W. Lin, and Y.K. Tu, "Hydrogen Implanted 1.3µm Vertical-Cavity Surface-Emitting Lasers With Dielectric and Wafer-Bonded GaAs/AlAs Mirrors," 1997 Conference on Lasers and Electro-Optics, Baltimore, Maryland, May 18-23.
30. D.L. Huffaker, T.-H. Oh, and D.G. Deppe, "Oxide-Apertured VCSELs Using Oxide/GaAs Distributed Bragg Reflectors and Tunnel Injection," 1997 Conference on Lasers and Electro-Optics, Baltimore, Maryland, May 18-23.
31. (Invited) D.G. Deppe, D.L. Huffaker, T.-H. Oh, and Q. Deng "Oxide-Confinement: A Revolution in VCSEL Technology," 1997 Conference on Lasers and Electro-Optics, Baltimore, Maryland, May 18-23.
32. O. Baklenov, D.L. Huffaker, L.A. Graham, K.A. Anselm, D.G. Deppe, and B.G. Streetman, "Influence of Al Incorporation on Dot Size in Strained Layer Epitaxy of InGaAlAs Quantum Dots," 39th Electronic Materials Conference, 1997, Fort Collins, CO.
33. D.L. Huffaker, L.A. Graham, M.R. McDaniel, and D.G. Deppe, "Low-Threshold Continuous-Wave Operation of an Oxide-Confined Vertical-Cavity Surface-Emitting Laser Based on a Quantum Dot Active Region and Half-Wave Cavity," 1997 LEOS Summer Topical Meeting on VCSELs, to be presented.
34. Y. Qian, Z.H. Zhu, Y.H. Lo, D.L. Huffaker, D.G. Deppe, H.Q. Hou, B.E. Hammons, W. Lin, and Y.K. Yu, "High Performance 1.3 µm Vertical-Cavity Surface-Emitting Lasers with Oxygen-Implanted Confinement Regions and Wafer-Bonded Mirrors," 1997 LEOS Summer Topical Meeting on VCSELs, to be presented.
35. T.-H. Oh, D.L. Huffaker, M.R. McDaniel, and D.G. Deppe, "Single-Mode Vertical-Cavity Surface-Emitting Laser with Cavity Induced Antiguiding," 1997 IEEE LEOS Topical Meeting, to be presented.
36. D.L. Huffaker, L.A. Graham, M.R. MacDaniel, and D.G. Deppe, "InGaAlAs Quantum Dot Active Regions in Low-Threshold Continuous Wave Operation Oxide-Confined Vertical-Cavity Surface-Emitting Lasers," Tenth International Conference on Molecular Beam Epitaxy, October 5-8, 1995, Ann Arbor, MI, Paper III.9.
37. (Invited) D.G. Deppe, D.L. Huffaker, Q. Deng, T.-H. Oh, and L.A. Graham, "Oxide-Confined VCSELs with Quantum Well and Quantum Dot Active Regions," Proceedings of IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, November 10-13, 1997, San Francisco, CA, pp. 287-288.
38. D.L. Huffaker, H. Deng, J.C. Campbell, and D.G. Deppe, "1.27 µm Resonant Cavity PIN Photodetector using an InAs/GaAs Quantum Dot Active Region Grown on GaAs," Proceedings of IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, November 10-13, 1997, San Francisco, CA, pp. 237-238.
39. D.G. Deppe, Q. Deng, and D.L. Huffaker, "Mode Confinement in the Ultralow Threshold Fabry-Perot Microcavity Laser," Proceedings of IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, November 10-13, 1997, San Francisco, CA, p. 164.
40. J. Zhang, Y. Qian, Z.H. Zhu, Y.H. Lo, D.L. Huffaker, D.G. Deppe, H.Q. Hou, B.E. Hammons, W. Lin, and Y.K. Tu, "Dosage Effects on Oxygen Implanted Single-Bonded 1.3 µm Vertical-Cavity Surface-Emitting Lasers," Proceedings of IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, November 10-13, 1997, San Francisco, CA, pp. 426-427.
41. (Invited) D.L. Huffaker and D.G. Deppe, "InAs/GaAs Quantum Dot Active Regions in Oxide-Confined Vertical-Cavity Surface-Emitting Lasers," International Semiconductor Device Research Symposium, December 11-13, 1997, Charlottesville.
42. (Invited - Critical Review) D.G. Deppe and D.L. Huffaker, "Native Oxide Technology for III-V Optoelectronic Devices," Proceedings of the SPIE's International Symposium on Critical Review of Heterogeneous Integration: Systems on a Chip, San Jose, CA, January 24-30, 1998.
43. (Invited) D.L. Huffaker, H. Deng, and D.G. Deppe, "InAs/GaAs Quantum Dot Active Regions for Oxide-Confined Vertical Cavity Surface Emitting Lasers Operating at 1.15 µm," Proceedings of the SPIE's International Symposium on Physics and Simulation of Optoelectronic Device |