• Ph.D. Northwestern University, 1991
• M.S. Rutgers University, 1986
• B.S. Duke University, 1984

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We are interested in improving the electrical and optical properties of antimony-containing III-V semiconductor heterostructures, and to develop laser and detector devices operating in the 3-5 micron wavelength range. We hope to achieve this through a better understanding of the MBE-growth processes, improved control over interface formation, and fundamental studies of active layers incorporating type-II band alignments. Our laboratory is centered around a state-of-the-art molecular beam epitaxy (MBE) facility which is shared by CHTM and the Air Force Research Laboratory.

Recent areas of focus include the study of surface segregation phenomena as it affects interfacial mixing, in-situ control of MBE growth using desorption mass spectrometry, implementation of design of experiments methodology in MBE growth of mixed anion alloys, electrically- and optically-pumped mid-IR lasers using type-II band alignments, digital alloying techniques for improving the manufacturability of mixed anion alloys, and the growth and characterization of antimonide quantum dots.