• Digital alloy growth in mixed As/Sb heterostructures
  Kaspi, R; Donati, GP
  JOURNAL OF CRYSTAL GROWTH; 2003; v.251, p. 515-520
  
  Estimating the band discontinuity at GaInSb/GaSb heterojunction by investigation of single-quantum well photoluminescence
  Donati, GP; Kaspi, R; Malloy, KJ
  JOURNAL OF APPLIED PHYSICS; JAN 15 2003; v.93, no.2, p.1083-1086
  
  High-temperature performance in similar to 4 µm type-II quantum well lasers with increased strain
  Ongstad, AP; Kaspi, R; Chavez, JR; Dente, GC; Tilton, ML; Gianardi, DM
  JOURNAL OF APPLIED PHYSICS; NOV 15 2002; v.92, no.10, p.5621-5626
  
  High power and high brightness from an optically pumped InAs/InGaSb type-II mid-infrared laser with low confinement
  Kaspi, R; Ongstad, A; Dente, GC; Chavez, J; Tilton, ML; Gianardi, D
  APPLIED PHYSICS LETTERS; JUL 15 2002; v.81, no.3, p.406-408
  
  Optically pumped integrated absorber 3.4 µm laser with InAs-to-InGaAsSb type-II transition
  Kaspi, R; Ongstad, A; Moeller, C; Dente, GC; Chavez, J; Tilton, ML; Gianardi, D
  APPLIED PHYSICS LETTERS; JUL 16 2001; v.79, no.3, p.302-304
  
  As-soak control of the InAs-on-GaSb interface
  Kaspi, R; Steinshnider, J; Weimer, M; Moeller, C; Ongstad, A
  JOURNAL OF CRYSTAL GROWTH; MAY 2001; v.225, no.2-4, p.544-549
  
  Spectral blue-shift and improved luminescent properties with increasing GaSb layer thickness in InAs-GaSb type-II superlattices
  Ongstad, AP; Kaspi, R; Moeller, CE; Tilton, ML; Gianardi, DM; Chavez, JR; Dente, GC
  JOURNAL OF APPLIED PHYSICS; FEB 15 2001; v.89, no.4, p.2185-2188
  
  Response surface modeling of the composition of AlAsySb1-y alloys grown by molecular beam epitaxy
  Gopaladasu, P; Cecchi, JL; Malloy, KJ; Kaspi, R
  JOURNAL OF CRYSTAL GROWTH; MAY 2001; v.225, no.2-4, p.556-560
  
  Visualizing interfacial structure at non-common-atom heterojunctions with cross-sectional scanning tunneling microscopy
  Steinshnider, J; Weimer, M; Kaspi, R; Turner, GW
  PHYSICAL REVIEW LETTERS; OCT 2 2000; v.85, no.14, p.2953-2956
  
  1 x 3 active GaAs/AlGaAs planar waveguide optical switch
  Dong, XS; Wa, PL; Loehr, J; Kaspi, R
  ELECTRONICS LETTERS; JAN 6 2000; v.36, no.1, p.70-71
  
  Absorbance spectroscopy and identification of valence subband transitions in type-II InAs/GaSb superlattices
  Kaspi, R; Moeller, C; Ongstad, A; Tilton, ML; Gianardi, D; Dente, G; Gopaladasu, P
  APPLIED PHYSICS LETTERS; JAN 24 2000; v.76, no.4, p.409-411
  
  2 mu m GaInAsSb/AlGaAsSb midinfrared laser grown digitally on GaSb by modulated-molecular beam epitaxy
  Mourad, C; Gianardi, D; Malloy, KJ; Kaspi, R
  JOURNAL OF APPLIED PHYSICS; NOV 15 2000; v.88, no.10, p.5543-5546
  
  Current-induced guiding and beam steering in active semiconductor planar waveguide
  Dong, XS; LiKamWa, P; Loehr, J; Kaspi, R
  IEEE PHOTONICS TECHNOLOGY LETTERS; JUL 1999; v.11, no.7, p.809-811
  
  Compositional abruptness at the InAs-on-GaSb interface: optimizing growth by using the Sb desorption signature
  Kaspi, R
  JOURNAL OF CRYSTAL GROWTH; MAY 1999; v.202, p.864-867
  
  Kinetics of AlAs steam oxidation at low pressure and low temperature measured in-situ using a novel furnace design with an integral optical port
  Feld, SA; Loehr, JP; Sherriff, RE; Wiemeri, J; Kaspi, R
  INSTITUTE OF PHYSICS CONFERENCE SERIES; 1998; v.156, p.325-328
  
  Quasi-CW self-guided optical beams in GaAs-AlGaAs double heterostructure slab waveguides
  Kutsche, C; LiKamWa, P; Loehr, J; Kaspi, R
  ELECTRONICS LETTERS; APR 30 1998; v.34, no.9, p.906-907
  
  The effect of Al on Ga desorption during gas source-molecular beam epitaxial growth of AlGaN
  Jenny, JR; VanNostrand, JE; Kaspi, R
  APPLIED PHYSICS LETTERS; JAN 5 1998; v.72, no.1, p.85-87
  
  In situ optical monitoring of AlAs wet oxidation using a novel low-temperature low-pressure steam furnace design
  Feld, SA; Loehr, JP; Sherriff, RE; Wiemeri, J; Kaspi, R
  IEEE PHOTONICS TECHNOLOGY LETTERS; FEB 1998; v.10, no.2, p.197-199
  
  Nucleation of misfit and threading dislocations during epitaxial growth of GaSb on GaAs(001) substrates
  Qian, W; Skowronski, M; Kaspi, R; DeGraef, M; Dravid, VP
  JOURNAL OF APPLIED PHYSICS; JUN 1 1997; v.81, no.11, p.7268-7272
  
  In situ composition control of III-As1-xSbx alloys during molecular beam epitaxy using line-of-sight mass spectrometry
  Kaspi, R; Cooley, WT; Evans, KR
  JOURNAL OF CRYSTAL GROWTH; MAR 1997; v.173, no.1-2, p.5-13
  
  Dislocation density reduction in GaSb films grown on GaAs substrates by molecular beam epitaxy
  Qian, W; Skowronski, M; Kaspi, R
  JOURNAL OF THE ELECTROCHEMICAL SOCIETY; APR 1997; v.144, no.4, p.1430-1434
  
  Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs
  Chattopadhyay, K; Aubel, J; Sundaram, S; Ehret, JE; Kaspi, R; Evans, KR
  JOURNAL OF APPLIED PHYSICS; APR 15 1997; v.81, no.8, pt.1, p.3601-3606
  
  Crystal field splitting of defect pair spectra in GaAs
  Reynolds, DC; Look, DC; Jogai, B; Kaspi, R; Evans, KR
  SOLID STATE COMMUNICATIONS; APR 1997; v.102, no.1, p.47-51
  
  Bilayer growth period oscillation of the Sb-2 reactivity during molecular beam epitaxy of AlSb (001)
  Kaspi, R; Loehr, JP
  APPLIED PHYSICS LETTERS; DEC 15 1997; v.71, no.24, p.3537-3539
  
  Effect of well thickness on the two-dimensional electron-hole system in AlxGa1-xSb/InAs quantum wells
  Lo, I; Chiang, JC; Tsay, SF; Mitchel, WC; Ahoujja, M; Kaspi, R; Elhamri, S; Newrock, RS
  PHYSICAL REVIEW B-CONDENSED MATTER; MAY 15 1997; v.55, no.20, p.13677-13681
  
  Sb-surface segregation and the control of compositional abruptness at the GaAsSb/GaAs interface
  Kaspi, R; Evans, KR
  JOURNAL OF CRYSTAL GROWTH; MAY 1997; v.175, pt.2, p.838-843
  
  High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescence
  Reynolds, DC; Look, DC; Jogai, B; Kaspi, R; Evans, KR; Estes, M
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B; SEP-OCT 1997; v.15, no.5, p.1703-1706
  
  Substrate temperature change in III-V molecular beam epitaxy
  Evans, KR; Ehret, JE; Jones, CR; Kaspi, R
  JOURNAL OF CRYSTAL GROWTH; MAY 1997; v.175, pt.2, p.1316-1320
  
  Growth kinetics of GaN grown by gas-source molecular beam epitaxy
  Jenny, JR; Kaspi, R; Evans, KR
  JOURNAL OF CRYSTAL GROWTH; MAY 1997; v.175, pt.1, p.89-93
  
  Effects of In profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors
  Look, DC; Jogai, B; Kaspi, R; Ebel, JL; Evans, KR; Jones, RL; Nakano, K; Sherriff, RE; Stulz, CE; DeSalvo, GC; et. al.
  JOURNAL OF APPLIED PHYSICS; JAN 1 1996; v.79, no.1, p.540-544
  
  Improved p-channeL InAlAs/GaAsSb HIGFET using Ti/Pt/Au ohmic contacts to beryllium implanted GaAsSb
  Merkel, KG; Cerny, CLA; Bright, VM; Schuermeyer, FL; Monahan, TP; Lareau, RT; Kaspi, R; Rai, AK
  SOLID-STATE ELECTRONICS; FEB 1996; v.39, no.2, p.179-191
  
  Surface-chemistry evolution during molecular-beam epitaxy growth of InGaAs
  Evans, KR; Kaspi, R; Ehret, JE; Skowronski, M; Jones, CR
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B ; JUL-AUG 1995; v.13, no.4, p.1820-1823
  
  Growth of InGaAsSb layers in the miscibility gap – use of very-low-energy ion irradiation to reduce alloy decomposition
  Kaspi, R; Barnett, SA; Hultman, L
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B ; MAY-JUN 1995; v.13, no.3, p.978-987
  
  MBE growth of AlGaAs using Sb as a surfactant
  Kaspi, R; Reynolds, DC; Evans, KR; Taylor, EN
  INSTITUTE OF PHYSICS CONFERENCE SERIES ; 1995; no.141, p.57-62
  
  Phonon replicas in the photoluminescence emission of AlGaAs alloys
  Reynolds, DC; Look, DC; Kaspi, R; Talwar, DN
  APPLIED PHYSICS LETTERS ; JUN 19 1995; v.66, no.25, p.3447-3449
  
  Improved compositional abruptness at the InGaAs-on0GaAS interface by pre-saturation with In during molecular-beam epitaxy
  Kaspi, R; Evans, KR
  APPLIED PHYSICS LETTERS ; AUG 7 1995; v.67, no.6, p.819-821
  
  Citric-acid etching of GaAs1-xSbx, Al0.5Ga0.5Sb, and InAs for heterostructure device fabrication
  DeSalvo, GC; Kaspi, R; Bozada, CA
  JOURNAL OF THE ELECTROCHEMICAL SOCIETY ; DEC 1994; v.141, no.12, p.3526-3531
  
  Moving photoluminescence bands in GaAS1-xSbx layers grown by molecular-beam epitaxy on InP substrates
  Yu, PW; Stutz, CE; Manasreh, MO; Kaspi, R; Capano, MA
  JOURNAL OF APPLIED PHYSICS ; JUL 1 1994; v.76, no.1, p.504-508
  
  Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells
  Lo, I; Mitchel, WC; Kaspi, R; Elhamri, S; Newrock, RS
  APPLIED PHYSICS LETTERS ; AUG 22 1994; v.65, no.8, p.1024-1026
  
  Infrared studies of Be-doped GaAS grown by molecular-beam epitaxy at low temperatures
  Talwar, DN; Manasreh, MO; Stutz, CE; Kaspi, R; Evans, KR
  JOURNAL OF ELECTRONIC MATERIALS ; DEC 1993; v.22, no.12, p.1445-1448
  
  Desorption mass-spectrometric control of composition during MBE growth of AlGaAs
  Evans, KR; Kaspi, R; Jones, CR; Sherriff, RE; Jogai, V; Reynolds, DC
  JOURNAL OF CRYSTAL GROWTH ; FEB 1993; v.127, no.1-4, p.523-527
  
  Low-energy ion-assisted epitaxy of InGaAsSb on InP (100)
  Kaspi, R; Barnett, SA
  JOURNAL OF APPLIED PHYSICS ; 1991; v.69, no.11, p.7904-7906
  
  Analysis of GaAs(001) surface stoichiometry using monte-carlo simulations
  Kaspi, R; Barnett, SA
  SURFACE SCIENCE ; 1991; v.241, no.1-2, p.146-156
  
  Growth and properties of InGaAsSb alloys by ion-assisted deposition
  Kaspi, R; Hultman, L; Barnett, SA
  JOURNAL OF ELECTRONIC MATERIALS ; 1990; v.19, no.7, p.29-29

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