Krishna’s INfrared Detector Laboratory

 

Patents

· S. Krishna and O.J. Painter “High Performance Hyperspectral Detectors Using Ph Controlling Cavities” US Patent, 7,659,536, Feb 2010.

· Von Winckel; Gregory, Coutsias; Evangelos A. S. Krishna,  Spectral element eigensolver for inhomogeneous media Patent:  7,617,081, Dated:  November 10, 2009

· P. Dowd, P. Hill, L.R. Dawson and S.Krishna“Semiconductor Conductive Layers” (UNM-0670) Patent:  7583715 B2 Dated:  September 01, 2009 .

· S. Krishna, M. Hayat, and J.P. DavidIntersubband detector with avalanche multiplier region”,US Patent Number 7,271,405, September 2007.

· S. Krishna, M. Hayat, J. S. Tyo, U. Sakoglu and S. Raghavan “Spectrally Adaptive Quantum Dots In A Well Detector”, US Patent Number 7,217,951, May 2007

           Journal and Conference Publications

          

 

           2013

 

 

 

· Daniel Feezell, Yagya Sharma, and Sanjay Krishna, “Optical properties of nonpolar III-nitrides for intersubband photodetectors”,  J. Appl. Phys. 113, 133103 2013

· Zahyun Ku, Woo-Yong Jang,  Jiangfeng Zhou, Jun Oh Kim, Ajit V. Barve, Sinhara Silva, Sanjay Krishna, S. R. J. Brueck, Robert Nelson, Augustine Urbas,Sangwoo Kang, and Sang Jun Lee, “Analysis of subwavelength metal hole array structure for the enhancement of backilluminated quantum dot infrared photodetectors”  OPTICS EXPRESS  Vol. 21, No. 4  4709 25 February 2013

· Nutan Gautam, Stephen Myers, Ajit V. Barve, IEEE, Brianna Klein,Edward. P. Smith, Dave. R. Rhiger, Ha Sul Kim, Zhao-Bing Tian, and Sanjay Krishna, “Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices”, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 49, NO. 2, FEBRUARY (2013)

· J. O. Kim, S. Sengupta, A. V. Barve, Y. D. Sharma, S. Adhikary, S. J. Lee,S. K. Noh, M. S. Allen, J. W. Allen, S. Chakrabarti, and S. Krishna, “Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors”,  APPLIED PHYSICS LETTERS 102, 011131 (2013)

· Nutan Gautam, Stephen Myersa, Ajit V. Barve, Brianna Klein, E.P. Smith, Dave Rhiger, Elena Plis, Maya N. Kutty , Nathan Henry, Ted Schuler-Sandy, S. Krishna, “Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices” Infrared Physics & Technology (2013)

· Carl Asplund, Rickard Marcks, von Würtemberg, Dan Lantz, Hedda Malm, Henk Martijn, Elena Plis, Nutan Gautam, Sanjay Krishna, “Performance of mid-wave T2SL detectors with heterojunction barriers”, Infrared Physics & Technology (2013)

 

 

 

                 2012

 

 

· Woo-Yong Jang, Majeed M. Hayat, Payman Zarkesh-Ha, and Sanjay Krishna, “Continuous time-varying biasing approach forspectrally tunable infrared detectors”, OPTICS EXPRESS 29823 Vol. 20, No. 28  December (2012)

· V. M. Cowan, C. P. Morath, J. E. Hubbs, S. Myers, E. Plis, and S. Krishna, “Radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors using 63 MeV protons”, APPLIED PHYSICS LETTERS 101, 251108 (2012)

· G. A. Umana-Membreno, B. Klein, H. Kala,J. Antoszewski, N. Gautam, M. N. Kutty, E. Plis,  S. Krishna, and L. Faraone, “Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices” ,APPLIED PHYSICS LETTERS 101, 253515 (2012)

· Eric A. DeCuir, Jr. ; Gregory P. Meissner ; Priyalal S. Wijewarnasuriya ; Nutan Gautam ; Sanjay Krishna ; Nibir K. Dhar ; Roger E. Welser ; Ashok K. Sood,  Long-wave type-II superlattice detectors with unipolar electron and hole barriers”,  Opt. Eng. 51(12), 124001 (Dec 03, 2012). 

· Nutan Gautam, Ajit Barve, and Sanjay Krishna,  “Identification of quantum confined interband transitions in type-II InAs/GaSb superlattices using polarization sensitive photocurrent spectroscopy”, Appl. Phys. Lett. 101, 221119 (2012)

· Barve, A.V.; Sengupta, S.; Jun Oh Kim; Montoya, J.; Klein, B.; Shirazi, M.A.; Zamiri, M.; Sharma, Y.D.; Adhikary, S.; Godoy, S.E.; Woo-Yong Jang; Fiorante, G.R.C.; Chakrabarti, S.; Krishna, S. “Barrier Selection Rules for Quantum Dots-in-a-Well Infrared Photodetector  IEEE Journal of  Quantum Electronics”,  Volume: 48 , Issue: 10 2012 , PP: 1243 – 1251(2012)

· T. Schuler-Sandy, S. Myers, B. Klein, N. Gautam, P. Ahirwar, Z.-B. Tian, T. Rotter, G. Balakrishnan, E. Plis, and S. Krishna, “Gallium free type II InAs/InAsxSb1-x superlattice photodetectors”,  Appl. Phys. Lett. 101, 071111 (2012)

· Nutan Gautam,S. Myers, A. V. Barve, Brianna Klein, E. P. Smith, D. R. Rhiger,L. R. Dawson, and S. Krishna, “High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice”,  Appl. Phys. Lett. 101, 021106 (2012)

· S. Sengupta, J. O. Kim, A. V. Barve, S. Adhikary, Y. D. Sharma, N. Gautam, S. J. Lee,S. K. Noh, S. Chakrabarti, and S. Krishna, “Sub-monolayer quantum dots in confinement enhanced dots-in-a-well Heterostructure”, APPLIED PHYSICS LETTERS 100, 191111 (2012).

· A.V. Barve, S. Meesala, S. Sengupta, J. O. Kim, S. Chakrabarti and S. Krishna, “Investigation of Non-uniform Electric Field in Intersubband Quantum Infrared Photodetectors” Applied Physics Letters, Vol.100, pp.191107, 2012,

· P Martyniuk, J Wr´obel, E Plis, P Madejczyk, A Kowalewski, WGawron, S Krishna and A Rogalski, “Performance modeling of MWIR InAs/GaSb/B–Al0.2Ga0.8Sb type-II superlattice nBn detector”, Semicond. Sci. Technol. 27 (2012)

· Hui Fang, Steven Chuang, Kuniharu Takei, Ha Sul Kim, Elena Plis, Chin-Hung Liu, Sanjay Krishna, Yu-Lun Chueh, and Ali Javey, “Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors”, IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 4, APRIL 2012

· Kuniharu Takei,  Morten Madsen, Hui Fang, Rehan Kapadia, Steven Chuang,Ha Sul Kim, Chin-Hung Liu, E. Plis,  Junghyo Nah, Sanjay Krishna, Yu-Lun Chueh,Jing Guo, and Ali Javey, “Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors” , Nano Letters, 12 March, (2012).

· Elena A. Plis, Maya Narayanan Kutty, and Sanjay Krishna, “Passivation techniques for InAs/GaSb  strained layer superlattice detectors”,  Laser Photonics Rev., 1–15 (2012)

· E.A. Plis,M.N. Kutty,S. Myers,A. Rathi,E.H. Aifer,I. Vurgaftman, and S. Krishna, Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation”, Infrared Physics & Technology  February  (2012)

· D. Lackner , M. Steger M. L. W. Thewalt, O. J. Pitts, Y. T. Cherng, S. P. Watkins, E. Plis, and S. Krishna, InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations”, J. Appl. Phys. 111, 034507 (2012)

· A. V. Barve and S. Krishna, Photovoltaic quantum dot quantum cascade infrared photodetector”, Appl. Phys. Lett. 100, 021105 (2012)

· S. C. Lee, Y. D. Sharma, S. Krishna and S. R. J. Brueck, “Leaky-mode effects in plasmonic-coupled quantum dot infrared photodetectors”,  Appl. Phys. Lett. 100, 011110 (2012)

 

 

 

Conference Papers

 

· Sanjay Krishna, “Barrier Engineering in Quantum Dots in a Well Detector”, Proc. SPIE 8268, 82680W (2012)

· Eric A. DeCuir, Gregory P. Meissner, Priyalal S. Wijewarnasuriya, Nutan Gautam, Sanjay Krishna, Nibir K. Dhar, Roger E. Welser, Ashok K. Sood,  “Long-wave type-II superlattice detectors with unipolar electron and hole barriers”, Optical Engineering. 51(12), 124001 (Dec 03 2012); doi: 10.1117/1.OE.51.12.124001

· Eric A. DeCuir, Nutan Gautam, Gregory P. Meissner, Priyalal Wijewarnasuriya, Sanjay Krishna, Nibir K. Dhar, Thomas G. Bramhall, Roger E. Welser, Ashok K. Sood, “Design and development of low dark current SLS detectors for IRFPA applications”, Proc. SPIE. 8512, Infrared Sensors, Devices, and Applications II 85120N (October 19, 2012) doi: 10.1117/12.974237

· Brianna Klein, Nutan Gautam, Stephen Myers, Sanjay Krishna, “Temperature-dependent absorption derivative on InAs/GaSb Type II superlattices”, Proc. SPIE. 8353, Infrared Technology and Applications XXXVIII 83530X (May 1, 2012) doi: 10.1117/12.919616

· Vincent M. Cowan, Christian P. Morath, Stephen Myers, Elena Plis, Sanjay Krishna, “Radiation tolerance of a dual-band IR detector based on a pBp architecture”, Proc. SPIE. 8353, Infrared Technology and Applications XXXVIII 83530F (May 1, 2012) doi: 10.1117/12.925064

· Jun Oh Kim, Saumya Sengupta, Yagya Sharma, Ajit V. Barve, Sang Jun Lee, Sam Kyu Noh, Sanjay Krishna, “Sub-monolayer InAs/InGaAs quantum dot infrared photodetectors (SML-QDIP)”, Proc. SPIE. 8353, Infrared Technology and Applications XXXVIII 835336 (May 1, 2012) doi: 10.1117/12.919458

· Stephen Myers, Brianna Klein, Elena Plis, Nutan Gautam, Chris Morath, Vincent Cowan, Sanjay Krishna, “Photoconductive gain in barrier heterostructure infrared detectors”, Proc. SPIE. 8353, Infrared Technology and Applications XXXVIII 83532Z (May 1, 2012) doi: 10.1117/12.919648

· Hedda Malm, Rickard Marcks von Würtemberg, Carl Asplund, Henk Martijn, Amir Karim, Oscar Gustafsson, Elena Plis, Sanjay Krishna, “Recent developments in type-II superlattice detectors at IRnova AB”, Proc. SPIE. 8353, Infrared Technology and Applications XXXVIII 83530T (May 1, 2012) doi: 10.1117/12.918992

· Jean Nguyen, Sir B. Rafol, Alexander Soibel, Arezou Khoskhlagh, David Z.-Y. Ting, John K. Liu, Jason M. Mumolo, Sarath D. Gunapala “320 x 256 complementary barrier infrared detector focal plane array for long-wave infrared imaging”, Proc. SPIE. 8353, Infrared Technology and Applications XXXVIII 835331 (May 1, 2012) doi: 10.1117/12.920494

 

 

 

 

 

           2011

 

· S. C. Lee, S. Krishna, and S. R. J. Brueck, Plasmonic-Enhanced Photodetectors for Focal Plane Arrays”,  IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 23, NO. 14,  pp935 JULY 15, (2011)

· A. V. BARVE, Y. D. SHARMA, J. MONTOYA, J. SHAO, T. VANDERVELDE, T. ROTTER and S. KRISHNA , “ENGINEERING THE BARRIER OF QUANTUM DOTS-IN-A-WELL (DWELL) INFRARED PHOTODETECTORS FOR HIGH TEMPERATURE OPERATION”, International Journal of High Speed Electronics and Systems Vol. 20, No. 3,pp- 549–555(2011)

· K. Takei, H. Fang, S. B. Kumar, R. Kapadia, Q. Gao, M. Madsen, H. S. Kim, C.-H. Liu, Y.-L. Chueh, E. Plis, S. Krishna, H. A. Bechtel, J. Guo, A. Javey. "Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes", Nano Letters, 11, 5008–5012, 2011

· A. V. Barve, S. Sengupta, J. O. Kim, Y. D. Sharma, S. Adhikary, T. J. Rotter, S. J. Lee, Y. H. Kim, and S. Krishna, “Confinement enhancing barriers for high performance quantum dots-in-a-well infrared detectors”, Appl. Phys. Lett. 99, 191110 (2011)

· Woo-Yong Jang,  Majeed M. Hayat,  Sebastián E. Godoy,  Steven C. Bender, Payman Zarkesh-Ha and Sanjay Krishna,  “Data compressive paradigm for multispectral sensing using tunable DWELL mid-infrared  detectors”,  OPTICS EXPRESS  Vol. 19, No. 20, pp- 19454 ( 2011)

· Kuniharu Takei,Steven Chuang, Hui Fang, Rehan Kapadia, Chin-Hung Liu,Junghyo Nah, Ha Sul Kim, E. Plis,  Sanjay Krishna, Yu-Lun Chueh, and Ali Javey “Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness “, APPLIED PHYSICS LETTERS 99, 103507 (2011)

· Jonathan R. Andrews, Sergio R. Restaino, Scott W. Teare, Yagya D. Sharma, Woo-Yong Jang, Thomas E. Vandervelde, Jay S. Brown, Axel Reisinger, Mani Sundaram, Sanjay Krishna, and Luke Lester, “Comparison of Quantum Dots-in-a-Double-Well and Quantum Dots-in-a-Well Focal Plane Arrays in the Long-Wave Infrared” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 7, JULY 2011

· Ajit V. Barve,John Montaya,Yagya Sharma,Thomas Rotter, Jiayi Shao, Woo-Yong Jang,Srujan Meesala, Sang Jun Lee, Sanjay Krishna, “High temperature operation of quantum dots-in-a-well infrared photodetectors”  Infrared Physics & Technology 54,  PP-215–219(2011)

· Sang Jun Lee, Zahyun Ku, Ajit Barve, John Montoya, Woo-Yong Jang, S.R.J. Brueck, Mani Sundaram, Axel Reisinger, Sanjay Krishna & Sam Kyu Noh“A monolithically integrated plasmonic infrared quantum dot camera”, Nature Communications 2: 286 April 2011

· E. A. Plis,S. S. Krishna, N. Gautam, S. Myers, and S. Krishna, “Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture”,  IEEE Photonics Journal Vol. 3, No. 2,  PP:234-240, April 2011

· Biliana S. Paskaleva, Woo-Yong Jang, , Steven C. Bender,Yagya D. Sharma, Sanjay Krishna, and Majeed M. Hayat, “Multispectral Classification With Bias-Tunable Quantum Dots-in-a-Well Focal Plane Arrays”,   IEEE SENSORS JOURNAL, VOL. 11, NO. 6, JUNE 2011

· Jiayi Shao. Thomas E. Vandervelde, Ajit Barve, Woo-Yong Jang, Andreas Stintz, and Sanjay Krishna, Enhanced normal incidence photocurrent in quantum dot infrared Photodetectors”, J. Vac. Sci. Technol. B 293, May/Jun 2011

· Peter Vines,  Chee Hing Tan, John P. R. David, Ram S. Attaluri, Thomas Edwin Vandervelde,  and Sanjay Krishna, “Noise, Gain, and Responsivity in Low-Strain Quantum Dot Infrared Photodetectors with up to 80 Dot-in-a-Well Periods”,  IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 47, NO. 5, MAY (2011)

· N. Gautam, M. Naydenkov, S. Myers, A. V. Barve, E. Plis, T. Rotter, L. R. Dawson, and S. Krishna, Three color infrared detector using InAs/GaSb superlattices with unipolar barriers”, Appl. Phys. Lett. 98, 121106 (2011)

· Alexandra C. Ford, Chun Wing Yeung, Steven Chuang, Ha Sul Kim, Elena Plis, Sanjay Krishna, Chenming Hu, and Ali Javey,  Ultrathin body InAs tunneling field-effect transistors on Si substrates”,Appl. Phys. Lett. 98, 113105 (2011)

· Hui Fang, Morten Madsen, Carlo Carraro, Kuniharu Takei,Ha Sul Kim, Elena Plis, Szu-Ying Chen, Sanjay Krishna, Yu-Lun Chueh, Roya Maboudian, and Ali Javey,   Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator”, APPLIED PHYSICS LETTERS 98, 012111(2011)

· B Klein, E Plis, M N Kutty, N Gautam, A Albrecht, S Myers and S Krishna,  Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors”, J. Phys. D: Appl. Phys. 44 075102(2011)

· Peter Vines,  Chee Hing Tan, John P. R. David,  Ram S. Attaluri, Thomas E. Vandervelde, Sanjay Krishna,  Woo-Yong Jang, and Majeed M. Hayat, “Versatile Spectral Imaging with an Algorithm-Based Spectrometer Using Highly Tuneable Quantum Dot Infrared Photodetectors”, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 47, NO. 2, FEBRUARY(2011)

Conference Papers

 

· Maya Narayanan Kutty, E. Plis, S. Myers, S. Smolev, B. Klein, M. Naydenkov, N. Gautam, L.R.Dawson, W.Wang, C. Chen and J. Phillips, P. Pinsukanjana and S. Krishna "Improved Performance of Long-Wave Infrared InAs/GaSb based Superlattice detectors by novel Etching and Passivation Techniques"  Electronic Material Conference (EMC) in June 22-24,2011 at Santa Barbara CA.

· J.O. Kim, Ajit V. Barve , Jiayi Shao, Yagya Sharma, Saumya Sengupta and Sanjay Krishna Growth and Characterization of Sub-Monolayer InAs/GaAs Quantum Dot Infrared Photodetectors”, 28th NAMBE2011 ( August 14~17, San Diago)

· Ajit V. Barve, Jun Oh Kim, Yagya D. Sharma, Thomas Rotter, Saumya Sengupta, John Montoya, and Sanjay Krishna,Characterization of different transitions in quantum dots-in-a-well (DWELL) infrared photodetectors, Monday 25 April 2011 Orlando, Florida, USA Infrared Technology and Applications XXXVII Proc. SPIE 8012, 801241 (2011); 

· Ajit V. Barvea , Jun Oh Kima, Saumya Senguptab, Yagya D. Sharmaa, Jiayi Shaoa, SouravAdhikaryb, Thomas Rottera and Sanjay Krishna, “Quantum Dots-in-a-Well (DWELL) Infrared Photodetectors with Confinement Enhancing Barriers Photonics Conference (PHO), 2011 IEEE  9-13 Oct. 2011 pp: 95 – 96,  Arlington, VA(2011)

· Payman Zarkesh-Ha and David A. Ramirez, "A Novel LED/Detector Integrated Circuit," WSEAS Intern. Conferences. Playa Meloneras, Gran Canaria, Canary Islands, Spain, March 24-26, 2011.

· Jiawei Friedrich Xu, Glauco Rogerio Cugler Fiorante,  Payman Zarkesh-Ha, Sanjay Krishna,  A Readout Integrated Circuit with Hybrid Source/Sensor Array“ Photonics Conference (PHO), 2011 IEEE,  9-13 Oct. 2011,  Arlington, VA(2011)

· Nutan Gautam, Ajit V. Barve, Stephen Myers, Brianna Klein, , Elena Plis, Mikhail Naydenkov, Maya N. Kutty, Ted Schuler-Sandy and S. Krishna, “Polarization Selective Interband Transitions in Type-II InAs/GaSb Superlattices,Photonics Conference (PHO), 2011 IEEE  9-13 Oct. 2011,  Arlington, VA(2011)

· W-Y. Jang, M. M. Hayat, S.E. Godoy, P. Zarkesh-ha, S. C. Bender and S. Krishna, “Compressive Multispectral Sensing Algorithm with Tunable  Quantum Dots-in-a-Well Infrared Photodetectors,IEEE Photonics 2011  Conference (IPC11), October 9-13th, 2011.

· Plis, E., Gautam, N., Kutty, M.N., Myers, S., Klein, B., Schuler-Sandy, T., Naydenkov, M., and Krishna, S.: “Performance of long-wave infrared InAs/GaSb strained layer superlattice detectors for the space applications”, Proceedings of  SPIE, San Diego, California, USA  vol. 8164 p. 81640S (2011)

· Plis, E., Klein, B., Gautam, N., Myers, S., Kutty, M.N., Naydenkov, M., and Krishna, S.: “Performance optimization  of long-wave infrared detectors based on InAs/GaSb strained layer superlattices”, Proceedings of SPIE, vol. 8012 p.80120V (2011) ,Orlando, Florida, USA 

· Plis, E., Myers, S., Kutty, M.N., Mailfert, J., Smith, E. P., Johnson, S., and Krishna, S.: “Lateral diffusion of minority carriers in InAsSb-based nBn detectors”, Proceedings of SPIE, vol. 7945 p. 79451R (2011) , SFO, CA

· Plis, E., Krishna, S. S., Krishna, S., Gautam, N., Myers, S., Smith E. P., Johnson, S.: “High performance dual-band  InAs/GaSb SLS detectors with nBn and pBp architectures”, Proceedings of SPIE, vol. 8012 p. 80120X (2011) ,Orlando, Florida, USA 

·  Umana-Membreno G.A., Kala, H., Antoszewski, J., Dell J. M., Faraone, L., Klein, B., Gautam, N., Kutty, M. N., Plis, E., Krishna, S.: "Vertical transport in InAs/GaSb type-II strained layer superlattices for infrared focal plane array applications". Proceedings of SPIE, vol. 8012 p. 80120Y (2011),Orlando, Florida, USA  

·  Banerjee, K., Huang, J., Ghosh, S., Xu, R., Takoudis, C. G., Plis, E., and Krishna, S.: “Surface study of thioacetamide and zinc sulfide passivated long wavelength infrared type-II strained layer superlattice” Proceedings of SPIE, vol. 8012 p. 801243 (2011) ,Orlando, Florida, USA 

· S.Krishna, “Quantum dot focal plane array with plasmonic resonator”, Proc. SPIE 8095, 809506 (2011)

· Vincent M. Cowan, Christian P. Morath, Stephen Myers, Nutan Gautam, and Sanjay Krishna, “Low-temperature noise measurements of an InAs/GaSb-based nBn MWIR detector”,  Proc. SPIE 8012, 801210 (2011)

· Vincent M. Cowan, Christian P. Morath, Seth M. Swift, Stephen Myers, Nutan Gautam, and Sanjay Krishna, “Gamma-ray Irradiation Effects on InAs/GaSb-based nBn IR Detector”, Proc. SPIE 7945, 79451S (2011)

· Stephen Myers,Elena Plis,Chris Morath, Vincent Cowan, Nutan Gautam, Brianna Klein, Maya N. Kutty, Ted Schuler-Sandy, Mikhail Naydenkov, and Sanjay Krishna, “Comparison of superlattice based dual color nBn and pBp infrared detectors” Proc. SPIE 8155, 815507 (2011)

 

 

 

 

 

 

           2010

· E. Plis, M.N. Kutty, S. Myers, H.S. Kim, N. Gautam, L.R. Dawson, S. Krishna, “Passivation of Long-wave Infrared InAs/GaSb Strained Layer Superlattice detectors”, Infrared Physics & Technology(2010)

· Elena Plis, S. Myers, M. N. Kutty, J. Mailfert, E. P. Smith, S. Johnson, and S. Krishna, Lateral diffusion of minority carriers in InAsSb-based nBn detectors”, APPLIED PHYSICS LETTERS 97, 123503(2010)

· Banerjee, K.,  Ghosh, S., Plis, E., and Krishna, S.: “Study of Short- and Long-Term Effectiveness of Ammonium Sulfide as Surface Passivation for InAs/GaSb Superlattices Using X-Ray Photoelectron Spectroscopy”, Journal of Electronic Materials 39 (10), p. 2210 (2010)

· N. Gautam, H.S. Kim, S. Myers, E. Plis, M.N. Kutty, M. Naydenkov, B. Klein, L.R.Dawson, S. Krishna, “Heterojunction Bandgap Engineered Photodetector Based on Type-II InAs/GaSb Superlattice for Single Color and Bicolor Infrared Detection”, Infrared Physics & Technology (2010),

· David A. Ramirez, Jiayi Shao, Majeed M. Hayat, and Sanjay Krishna,  Midwave infrared quantum dot avalanche photodiode”, APPLIED PHYSICS LETTERS 97, 221106(2010)

· Hyunhyub Ko, Kuniharu Takei1, Rehan Kapadia, Steven Chuang, Hui Fang, Paul W. Leu1, Kartik Ganapathi, Elena Plis, Ha Sul Kim , Szu-Ying Chen, Morten Madsen,  Alexandra C. Ford, Yu-Lun Chueh, Sanjay Krishna , Sayeef Salahuddin & Ali Javey, “Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors”, N AT U R E,  VO L (468) ,  N O V E M B E R 2010

· H. S. Kim, E. Plis, N. Gautam, S. Myers, Y. Sharma, L. R. Dawson, and S.Krishna, Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation”,  APPLIED PHYSICS LETTERS 97, 143512 (2010)

· Jessie Rosenberg, Rajeev V. Shenoi, Sanjay Krishna, and Oskar Painter, “Design of plasmonic photonic crystal resonant cavities for polarization sensitive infrared photodetectors”, Optics Express, Vol. 18, Issue 4, pp. 3672-3686 (2010)

· M.N. KUTTY, E. PLIS,  A. KHOSHAKHLAGH,  S. MYERS, N. GAUTAM,1 S. SMOLEV,  Y. SHARMA, R. DAWSON, S. KRISHNA, S.J. LEE, and S.K. NOH,   “Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors”, Journal of ELECTRONIC MATERIALS DOI: 10.1007/s11664-010-1242(2010)

· Ajit V. Barve, Thomas Rotter, Yagya Sharma, Sang Jun Lee, Sam Kyu Noh, and Sanjay Krishna,  Systematic study of different transitions in high operating temperature quantum dots in a well photodetectors”, Appl. Phys. Lett. 97, 061105 (2010)

· A. Khoshakhlagh, F. Jaeckel C. Hains J. B. Rodriguez  L. R. Dawson, K. Malloy, and S. Krishna, Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate”,  APPLIED PHYSICS LETTERS 97, 051109(2010)

· E Plis, J B Rodriguez, G Balakrishnan, Y  Sharma, H S Kim, T Rotter and S Krishna, Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate”, Semicond. Sci. Technol. 25, 085010(2010)

· S. C. Lee, S. Krishna, and S. R. J. Brueck, "Light direction-dependent plasmonic enhancement in quantum dot infrared photodetectors," Applied Physics Letters Vol.97(2), 021112(2010) 

· N. Gautam, H. S. Kim, M. N. Kutty,E. Plis, L. R. Dawson, and S. Krishna, Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers”, Appl. Phys. Lett. 96, 231107 (2010)

· Ajit Barve, Jiayi Shao, Yagya D. Sharma, Thomas E. Vandervelde, Krit Sankalp, Sang Jun Lee, Sam Kyu Noh, and Sanjay Krishna, Resonant Tunneling Barriers in uantum Dots-in-a-Well Infrared Photodetectors”, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 46(7), JULY , 1105(2010)

· Rajeev V. Shenoi, Jessie Rosenberg, Thomas E. Vandervelde, Oskar J. Painter, and Sanjay Krishna, “Multispectral Quantum Dots-in-a-Well Infrared Detectors Using Plasmon Assisted Cavities”, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 46(7), JULY 1051(2010)

· Chun-Chieh Chang, Yagya D. Sharma, Yong-Sung Kim, Jim A. Bur, Rajeev V. Shenoi, Sanjay Krishna, Danhong Huang, and Shawn-Yu Lin, A Surface Plasmon Enhanced Infrared Photodetector Based on InAs Quantum Dots”, Nano Lett. 10, 1704–1709(2010,)

· E. Plis, A. Khoshakhlagh, S. Myers, H. S. Kim, N. Gautam, Y. D. Sharma, and S. Krishna S. J. Lee and S. K. Noh “ Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection”, J. Vac. Sci. Technol. B 28 (3) , May/Jun 2010

· Yagya D. Sharma, M. N. Kutty, R. V. Shenoi, Ajit V. Barve, S. Myers, J. Shao, E. Plis, S. Lee, S. Noh, and S. Krishna, Investigation of multistack InAs/InGaAs/GaAs self-assembled quantum dots-in-double-well structures for infrared detectors”,J. Vac. Sci. Technol. B 28 (3) , May/Jun 2010

· H. S. Kim, E. Plis, A. Khoshakhlagh, S. Myers, N. Gautam, Y. D. Sharma,L.R. Dawson, S. Krishna, S. J. Lee, and S. K. Noh, Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation”, APPLIED PHYSICS LETTERS 96, 033502(2010)

· R. P. Prasankumar, W. W. Chow,J. Urayama, R. S. Attaluri, R. V. Shenoi, S. Krishna, and A. J. Taylor, “Density-dependent carrier dynamics in a quantum dots-in-a-well  Heterostructure”, APPLIED PHYSICS LETTERS 96, 031110(2010)“

· Arezou Khoshakhlagh, Stephen Myers, HaSul Kim, Elena Plis, Nutan Gautam, Sang Jun Lee, Sam Kyo Noh, L. Ralph Dawson, and Sanjay Krishna, Long-Wave InAs/GaSb Superlattice Detectors Based on nBn and Pin Designs”, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 46, NO. 6, JUNE 2010 959

 

 

 

Conference Papers

 

· Tan, S. L., Goh, Y. L., dip Das, S., Zhang, S., Tan, C. H., David, J. P. R.,  Gautam, N., Kim, H. S., Plis, E., and Krishna, S.: “Dry etching and surface passivation techniques for type-II InAs/GaSb superlattice infrared detectors”, Proceedings of SPIE vol. 7838 (2010)

· Ghosh, S., Banerjee, K., Duan, Q., Grein, C. H., Plis, E. A., Krishna, S., Hayat, M. M.: “Dual-carrier multiplication high-gain MWIR strain layer superlattice impact ionization engineered avalanche photodiodes”. Proceedings of SPIE, vol. 7660, pp. 76601W-76601W-6 (2010).

· Cowan, V. M., Morath. C. P.,  Swift, S. M., LeVan P. D., Myers. S., Plis. E., and  Krishna, S.: Electrical and Optical Characterization of InAs/GaSb-based nBn IR DetectorProceedings of SPIE, vol. 7780 (2010)

· Wong, A. F., Nelson, M. J., Plis, E. A., Skrutskie, M. F., Yao, L.,Vandervelde, T., Kim, H. S., Khoshakhlagh, A., Myers, S. A., and Krishna, S.: “Characterization of multicolor type-II InAs/GaSb strained-layer superlattice photodetectors for use in astronomical observation”. Proceedings of SPIE, vol. 7742 (2010)

· N. Gautam, E. Plis, H.S. Kim, M. N. Kutty, S. Myers, A. Khoshakhlagh, L. R. Dawson and S. Krishna, Heterostructure Band Engineering of Type-II InAs/GaSb Superlattice based Longwave Infrared Photodiodes using Unipolar Current Blocking Barriers”, Infrared Technology and Applications XXXVI, Proc. of  SPIE Defense, Security, and Sensing (5 April 2010, orlando,FL,USA)  Vol. 7660( 2010)

· Sanjay Krishna, “Multimodal sensing with nanoscale quantum dots and type-II superlattices  (Invited Paper) Micro- and Nanotechnology Sensors, Systems, and Applications II  Conference 7679 - Proceedings of SPIE Volume 7679 (Accepted)

· Peter Vines, Chee Hing Tan, John P. R. David,  Ram S. Attaluri, Thomas E. Vandervelde, Sanjay Krishna, Woo Yong Jang, Majeed M. Hayat, “Quantum dot infrared photodetectors with highly tunable spectral response for an algorithm-based spectrometer”,  Infrared Technology and Applications XXXVI Conference 7660 - Proceedings of SPIE Volume 7660(Accepted)

· Ha Sul Kim, Elena A. Plis, Arezou Khoshakhlagh, Stephen Myers, Nutan Gautam, Yagya Sharma, L. Ralph Dawson, Sanjay Krishna, “SU-8 passivation of type-II InAs/GaSb strained layer superlattice detectors”,  Infrared Technology and Applications XXXVI Conference 7660 - Proceedings of SPIE Volume 7660(Accepted)

· Siddhartha Ghosh, Koushik Banerjee, Qing Duan, Christoph H. Grein, Elena A. Plis, Sanjay Krishna, Majeed M. Hayat, “Dual-carrier multiplication high-gain MWIR strain layer superlattice impact ionization engineered avalanche photodiodes for linear mode photon counting applications”,  Infrared Technology and Applications XXXVI Conference 7660 - Proceedings of SPIE Volume 7660(Accepted)

· Arezou Khoshakhlagh, Nutan Gautam, Hasul Kim, Stephen Myers, Elena A. Plis, Edward P. Smith, David R. Rhiger, Raytheon Co. Sanjay Krishna, “Mid-wavelength InAsSb detectors based on nBn design”,  Infrared Technology and Applications XXXVI Conference 7660 - Proceedings of SPIE Volume 7660(Accepted)John A. Montoya, Rajeev V. Shenoi, Yagya Sharma, Jiayi Shao, Ajit V. Barve, Hasul Kim, Sanjay Krishna, “Integration of multispectral infrared quantum dots-in-a-well photodetectors into focal plane arrays”,  Infrared Technology and Applications XXXVI Conference 7660 - Proceedings of SPIE Volume 7660(Accepted)

· Jiayi Shao, Thomas E. Vandervelde, Woo-yong Jang, Andreas Stintz, and S.Krishna, “Improving the operating temperature of quantum dots in a well detectors  (Invited Paper)” Quantum Sensing and Nanophotonic Devices VII - Proc. of SPIE Vol. 7608 76081Y-1-7

 

 

           2009

· S. C. Lee, S. Krishna and S. R. J. Brueck, “Quantum Dot Infrared Photodetector Enhanced by Surface Plasma Wave Excitation”, Optics Exp. 17, 23161 (2009).

· Ajit V. Barve, Sang Jun Lee, Sam Kyu Noh, and Sanjay Krishna,Review of current progress in quantum dot infrared photodetectors, Laser & Photon. Rev., 1–13 (2009)

· Jessie Rosenberg, Rajeev V. Shenoi, Thomas E. Vandervelde, Sanjay Krishna, and Oskar Painter1, “A multispectral and polarization-selective surface-plasmon resonant  midinfrared detector”, APPLIED PHYSICS LETTERS 95, 161101 (2009)

· S. J. Lee, S. K. Noh, E. Plis,  S. Krishna, and K.-S. Lee, “Subband transitions in dual-band n-B-n InAs/GaSb superlattice infrared photodetector identified by photoresponse spectra”, APPLIED PHYSICS LETTERS 95, 102106(2009)

· Elena Plis , Stephen Myers, Arezou Khoshakhlagh, Ha Sul Kim, Yagya Sharma, Nutan Gautam, Ralph Dawson, Sanjay Krishna, "InAs/GaSb strained layer superlattice detectors with nBn design", Infrared Physics & Technology 52, 335–339(2009)

· Jonathan Andrews, Woo-Yong Jang, Jorge E. Pezoa, Yagya D. Sharma, Sang Jun Lee,Sam Kyu Noh, Majeed M. Hayat, Sergio Restaino, Scott W. Teare, Sanjay Krishna, “Demonstration of a bias tunable quantum dots-in-a-well focal plane array”, Infrared Physics & Technology 52, (2009)

· Sanjay Krishna, “The infrared retina”, J. Phys. D: Appl. Phys. 42, 234005(2009)

· Stephen Myers, Elena Plis, Arezou Khoshakhlagh, Ha Sul Kim, Yagya Sharma, Ralph Dawson, Sanjay Krishna, and Aaron Gin, “The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors”, APPLIED PHYSICS LETTERS 95, 121110(2009)

· S.C. Lee, E. Plis, S. Krishna and S.R.J. Brueck, Mid-infrared transmission enhancement  through sub-wavelength metal hole array using impedance-matching dielectric layer”, ELECTRONICS LETTERS Vol. 45 No. 12, 4th June (2009)

· K. Banerjee, S. Ghosh,S. Mallick, E. Plis, S. Krishna,and C. Grein, “Midwave infrared InAs/GaSb strained layer superlattice hole avalanche Photodiode”, APPLIED PHYSICS LETTERS”, 94, 201107,(2009)

· Woo-Yong Jang, Majeed M. Hayat, J. Scott Tyo, Ram S. Attaluri, Thomas E. Vandervelde, Yagya  Sharma, Rajeev Shenoi,Andreas Stintz, Elizabeth R. Cantwell, Steven C. Bender, Sang Jun Lee, Sam Kyu Noh, and Sanjay Krishna, “Demonstration of Bias-Controlled Algorithmic Tuning of Quantum Dots in a Well (DWELL) MidIR Detectors”, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 45, NO. 6, JUNE 2009

· Khoshakhlagh, E. Plis, S. Myers, Y. Sharma, L.R. Dawson, S. Krishna, "Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (~8 µm)infrared detection", Journal of Crystal Growth 311 1901–1904, (2009)

· J. R. Andrews,S. R. Restaino, T. E. Vandervelde, J. S. Brown, Y. Sharma, S. Lee, S. W. Teare,  A. Reisinger,M. Sundaram, and S. Krishna, "Comparison of Long-Wave Infrared Quantum-Dots-in-a-Well and Quantum-Well Focal Plane Arrays", IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 56, NO. 3, MARCH (2009)

· A. Alizadeh, D. Hays, S. T. Taylor, C. Keimel, K. R. Conway,L. Denault, K. Krishnan, V. H. Watkins, R. Neander,J.S. Brown, A. Stintz, S. Krishna, M. Blumin, I. Saveliev,H. E. Ruda, E. Braunstein, and C. Jones,“Epitaxial growth of 20 nm InAs and GaAs quantum dots on GaAs through block copolymer templated SiO2 masks” JOURNAL OF APPLIED PHYSICS 105, 054305(2009)

                                                                                                                                                                                                                                                                                                                                       

Conference Papers

· Stephen Myers, Elena Plis, Ha Sul Kim, Arezou Khoshakhlagh, Nutan Gautum, Sang Jun Lee, Sam Kyu Noh, and Sanjay Krishna,"Heterostructure Engineering in Type II InAs/GaSb Strained Layer Superlatties", International Symposium of Compound Semiconductors(ISCS), September 1st, 2009

· Y. Sharma, M.Kutty, R.Shenoi, S.Myers, J.Shao, E.Plis, S. Lee1, S.Noh1, and, S.Krishna,Investigation of Multi-Stack Quantum Dots-in–a-Double Well (DDWELL) Infrared Detectors”, 26th North American Molecular Beam Epitaxy Conference Princeton University August 9-12, 2009

· E. Plis, S. Myers, H.S Kim, A. Khoshakhlagh, N. Gautam, Y. D. Sharma and S. Krishna, S. J. Lee, S. K. Noh, MBE Growth and Characterization of Type-II InAs/GaSb Strained Layer Superlattices for Long-Infrared Detection”, 26th North American Molecular Beam Epitaxy Conference Princeton University August 9-12, 2009

· R. V. Shenoi, J. Rosenberg, T. E. Vandervelde, O. J. Painter, and S. Krishna, “Multispectral infrared detection using plasmon-assisted cavities”  SPIE Defense, Security, and Sensing 2009,   Infrared Technology and Applications XXXV Proc. SPIE Vol. 7298, 729808 (May. 7, 2009)

· Elena Plis, Stephen Myers, Ha Sul Kim, Nutan Gautam, Arezou Khoshakhlagh, Ralph Dawson and Sanjay Krishna, InAs/GaSb Strained Layer Superlattice detectors with nBn Design”, International Conference on quantum structure based infrared photodetector (QSIP),(2009)

· Woo-Yong Jang, Jorge E. Pezoa, Yagya D. Sharma, Sang Jun Lee, Sam Kyu Noh, Majeed M. Hayat, and Sanjay Krishna, Demonstration of a Bias Tunable Quantum Dots in a Well Focal Plane Array”, International Conference on quantum structure based infrared photodetector (QSIP),(2009)

 

              2008

· V. Gopal E. Plis, J.-B. Rodriguez, C. E. Jones, L. Faraone,  and S. Krishna, “Modeling of electrical characteristics of midwave type II InAs/GaSb strain  layer superlattice diodes”, JOURNAL OF APPLIED PHYSICS 104, 124506, (2008)

· A Barve, S Shah, J Shao, T Vandervelde, R Shenoi, W Jang, and S Krishna, "Reduction in dark current using resonant tunneling barriers in quantum dots-in-a-well long wavelength infrared photodetector"Applied Physics Letters 93, 131115 (2008)

· S. Jit, A. Bandara Weerasekara, R. C. Jayasinghe, S. G. Matsik, A. G. Unil Perera, M. Buchanan, G. Irwin Sproule, H. C. Liu, A. Stintz, S. Krishna, S. P. Khanna, M. Lachab, and E. H. Linfield, “Dopant Migration-Induced Interface Dipole Effect in n-Doped GaAs/AlGaAs Terahertz Detectors”,  IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 10, OCTOBER 2008

· E. Plis, H. S. Kim, G. Bishop, S. Krishna, K. Banerjee, and S. Ghosh, ”Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors”Appl. Phys. Lett. 93, 123507 (2008)

· P. Martyniuk, S. Krishna, and A. Rogalski, “Assessment of quantum dot infrared photodetectors for high temperature  Operation”, JOURNAL OF APPLIED PHYSICS 104, 034314 (2008)

· T. Vandervelde, M.Lenz, E. Varley, A. Barve, J. Shao, R.V. Shenoi, D. Ramirez, W.Jang, Y.Sharma,and Sanjay Krishna, Quantum Dots-in-a-Well Focal Plane Arrays” IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 14, NO. 4, JULY/AUGUST (2008)

· H.S. Kim, E. Plis, J.B. Rodriguez, G. Bishop, Y.D. Sharma and S. Krishna"N-type ohmic contact on type-II InAs/GaSb strained layer superlattices", ELECTRONICS LETTERS  Vol. 44 No. 14 (2008)

· R. V. Shenoi,  R. S. Attaluri, A. Siroya, J. Shao, Y. D. Sharma, A. Stintz, T. E. Vandervelde, and S. Krishna,“Low-strain InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetector”, J. Vac. Sci. Technol. B 26(3) PP-1136-1139 May/Jun (2008)

· G. Bishop, E. Plis,a_ J. B. Rodriguez, Y. D. Sharma, H. S. Kim, L. R. Dawson, and S. Krishna, "nBn detectors based on InAs/GaSb type-II strain layer superlattice”,  J. Vac. Sci. Technol. B 26(3) PP-1145-1148 May/Jun (2008)

· T. V. Chandrasekhar Rao and J. Antoszewski J. B. Rodriguez, E. Plis, S. Krishna And L. Faraone,“Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice”, J. Vac. Sci. Technol. B 26(3) PP1081-1083, May/Jun (2008)

· H. S. Kim, E. Plis, J. B. Rodriguez, G. D. Bishop, Y. D. Sharma, L. R. Dawson, S. Krishna, J. Bundas, R. Cook, D. Burrows, R. Dennis, K. Patnaude, A. Reisinger, and M. Sundaram, "Mid-IR focal plane array based on type-II InAs/GaSb strain layer superlattice detector with nBn design” Appl. Phys. Lett. 92, 183502 (2008)

· Ahmed I. Lobad, E. A. Pease, R. Dawson, Sanjay Krishna, and L. A. Vern Schlie, “Extraction of radiative and nonradiative rates in Sb based midwave infrared lasers using a novel approach”, REVIEW OF SCIENTIFIC INSTRUMENTS 79, PP-033904(2008)

· R. P. Prasankumar, R. S. Attaluri, R. D. Averitt, J. Urayama, N. Weisse- Bernstein, P. Rotella, A. D. Stintz, S. Krishna, and A. J. Taylor, “Ultrafast carrier dynamics in an InAs/InGaAs  quantum dots-in-a-well heterostructure”,  Vol. 16, No. 2 pp. 1165 OPTICS EXPRESS (2008)

· T. V. Chandrasekhar Rao,a_ J. Antoszewski, and L. Faraone,J. B. Rodriguez, E. Plis, and S. Krishna,“Characterization of carriers in GaSb/InAs superlattice grown on conductive GaSb substrate”, APPLIED PHYSICS LETTERS 92, 012121 (2008)

                                                                                                       

                                                                                                                     Conference Paper

· S. Krishna, E. Plis, H. Kim, G. Bishop, A. Khoshakhlagh, Y. Sharma, R. Dawson, A. Reisinger, and M. Sundaram, “Type-II strain layer superlattice focal plane arrays using an nBn design” 9 th International Conference on  Mid-Infrared Optoelectronics: Materials and Devices 7 th - 11 th September 2008, Freiburg, Germany

· S. Krishna, Mid Infrared Focal Plane Arrays with Nanoscale Quantum Dots and Superlattices” ,   8th IEEE Conference on Nanotechnology, 2008.

· Elena Plis, Ha Sul Kim, Greg Bishop, Jean-Baptiste Rodriguez, Arezou Khoshakhlagh, YagyaSharma, Paul Rotella, Ralph  Dawson Sanjay Krishna, Axel  Reisinger, Mani Sundaram ,”Mid-Wave Infrared nBn InAs/GaSb Strained Layer Superlattice Detectors Grown by  Molecular Beam Epitaxy”, 15th International Conference on Molecular Beam Epitaxy, 3-8 August 2008

· J. Shao, T. Vandervelde, W. Jang, A. Stintz, and S. Krishna, “High Operating Temperature InAs Quantum Dot Infrared Photodetector via Selective Capping Techniques” ,  8th IEEE Conference on Nanotechnology, 2008.

· R.Shenoi, J. Hou, Y. Sharma, J. Shao, T.Vandervelde, and S. Krishna, “Low strain Quantum Dots in a Double Well Infrared Detectors” , Infrared Spaceborne Remote Sensing and Instrumentation XVI SPIE 7082   SPIE 7082, 708207 (2008)

· J. Andrews, S. Restaino, S. Teare, S. Krishna, L. Lester, C. Wilcox, Ty Martinez, and F. Santiago, “Precision radiometry using a tunable InAs/InGaAs quantum dot in a well infrared focal plane array”Infrared Spaceborne Remote Sensing and Instrumentation XVI Proc. SPIE 7082, 70820T (2008)

· Thomas E. Vandervelde, Michael C. Lenz II, Eric Varley, Ajit Barve, Jiayi Shao, Rajeev Shenoi, David A. Ramirez, Wooyong Jang, Yagya  Sharma, and Sanjay Krishna, “Multicolor quantum dots-in-a-well focal plane arrays” Infrared Technology and Applications XXXIV Proc. SPIE Vol.(6940) , PP694003 (Apr. 10, 2008)

· E. Plis, J-B Rodriguez, G. Bishop, H. Kim, A. Khoshakhlagh, Y. Sharma, R. L. Dawson,and S.Krishna,Reduction of leakage currents in nBn-based long-wave infrared detectors using type-II InAs/GaSb superlattices(6940-11)”,Infrared Technology and Applications XXXIV Proc.  SPIE Vol.(6940) 2008, (Apr. 10, 2008)

         2007

· A. Khoshakhlagh, J. B. Rodriguez, E. Plis, G. D. Bishop, Y. D. Sharma, H. S. Kim, L. R. Dawson, and S. Krishna, “Bias dependent dual band response from InAs/Ga„In…Sb type II strain layer superlattice detectors”, APPLIED PHYSICS LETTERS 91, 263504(2007)

· S. Mallick, K. Banerjee, S. Ghosh,E. Plis, J.B.Rodriguez, S. Krishna, and C. Grein, “Ultralow noise midwave infrared InAs–GaSb strain layer superlattice avalanche photodiode” , APPLIED PHYSICS LETTERS 91, 241111 (2007)

· S. Mallick, K. Banerjee, S. Ghosh, J. B. Rodriguez, and S. Krishna, “Midwavelength Infrared Avalanche Photodiode Using InAs–GaSb Strain Layer Superlattice”, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 19, NO. 22, NOVEMBER 15(2007)

· E. Plis, J. B. Rodriguez, H. S. Kim, G. Bishop, Y. Sharma,  R. Dawson, S.J.Lee, C.E.Jones, V. Gopal.and S. Krishna, "Type II InAs/GaSb strain layer superlattice detectors with p-on-n polarity", APPLIED PHYSICS LETTERS 91, 133512 (2007)

· K Srinivasana, O Painter, A Stintz and S Krishna, , "Single quantum dot spectroscopy using a fiber taper waveguide near-field optic", APPLIED PHYSICS LETTERS 91, 091102(2007)

· E. Varley, M. Lenz, S. J. Lee, J. S. Brown, D. A. Ramirez, A. Stintz, and S. Krishna, Axel Reisinger and Mani Sundaram, “Single bump,two-color quantum dot camera”, APPLIED PHYSICS LETTERS 91, 081120(2007)

· A.B. Weerasekara, M.B.M. Rinzan, S.G. Matsik, A.G.U. Perera, M. Buchanan, H.C. Liu, G. von Winckel, A. Stintz and S. Krishna, Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity”Infrared Physics & Technology, 50,194-198 (2007)

· P.V.V.   Jayaweera, S.G. Matsik, K. Tennakone, A.G.U. Perera, H.C. Liu and S. Krishna,"Spin split-off transition based IR detectors operating at high temperatures"  Infrared Physics & Technology, 50, 279-283 (2007)

· J Rodriguez, E Plis, G Bishop, Y Sharma, H Kim, L Dawson and S Krishna, "nBn structure based on InAs/GaSb type-II strained layer superlattices"APPLIED PHYSICS LETTERS 91, 043514(2007)

· A. B. Weerasekara, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera, M. Buchanan, H. C. Liu, G. von Winckel, A. Stintz, and S. Krishna  "n-type GaAs/AlGaAs Heterostructure detector with a 3.2 threshold frequency”Optics Letters, 32 (10), 1335-1337, (2007)

· S Gunapala, S Bandara, C Hill, D Ting, J Liu, Sir B Rafol, E Blazejewski, J Mumolo, S Keo, S Krishna, Y Chang and C Shott, "Demonstration of 640x512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array”, Infrared Physics & Technology 50, pp-149-155(2007)

· R Attaluriand, S Krishna, M Matthews, R Steed, M Frogley and C Phillips, "Transient photoconductivity measurements of carrier lifetimes in an InAs/In0.15Ga0.85As dots-in-a-well detector"Applied Physics Letters 90, 103519(2007)

· S Gunapala, S Bandara, C Hill, D Ting, J Liu, Sir B Rafol, E Blazejewski, J Mumolo, S Keo, S Krishna, Y Chang and C Shott, "640x512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array", IEEE Journal of Quantum Electronics, Vol 43, No 3, March(2007)

· R. S. Attaluri, J. Shao, K. T. Posani, S. J. Lee, J. S. Brown, A. Stintz, and S. Krishna "Resonant cavity enhanced InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetector" J. Vac. Sci. Technol. B 25, 1186 (2007)

Conference Papers

· T.E. Vandervelde, J. Shao, A. Stintz, and S. Krishna, "Investigation of Shape Engineering in InAs Quantum Dots Using Various Capping Materials", MRS Fall Meeting 2007, Boston, MA

· Y. Sharma, G.Bishop, H.S. Kim, J.B. Rodriguez, E. Plis, G. Balakrishnan, L.R. Dawson, D.L. Huffaker and S. Krishna, “Type II Strain Layer Superlattices (SLS’s) grown on GaAs Substrates”,  The 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2007. LEOS 2007.

· H. S. Kim, G. D. Bishop, J. B. Rodriguez, Y. Sharma, E. Plis, L. R. Dawson, and S. Krishna, “Suppressed Surface Leakage Current Using nBn Infrared Detector Based on Type II InAs/GaSb Strain Layer Superlattices”, The 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2007. LEOS 2007.

· R. V. Shenoi D. A. Ramirez, Y. Sharma, R. S. Attaluri, J. Rosenberg, O. J. Painter, and S. Krishna, “Plasmon Assisted Photonic Crystal Quantum Dot Sensors”, Nanophotonics and Macrophotonics for Space Environments(6713) SPIE Optics Photonics SanDiego(2007)

· Mike Lenz, Eric Varley, David Ramirez, Jay  Brown, Sang Jun Lee, Andreas Stintz, Axel Reisinger and Mani Sundaram, and S.Krishna "Demonstration of a Two-Color 320 x 256 Quantum Dots-in-a-Well Focal Plane Array." Infrared Spaceborne Remote Sensing and Instrumentation XV(6678) SPIE oPTICS Photonics San Diego(2007)

· S.Krishna, "Multicolor Spectrally Adaptive Infrared Sensors Based on Nanoscale Quantum Dots" 7th IEEE International Conference on Nanotechnology Hong Kong (IEEE-NANO 2007)

· J.B.Rodrigues,E. Plis, S.J.Lee, H.Kim, G.Bishop, Y. Sharma, L.R.Dawson,S. Krishna, and C Jones,“Type-II  InAs/GaSb Strain Layer Superlattice Detectors for  Higher Operating Temperatures” SPIE Int. conference on Defense and Security Symposium 9-13 April 2007 OrlandoFlorida,  SPIE 6542, Bellingham, WA  (2007).

           2006

· S.Krishna,D.Forman,Annamalai,P.Dowd,P.Varangis,T.Tumolillo,A.Gray,J.Zilko,K.Sun,M.Liu,J.Cumbell and D.Carothers, “Two-color focal plane arrays based on self assembled quantum dots in a well heterostructure”, Phys.Stat Sol.(C)3,No.3(2006)

· Elena Plis,S.J.Lee Z.Zhu, A.Amtout and S.Krishna, "InAs/GaSb Superlattice Detectors Operating at Room Temperature", IEEE Journal of Selected Topics in Quantum Electronics vol.12,No.6 Nov./Dec.2006

· U. Sakoglu, M. M. Hayat, J. S. Tyo, P. Dowd, S. Annamalai, K. T. Posani, and S. Krishna, "A statistical method for adaptive sensing  using detectors with spectrally overlapping bands,"  Applied Optics, vol. 45(2006)

· B. Paskaleva, U. Sakoglu, Z. Wang, M. M. Hayat, J. S. Tyo, and S. Krishna, "Algorithmic tunability of quantum-dot infrared detectors,'' IEEE LEOS Newsletter, vol. 20, No. 5(2006).

· Z.M.Zhu,P.Bhattacharya,E.Plis ans S.Krishna, “Low Dark Current InAs/GaSb type-II Superlattice Infrared Photodetectors with resonant tunneling filters”,J.Phys.D:Appl.Phys.39(2006)

· E.Plis,J.B.Rodriguez,S.J.Lee and S.Krishna, “Electrochemical Sulphur passivation of InAs/GaSb SLS detectors”,  Electronics Letters Vol 42 No.21(2006)

· Elena Plis, S. Annamalai, K.T. Posani, Sanjay Krishna, R.A. Rupani, and S. Ghosh, Midwave infrared type-II InAs/GaSb superlattice detectors with mixed interfaces Journal of Applied Physics 100, 014510 (2006).

· Ram S. Attaluri, S. Annamalai, K.T. Posani, Andreas Stintz, and Sanjay Krishna, Influence of Si doping on the performance of quantum dots-in-well photodetectors, Journal of Vacuum Science and Technology. B, Microelectronics and nanometer structures, Vol. 24, no. 3, 1071 (2006).

· Wenjun Fan, S. Zhang, N.-C. Panoiu, A. Abdenour, Sanjay Krishna, R.M. Osgood, Jr., K.J. Malloy, and S.R.J. Brueck, Second Harmonic Generation from a Nanopatterned Isotropic Nonlinear Material, Nano Letters, Vol. 6, 1027, (2006)

· Ram S. Attaluri, S. Annamalai, K.T. Posani, Andreas Stintz, and Sanjay Krishna, Effects of Si doping on normal incidence InAs/In0.15Ga0.85As dots-in-well quantum dot infrared photodetectors , Journal of Applied Physics, Vol. 99, 083105 (2006).

· Kalyan T. Posani, V. Tripathi, S. Annamalai, N.R. Weisse-Bernstein, Sanjay Krishna, R. Perahia, O. Crisafulli, O.J. Painter, Nanoscale quantum dot infrared sensors with photonic crystal cavity, Applied Physics Letters, Vol. 88, 151104, (2006).

· G. Balakrishnan, S.H. Huang, A. Khoshakhlagh, A. Jallipalli, P. Rotella, A. Amtout, S. Krishna, C.P. Haines, L.R. Dawson, and D.L. Huffaker, Room-temperature optically-pumped GaSB quantum well based VCSEL monolithically grown on Si (100) substrate, Electronics Letters, Vol. 42, 350, (2006).

· Greg von Winckel, Sanjay Krishna, and E.A. Coutsias, Spectral element modelling of semiconductor heterostructures, Mathematical and Computer Modelling, Vol. 43, 582, (2006).

Conference Papers

· E. Plis, S. Annamalai, K. T. Posani, S. J. Lee, and S. Krishna, Room temperature operation of InAs/GaSb SLS infrared photovoltaic detectors with cut-off wavelength ~5 µm, ” SPIE Int. conference on Defense and Security Symposium OrlandoFlorida, Proc. SPIE Vol. 6206, 62060O (May. 17, 2006)

· Zhu, Zh., Plis, E., Amtout, A., Bhattacharya, P., Krishna, S, "Investigation of Surface Passivation in InAs/GaSb Strained- Layer-Superlattices Using Picosecond Excitation Correlation Measurement and Variable-Area Diode Array Surface Recombination Velocity Measurement", in Proc. Mater. Res. Soc. Symp., vol. 891, pp. 08.1-08.6 (2006)

· Rodriguez, J.B., Plis, E., Lee, S.J., Dawson, L.R., Krishna, S."Structural and Optical Characterization of InAs/GaSb nanoscale superlattices for mid-infrared detection", in Proc. of IEEE Nano, vol.1, pp.100-103 (2006)

           2005

· Kartik Srinivasan, Andreas Stintz, Sanjay Krishna, and Oskar Painter, Photoluminescence measurements of quantum-dot-containing semiconductor microdisk resonators using optical fiber taper waveguides, Physical Review B, Vol. 72, 205318, (2005).

· Sanjay Krishna, “InAs/InGaAs Quantum Dots in a Well Photodetectors”, Journal of Physics D (Applied Physics); 7 July 2005; vol.38, no.13, p.2142-50

· P. Hill, N. Weisse-Bernstein, L. R. Dawson, P. Dowd, and S. Krishna, “Activation energies for Te and Be in metamorphically grown AlSb and InxAl1–xSb layers”, Appl. Phys. Lett. 87, 092105 (2005)

· Kartik Srinivasan, Matthew Borselli, Thomas J. Johnson, Paul E. Barclay, Oskar Painter, Andreas Stintz and Sanjay Krishna “Optical loss and lasing characteristics of high-quality-factor AlGaAs microdisk resonators with embedded quantum dots”Applied Physics Letters, v.86, no.15, p.151106, 2005.

· S.Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J.Zilko, K. Sun, M. Liu, J. Campbell, D. Carothers “Demonstration of a 320 x 256 Two-Color Focal Plane Array Using InAs/InGaAs Quantum Dots in a Well Detectors”Appl. Phys. Lett, 86, 193501, 2005.

· Z. G. Hu, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera, G. Von Winckel, A. Stintz, and S. Krishna “Optical characterizations of heavily doped p-type AlxGa1–xAs and GaAs epitaxial films at terahertz frequencies’, J. Appl. Phys. 97, 093529 (2005)

· G. Balakrishnan, S.H. Huang, A. Khoshakhlagh, P. Hill, A. Amtout, S. Krishna, G.P. Donati, L.R. Dawson and D.L. Huffaker, “Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate”, IEE Electronics Letters, Vol. 41, No. 9, pg 531, 2005.

· Rinzan, MBM; Perera, AGU; Matsik, SG; Liu, HC; Buchanan, M; von Winckel, G; Stintz, A; Krishna, S “Terahertz absorption in AlGaAs films and detection using heterojunctions”, Infrared Physics & Technology;; v.47, no.1-2, p.188-194, Oct 2005

· Ariyawansa, G ; Perera, AGU ; Raghavan, GS ; von Winckel, G ; Stintz, A ; Krishna, S, “Effect of well width on three-color quantum dots-in-a-well infrared detectors” IEEE Photonics Technology Letters; vol.17, no.5, p.1064-6, May 2005

· Matsik, SG; Rinzan, MBM; Esaev, DG; Perera, AGU; von Winckel, G; Stintz, A; Krishna, S; Liu, HC; Byloos, MD; Oogarah, T; Sproule, GI ; Liu, K ; Buchanan, M., “Effect of doped substrate on GaAs-AlGaAs interfacial workfunction IR detector response through cavity effect” IEEE Transactions on Electron Devices; v.52, no.3, p.413-418, Mar 2005

· O. Kwon, J. Shao, M.M. Hayat and S. Krishna, “Theoretical Investigation of Quantum Dot Avalanche Photodiodes for Mid-Infrared Applications’, IEEE J. Quant. Electron., Dec 2005; v.41, no.12, p.1468-1473.

· G. von Winckel, E. A. Coutsias and S. Krishna, “Spectral Computation of Density-of-States and Intrasubband Photoabsorption in Quantum Wells’, Accepted in Journal of Mathemical and Computer Modeling

· Kartik Srinivasan, Andreas Stintz, Sanjay Krishna, and Oskar Painter” Photoluminescence measurement of quantum-dot-containing semiconductor microdisk resonators using optical fiber taper waveguides” Physical Review B 72, 205318 (2005)

           2004

· U. Sakoglu, J. S. Tyo, M. M. Hayat, S. Raghavan, and S. Krishna,” Spectrally adaptive infrared photodetectors using bias-tunable quantum dots” J. Opt. Soc. Am. B. Vol 21, p.7, Jan 2004.  

·  A. Amtout, S. Raghavan, P. Rotella , G. von Winckel, A. Stintz and S. Krishna “Theoretical Modeling And Experimental Characterization of InAs/InGaAs Quantum Dots In a Well Detector, Journal of Applied Physics, 96, 3782, October 2004.  

·  M. B. M. Rinzan, D. G. Esaev, A. G. U. Perera, S. G. Matsik, G. von Winckel, A. Stintz, and S. Krishna, “Free Carrier Absorption in Be-doped epitaxial AlGaAs thin films” Applied Physics Letters, 85, 5236, 2004.  

· S. Raghavan, D. Forman, P. Hill, N. W- Bernstein, G. von Winckel, P. Rotella, S. Krishna, S. W. Kennerly and J. W. Little, “Normal-Incidence InAs/InGaAs Quantum Dots-in-a-Well Detector Operating in the Long Wave Infrared Atmospheric Window, Journal of Applied Physics 96, 1036 (2004).  

·  P. Rotella, G. von Winckel, S. Raghavan, A. Stintz, Y. Jiang, and S. Krishna, “Study of structural and optical properties of quantum dots-in-a-well heterostructures”, J. Vac. Sci. Technol. B 22, 1512 (2004)   “Normal Incidence InAs/InGaAs Quantum dots in a Well Detectors Spanning the Long Wave Atmospheric Window”, Journal of the Korean Physical Society, Vol.45, S, 875, Dec 2004.  

·  L.A. Farina, K.M. Lewis, C. Kurdak, S. Ghosh, S. Krishna and P. Bhattacharya, “ Drag Coupling between a thin Al film and a two-dimensional electron gas near the superconducting transition”, Physica E 22, 341-344, 2004.

           2003

· E. Plis, P. Rotella, S. Raghavan, L. R. Dawson, S. Krishna, D. Le and C. P. Morath, “Growth of room-temperature ‘‘arsenic free’’ infrared photovoltaic detectors on GaSb substrate using metamorphic InAlSb digital alloy buffer layers” Appl. Phys. Lett., 82, 1658, 2003.  

· S. Raghavan, P. Rotella, A. Stintz, K.J. Malloy, S. Krishna, A.L Gray, “Structural and optical characterization of rapid thermally annealed InAs/In0.15Ga0.85As dots-in-well structure”, J. Cryst. Growth, 247, 269-274, 2003.  

· P. Rotella, S. Raghavan, A. Stintz, B. Fuchs, S. Krishna, C. Morath, D. Le and S.W. Kennerly, “Normal incidence InAs/InGaAs dots-in-well detectors with current blocking AlGaAs layer”, J. Cryst. Growth, 251/1-4 pp. 787-793, 2003.  

· S. Krishna, S. Raghavan, G von Winckel, P. Rotella, A. Stintz, , C. Morath, D. A. Cardimona, and S.W. Kennerly, “Two Color InAs/InGaAs Dots-in-a-Well Detector with Background Limited Performance at 91K”, Appl. Phys. Lett., 82, 2574, 2003.  

· B. Kochman, A.D. Stiff-Roberts, S. Chakrabarti, J.D. Phillips, S. Krishna, J. Singh and P. Bhattacharya, “ Absorption, Carrier Lifetime, and Gain in InAs-GaAs Quantum Dot Infrared Photodetectors’, IEEE. J. Quant. Electron., 39, 459, 2003.  

· S. Krishna, S. Raghavan, G von Winckel, A. Stintz, , G. Ariyawansa, S.G. Matsik and A.G.U. Perera, “Three-Color (lambda1 ~ 3.8 um, lambda2 ~ 8.5 um and lambda3 ~ 23.2 um) InAs/ InGaAs Quantum Dots In a Well Detector”, Appl. Phys. Lett., 83, 2745, October 2003.

           2002

·  S. Krishna, A. Stiff, P. Bhattacharya, and S. Kennerly “ Hot Dot Detectors”, IEEE Circuits and Devices, p.14, January 2002.  

·  K. M. Lewis, Ç. Kurdak, S. Krishna and P. Bhattacharya, “Charge transformer to enhance noise performance of single-electron transistor amplifiers in high-capacitance applications”, Appl. Phys. Lett.,80, 142, 2002.  

· X. Bai, Ç. Kurdak, S. Krishna, and P. Bhattacharya, “Quantum well based phonon detectors; performance analysis”, Physica B, 316-317, 362, 2002.  

·  S. Krishna, S. Raghavan, A.L. Gray, A. Stintz and K.J. Malloy, “Characterization of Rapid-Thermal-Annealed InAs/In0.13Ga0.87As DWELL Dots using X-Ray Diffraction and Photoluminescence”, Appl. Phys. Lett., Vol. 80, 3898, 2002.  

·  S. Raghavan, P. Rotella, A. Stintz, B. Fuchs, S. Krishna, C. Morath, D. A. Cardimona, and S.W. Kennerly, “High-Responsivity, Normal-Incidence Long-Wave

PUBLICATIONS