Group Leader: Luke F. Lester

Email:  luke at chtm dot unm dot edu

Phone: (505) 272-7805
FAX:    (505) 272-7801

Biography

Dr. Lester is a Professor in the Department of Electrical and Computer Engineering, the Microelectronics Endowed Chair Professor, General Chair of the Optical Science and Engineering Graduate Program, and Graduate Director of ECE. He received his B.S. in Engineering Physics in 1984 and his Ph.D. in Electrical Engineering in 1992 from Cornell University. Prior to his arrival at UNM in 1994, Dr. Lester worked as an engineer for 6 years at the General Electric Electronics Laboratory in Syracuse, New York where he developed high electron mobility transistors for mm-wave applications. Dr. Lester has over 20 years experience in III-V semiconductor materials and devices and was a co-Founder and Chief Technology Officer of Zia Laser, Inc., a startup company using quantum dot laser technology to develop products for communications and computer/microprocessor applications. As a senior 
member of the IEEE since 2000, he is an active organizer of Lasers and Electro-Optics Society (LEOS) conferences, workshops and journals. He was an US Air Force Summer Faculty Fellow in 2006 and 2007. Dr. Lester's other awards and honors include the 1998 UNM School of Engineering Research Award, the 1994 Martin Marietta Manager's Award, and the 2007 UNM ECE Teaching Award. He has published 85 journal articles and over 100 conference papers.

Most cited publications: H-index = 29 (as of 10/2008) *

1. (252) G. T. Liu, A. Stintz, H. Li, K.J. Malloy and L. F. Lester, "Extremely Low Room-Temperature Threshold Current Density Diode Lasers Using InAs Dots in an In_0.15Ga_0.85As Quantum Well", Electron. Lett., 35, 1163-65 (1999).  

   
   

2. (147) T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy and L. F. Lester, "Gain and Linewidth Enhancement Factor in InAs Quantum Dot Laser Diodes", IEEE Photon. Technol. Lett., 11, 1527-1529 (1999).  

   
   

3. (137) L. F. Lester, A Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs and K. J. Malloy, "Optical Characteristics of 1.24 µm InAs Quantum Dot Lasers Diodes", IEEE Photon. Technol. Lett., 11, 931-933 (1999).  

   
   

4. (134) R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy and L. F. Lester, "Room-temperature operation of InAs quantum-dash lasers on InP (001)", IEEE Photon. Technol. Lett., 13, 767-769 (2001).  

   
   

5. (99) T. Henderson, M. I. Aksun, C. Peng, H. Morkoc, P. C. Chao, P. M. Smith, K. H. G. Duh and L. F. Lester, "Microwave Performance of a Quarter-Micrometer Gate Low-Noise Pseudomorphic InGaAs/AlGaAs MODFET", IEEE Electron. Dev. Lett., 7, 649-651 (1986).  

   
   

6. (96) P. G. Eliseev, H. Li, A. Stintz, G. T. Liu, T. C. Newell, K. J. Malloy and L. F. Lester, "Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes", Appl. Phys. Lett., 77, 262-264 (2000).  

   
   

7. (81) G. T. Liu, A. Stintz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. J. Malloy and L. F. Lester, "The Influence of Quantum-Well Composition on the Performance of Quantum Dot Lasers Using InAs/InGaAs Dots-in-a-Well (DWELL) Structures", IEEE J. Quantum Electron., 36, 1272-1279 (2000).  

   
   

8. (79) A. Stintz, G. T. Liu, H. Li, L. F. Lester and K. J. Malloy, "Low-threshold current density 1.3 µm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure", IEEE Photon. Technol. Lett., 12, 591-593 (2000).  

   
   

9. (66) P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy and L. F. Lester, "Low-threshold quantum dot lasers with 201 nm tuning range", Electron. Lett., 36, 1544-1545 (2000).  

   
   

10. (61) P. G. Eliseev, H. Li, G. T. Liu, A. Stintz, T. C. Newell, L. F. Lester and K. J. Malloy, "Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers", J. Special Topics Quantum Electron., 7(2), 135-142 (2001).  

    
    

11. (58) X. D. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng and K. J. Malloy, "Passive mode-locking in 1.3 µm two-section InAs quantum dot lasers", Appl. Phys. Lett., 78, 2825-2827 (2001).  

    
    

12. (55) D. J. King, L. Zhang, J. C. Ramer, S. D. Hersee and L. F. Lester, "Temperature Behavior of Pt/Au ohmic contacts to p-GaN", MRS Society Symposium Proceedings, 468, 421-426 (1997).

    
    

13. (54) Y. Qiu, P. Gogna, S. Forouhar, A. Stintz and L. F. Lester, "High-performance InAs quantum-dot lasers near 1.3 µm", Appl. Phys. Lett., 79, 3570-3572 (2001).  

    
    

14. (48) L. F. Lester, J. M. Brown, J. C. Ramer, L. Zhang, S. D. Hersee and J. C. Zolper, "Non-alloyed Ti/Al Ohmic Contacts to n-type GaN Using High Temperature Premetallization Anneal", Appl. Phys. Lett., 69, 2737-2739 (1996).  

    
    

15. (48) H. S. Gingrich, D. R. Chumney, S.-Z. Sun, S. D. Hersee, L. F. Lester and S. R. J. Brueck, "Broadly-Tunable External Cavity Laser Diodes with Staggered Thickness Multiple Quantum Wells", IEEE Photon. Technol. Lett., 9, 155-157 (1997).  

    
    

16. (47) W. Rudolph, M. Sheik-Bahae, A. Bernstein and L. F. Lester, "Femtosecond Autocorrelation Measurements Based on Two-Photon Photoconductivity in ZnSe", Opt. Lett., 22, 313-315 (1997).  

    
    

17. (45) L. F. Lester, P. M. Smith, P. Ho, P. C. Chao, R. C. Tiberio, K. H. G. Duh and E. D. Wolf, "0.15 µm Gate-Length Double Recess Pseudomorphic HEMT with f_max of 350 GHz", 1988 International Electron Devices Meeting Technical Digest, 172-175, San Francisco USA (1988).  

    
    

18. (40) L. Zhang, J. Ramer, J. Brown, K. Zheng, L. F. Lester and S. D. Hersee, "Electron Cyclotron Resonance Etching Characteristics of GaN and SiCl₄/Ar", Appl. Phys. Lett., 68, 367-369 (1996).  

    
    

19. (40) K. H. G. Duh, M. W. Pospieszalski, W. F. Kopp, P. Ho, A. A. Jabra, P. C. Chao, P. M. Smith, L. F. Lester, J. M. Ballingall and S. Weinreb, "Ultra-Low-Noise Cryogenic High-Electron-Mobility-Transistors", IEEE Trans. Electron. Dev., 35, 249-256 (1988).  

    
    

20. (36) L. F. Lester and B. K. Ridley, "Hot Carriers and the Frequency Response of Quantum Well Lasers", J. Appl. Phys., 72, 2579-2588 (1992).  

    
    

21. (34) P. M. Varangis, A. Gavrielides, T. Erneux, V. Kovanis and L. F. Lester, "Frequency Entrainment in Optically Injected Semiconductor Lasers", Phys. Rev. Lett., 78, 2353-2356 (1997).  

    
    

22. (34) P. C. Chao, R. C. Tiberio, K. H. G. Duh, P. M. Smith, J. M. Ballingall, L. F. Lester, B. R. Lee, A. A. Jabra and G. G. Gifford, "0.1 µm Gate-Length Pseudomorphic HEMTs", IEEE Electron. Dev. Lett., 8, 489-491 (1987).  

    
    

23. (33) Y.-C. Xin, L. G. Vaughn, L. R. Dawson, A. Stintz, L. F. Lester, and D. L. Huffaker, "InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers", J. Appl. Phys., 94, 2133-2135 (2003)

    
    

24. (32) A. A. Ukhanov, R. H. Wang, T. J. Rotter, A. Stintz, L. F. Lester, P. G. Eliseev and K. J. Malloy, "Orientation dependence of the optical properties in InAs quantum-dash lasers on InP", Applied Physics Letters, vol. 81, no. 6, pp. 981-983, 2002.  

    
    

25. (32) R. J. Shul, C. G. Willison, M. M. Bridges, J. Han, J. W. Lee, S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, S. M. Donovan, L. Zhang and L. F. Lester, "Selective ICP Etching of Group-III Nitrides in Cl₂- and BCl₃-Based Plasmas", J. Vac. Sci. Technol., A16, 1621-1626 (1998).  

    
    

26. (32) M. I. Aksun, H. Morkoc, L. F. Lester, K. H. G. Duh, P. M. Smith, P. C. Chao, M. Longerbone and L. P. Erickson, "Performance of Quarter-Micron GaAs Metal-Semiconductor Field-Effect Transistors on Si Substrates", Appl. Phys. Lett., 49, 1654-1655 (1986).  

    
    

27. (30) S. D. Offsey, W. J. Schaff, L. F. Lester, L. F. Eastman and S. K. McKernan, "Strained-Layer InGaAs-GaAs-AlGaAs Lasers Grown by Molecular Beam Epitaxy for High-Speed Modulation", J. Quantum Electron., 27, 1455-1462 (1991).  

    
    
    

28. (30) G. T. Liu, A. Stintz, E. A. Pease, T. C. Newell, K. J. Malloy and L. F. Lester, "1.58 µm Lattice-Matched and Strained Digital Alloy AlGaInAs/InP Multiple-Quantum-Well Lasers", IEEE Photon. Technol. Lett., 12, 4-6 (2000).  

    
    

29. (29) L. F. Lester, K. C. Hwang, P. Ho, J. Mazurowski, J. M. Ballingall, J. Sutliff, S. Gupta, J. Whitaker and S. L. Williamson, "Ultra-Fast Long-Wavelength Photodetectors Fabricated on Low-Temperature InGaAs on GaAs", IEEE Photon. Technol. Lett., 5, 511-514 (1993).  

    
    

30. (26) Z. Bakonyi, H. Su, G. Onishchukov, L. F. Lester, A. L. Gray,  T. C. Newell, and A. Tunnermann, "High-gain quantum-dot semiconductor optical amplifier for 1300 nm", IEEE J. Quantum Electron., 39, 1409-1414 (2003).

    
    

31. (25) S. D. Offsey, L. F. Lester, W. J. Schaff and L. F. Eastman, "High-Speed Modulation of Strained-Layer InGaAs-GaAs-AlGaAs Ridge Waveguide Multiple Quantum Well Lasers", Appl. Phys. Lett., 58, 2336-2338 (1991).

    
    

32. (25) X. D. Huang, A. Stintz, H. Li, A. Rice, G. T. Liu, L. F. Lester, J. Cheng, and K. J. Malloy, "Bistable operation of a two-section 1.3-µm InAs quantum dot laser-absorption saturation and the quantum confined Stark effect", IEEE J. Quantum Electron., 37, 414-417 (2001).

    
    

33. (24) H. Su, L. Zhang, A. L. Gray, R. Wang, T. C. Newell, K. J. Malloy, and L. F. Lester,"High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers", IEEE Photon. Technol. Lett., 15, 1504-1506 (2003).

    
    

34. (24) P. M. Smith, P. C. Chao, K. H. G. Duh, L. F. Lester and B. R. Lee, "94 GHz Transistor Amplification Using an HEMT", Electron. Lett., 22, 780-781 (1986).