Center for High Technology Materials
1313 Goddard SE Rm. 139
Albuquerque NM 87106, USA
Tel: (505) 238-9821  Fax: 505 272 7801
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Journal Articles

(* indicates UNM graduate student)

  1. T. Henderson, M. Aksun, C. Peng, H. Morkoc, P. C. Chao, P. M. Smith, K. H. G. Duh, and L. F. Lester, "Microwave Performance of a Quarter-Micrometer Gate Low-Noise Pseudomorphic InGaAs/AlGaAs MODFET," IEEE Electron. Dev. Lett., 7, 649-651 (1986).
  2. M. I. Aksun, H. Morkoc, L. F. Lester, K. H. G. Duh, P. M. Smith, P. C. Chao, M. Longerbone, L. P. Erickson, “Performance of Quarter-Micron GaAs Metal-Semiconductor Field-Effect Transistors on Si Substrates,” Appl. Phys. Lett., 49, 1654-1655 (1986).
  3. P. M. Smith, P. C. Chao, K. H. G. Duh, L. F. Lester, and B. R. Lee, "94 GHz Transistor Amplification Using an HEMT," Electron. Lett., 22, 780-781 (1986).
  4. K. H. G. Duh, P. C. Chao, P. M. Smith, L. F. Lester, and B. R. Lee, "60 GHz Low-Noise High-Electron-Mobility Transistors," Electron. Lett., 22, 647-649 (1986).
  5. P. C. Chao, R. C. Tiberio, K. H. G. Duh, P. M. Smith, J. M. Ballingall, L. F. Lester, B. R. Lee, A. Jabra, and G. G. Gifford, "0.1 µm Gate-Length Pseudomorphic HEMTs," IEEE Electron. Dev. Lett., 8, 489-491 (1987).
  6. K. H. G. Duh, M. Pospieszalski, W. F. Kopp, P. Ho, A. Jabra, P. C. Chao, P. M. Smith, L. F. Lester, J. M. Ballingall, and S. Weinreb, "Ultra-Low-Noise Cryogenic High-Electron-Mobility-Transistors," IEEE Trans. Electron. Dev., 35, 249-256 (1988).
  7. K. H. G. Duh, P. C. Chao, P. M. Smith, L. F. Lester, B. R. Lee, J. M. Ballingall, and M. Y. Kao, "High-Performance Ka-band and V-band HEMT Low-Noise Amplifiers," IEEE Trans. Microwave Theory Tech., 36, 1598-1603 (1988).
  8. K. H. G. Duh, S. M. J Liu, L. F. Lester, P. C. Chao, P. M. Smith, M. D. Das, B. R. Lee, and J. M. Ballingall, "Ultra-Low-Noise Characteristics of Millimeter-Wave High Electron Mobility Transistors," IEEE Electron Dev. Lett., 9, 521-523 (1988).
  9. P. M. Smith, L. F. Lester, P. C. Chao, P. Ho, R. P. Smith, J. M. Ballingall, and M. Y. Kao, "A 0.25-µm Gate-Length Pseudomorphic HFET with 32-mW Output Power at 94 GHz," IEEE Electron Dev. Lett., 10, 437-439 (1989).
  10. P. M. Smith, L. F. Lester, D. W. Ferguson, P. C. Chao, P. Ho, M. Kao, J. M. Ballingall, and R. P. Smith, "Ka-band High Power Pseudomorphic Heterostructure FET," Electron. Lett., 25, 639-640 (1989).
  11. L. F. Lester, W. J. Schaff, S. D. Offsey, and L. F. Eastman, "High-Speed Modulation of InGaAs-GaAs Strained-Layer Multiple-Quantum-Well Lasers Fabricated by Chemically Assisted Ion-beam Etching," IEEE Photon. Technol. Lett., 3, 403-405 (1991).
  12. S. D. Offsey, L. F. Lester, W. J. Schaff, and L. F. Eastman, "High-Speed Modulation of Strained-Layer InGaAs-GaAs-AlGaAs Ridge Waveguide Multiple Quantum Well Lasers," Appl. Phys. Lett., 58, 2336-2338 (1991).
  13. S. D. Offsey, W. J. Schaff, L. F. Lester, L. F. Eastman, and S. K. McKernan, "Strained-Layer InGaAs-GaAs-AlGaAs Lasers Grown by Molecular Beam Epitaxy for High-Speed Modulation," J. Quantum Electron., 27, 1455-1462 (1991).
  14. L. F. Lester, S. D. Offsey, B. K. Ridley, W. J. Schaff, B. A. Foreman, and L. F. Eastman, "Comparison of the Theoretical and Experimental Differential Gain in Strained-Layer InGaAs/GaAs Quantum Well Lasers," Appl. Phys. Lett., 59, 1162-1164 (1991).
  15. L. F. Lester, W. J. Schaff, X. Song, and L. F. Eastman, "Optical and RF Characteristics of Short-Cavity-Length Multiquantum-Well Strained-Layer Lasers," IEEE Photon. Technol. Lett., 3, 1049-1051 (1991).
  16. L. F. Lester, S. S. O'Keefe, W. J. Schaff, and L. F. Eastman, "Multiquantum Well Strained-Layer Lasers with Improved Low Frequency Response and Very Low Damping," Electron. Lett., 28, 383-385 (1992).
  17. L. F. Lester and B. K. Ridley, "Hot Carriers and the Frequency Response of Quantum Well Lasers," J. Appl. Phys., 72, 2579-2588 (1992)
  18. L. F. Lester, K. C. Hwang, P. Ho, J. Mazurowski, J. Ballingall, J. Sutliff, S. Gupta, J. Whitaker, and S. R. Williamson, "Ultra-Fast Long-Wavelength Photodetectors Fabricated on Low-Temperature InGaAs on GaAs," IEEE Photon. Technol. Lett., 5, 511-514 (1993).
  19. J. M. Ballingall, P. Ho, J. Mazurowski, L. Lester, K. C. Hwang, J. Sutliff, S. Gupta, J. Whitaker, “InxGa1-xAs (x=0.25-0.35) Grown at Low Temperature,” J. Electron. Mater., 22, 1471-1475 (1993).
  20. S. Gupta, J. F. Whitaker, S. L. Williamson, G. A. Mourou, L. Lester, K. C. Hwang, P. Ho, J. Mazurowski, J. M. Ballingall, “High-Speed Photodetector Applications of GaAs and InxGa1-xAs/GaAs Grown by Low-Temperature Molecular Beam Epitaxy,” J. Electron. Mater., 22, 1449-1455 (1993).
  21. L. Zhang*, J. Ramer*, J. Brown*, K. Zheng, L. F. Lester, and S. D. Hersee, “Electron Cyclotron Resonance Etching Characteristics of GaN and SiCl4/Ar,” Appl. Phys. Lett., 68, 367-369 (1996).
  22. L. F. Lester, J. M. Brown*, J. C. Ramer*, L. Zhang*, S. D. Hersee, and J. C. Zolper, "Non-alloyed Ti/Al Ohmic Contacts to n-type GaN Using High Temperature Premetallization Anneal," Appl. Phys. Lett., 69, 2737-2739 (1996).
  23. H. S. Gingrich*, D. R. Chumney*, S.-Z. Sun, S. D. Hersee, L. F. Lester, and S. R. J. Brueck, "Broadly-Tunable External Cavity Laser Diodes with Staggered Thickness Multiple Quantum Wells," IEEE Photon. Technol. Lett., 9, 155-157 (1997).
  24. W. Rudolph, M. Sheik-Bahae, A. Bernstein*, and L. F. Lester, "Femtosecond Autocorrelation Measurements Based on Two-Photon Photoconductivity in ZnSe," Opt. Lett., 22, 313-315 (1997).
  25. P. M. Varangis*, A. Gavrielides, T. Erneux, V. Kovanis, and L. F. Lester, "Frequency Entrainment in Optically Injected Semiconductor Lasers," Phys. Rev. Lett., 78, 2353-2356 (1997).
  26. R. J. Shul, C. G. Willison, M. M. Bridges, J. Han, J. W. Lee, S. J. Pearton, C. R. Abernathy, J. D. Mackenzie, S. M. Donovan, L. Zhang*, and L. F. Lester, “Selective ICP Etching of Group-III Nitrides in Cl2- and BCl3-Based Plasmas,” J. Vac. Sci. Technol., A16, 1621-1626 (1998).
  27. P. M Varangis*, A. Gavrielides, V. Kovanis, T. Erneux, and L. F. Lester, “All-optical double-sideband suppressed-carrier modulation of semiconductor lasers,” J. Appl. Phys., 83, 8071-8073 (1998).
  28. P. M. Varangis*, A. Gavrielides, V. Kovanis, and L. F. Lester, “Linewidth Broadening Across a Dynamical Instability,” Phys. Lett. A, 250, 117-122 (1998).
  29. R. J. Shul, L. Zhang*, C. G. Willison, J. Han, S. J. Pearton, J. Hong, C. R. Abernathy, and L. F. Lester, “Group-III Nitride Etch Selectivity in BCl3/Cl2 ICP Plasmas,” MRS Internet J. Nitride Semicond. Res. 4S1 G8.1 (1999).
  30. T. Newell, X. Wu*, A. L. Gray, S. Dorato*, H. Lee, and L. F. Lester, “The Effect of Increased Valence Band Offset on the Operation of 2 µm GaInAsSb/AlGaAsSb Lasers,” IEEE Photon. Technol. Lett., 11, 30-32 (1999).
  31. J. Hong*, R. J. Shul, L. Zhang*, L. F. Lester, H. Cho, Y. B. Hahn, D. A. Hays, K. B. Jung, S. J. Pearton, C.-M. Zetterling, and M. Ostling, “Plasma Chemistries for High Density Plasma Etching of SiC,” J. Electron. Mater., 28(3), 194-199 (1999).
  32. L. Zhang*, L. F. Lester, R. J. Shul, C. G. Willison, and R. P. Leavitt, “Inductively Coupled Plasma Etching of III-V Antimonides in BCl3/Ar and Cl2/Ar,” J. Vac. Sci & Technol., B17(#3), 965-969 (1999).
  33. A. L. Gray*, T. C. Newell, L. F. Lester, and H. Lee, “High-resolution X-ray and Transmission Electron Microscopic Analysis of a GaInAsSb/AlGaAsSb Multiple Quantum Well Laser Structure,” J. Appl. Phys., 85(11), 7664-7670 (1999).
  34. L. F. Lester, A Stintz, H. Li, T. C. Newell, E. A. Pease*, B. A. Fuchs, and K. J. Malloy, “Optical Characteristics of 1.24 µm Quantum Dot Lasers,” IEEE Photon. Technol. Lett., 11, 931-933 (1999).
  35. T. C. Newell, M. W. Wright, H. Hou, and L. F. Lester, “Carrier Distribution, Spontaneous Emission, and Gain Engineering in Lasers with Non-Identical Quantum Wells,” J. Special Topics Quantum Electron., 5(3), 620-626 (1999).
  36. G. T. Liu*, A. Stintz, H. Li, K.J. Malloy, and L. F. Lester, “Extremely Low Room-Temperature Threshold Current Density Diode Lasers Using InAs Dots in an In0.15Ga0.85As Quantum Well," Electron. Lett., 35, 1163-65 (1999).
  37. A. Gutierrez*, P. Dorn*, J. Zeller*, D. King*, L.F. Lester, W. Rudolph and M. Sheik-Bahae, “Autocorrelation Measurement of Femtosecond Laser Pulses Using a ZnSe Two-Photon Detector Array,” Opt. Lett., 24(16), 1175-1177 Aug. 15, 1999.
  38. G. T. Liu*, A. Stintz, E. A. Pease*, T. C. Newell, K. J. Malloy, and L. F. Lester, “1.58 µm Lattice-Matched and Strained Digital Alloy AlGaInAs/InP Multiple-Quantum-Well Lasers,” accepted in IEEE Photon. Technol. Lett. January 2000 issue.
  39. L. Zhang*, R. J. Shul, A. G. Baca, P. C. Chang, J. C. Zolper, U. K. Mishra, S. P. Denbaars, and L. F. Lester, “Epitaxially Grown GaN Junction Field Effect Transistors,” accepted in IEEE Trans. Electron. Dev..
    T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Gain and Linewidth Enhancement Factor in InAs Quantum Dot Laser Diodes,” accepted in December 1999 issue of IEEE Photon. Technol. Lett.

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