| Center
for High Technology Materials 1313 Goddard SE Rm. 139 Albuquerque NM 87106, USA Tel: (505) 238-9821 Fax: 505 272 7801 |
Presentations at Meetings, Conferences and Workshops
Since 1986 over 150 journal articles, conference
presentations and invited papers, 3 US patents issued, 9 patents pending in semiconductors lasers, detectors, high-speed
transistors, and III-V semiconductor fabrication techniques. Estimated number of citations is 1000.
Significant journal articles from the last 6 years, other papers available through my website:
1. S. Osborne, Peter Blood, P. Smowton, Julie Lutti, Y. C. Xin, A. Stintz, D.L. Huffaker and L. F. Lester, “State
filling in InAs quantum dot laser structures” to appear in Journal of Quantum Electronics, December 2004.
2. S.W. Osborne, P. Blood, P.M. Smowton, Y. C. Xin, A. Stintz, D.L. Huffaker, and L.F. Lester, “Optical absorption
cross section of quantum dots” J. Phys.: Condens.
Matter 16, S3749–S3756 (2004).
3. H. Su, L. Zhang, R. Wang, T. C. Newell, A. L. Gray, and L. F. Lester, “Linewidth Study of InAs-InGaAs quantum
dot distributed feedback lasers,” IEEE Photon
Technol. Lett., 16, 2206-2208 (2004).
4. E. A. Pease, L. R. Dawson, L. G. Vaughn, P. Rotella, and L. F. Lester, “2.5-3.5 µm optically pumped GaInSb/AlGaInSb
multiple quantum well lasers grown on AlInSb metamorphic buffer layers,” J.
of Appl. Phys., 93, 3177-81 (2003).
5. Z. Bakonyi, H. Su, G. Onischchukov, L. F. Lester, A. L. Gray, T. C. Newell, and A. Tunnermann, “High-gain quantum-dot
semiconductor optical amplifier for 1300 nm,” IEEE
J. Quantum Electron., 39,
1409-1414 (2003).
6. H. Su, A. L. Gray, R. Wang, T. C. Newell, K. J. Malloy, and L. F. Lester, “High external feedback resistance
of laterally loss-coupled distributed feedback quantum dot semiconductor lasers,” IEEE
Photon. Technol. Lett., 15,
1504-1506 (2003).
7. Y. C. Xin, L. G. Vaughn, L. R. Dawson, A. Stintz, Y. Lin, D. L. Huffaker, and L. F. Lester, “InAs quantum-dot
GaAs-based lasers grown on AlGaAsSb metamorphic buffers” J.
of Appl. Phys., 94, 2133-2135 (2003).
8. A. L. Gray, A. Stintz, K. J. Malloy, T. C. Newell, and L. F. Lester, “Morphology and relaxation in InGaAs/GaAs
multi-layer structures,” J. Crystal Growth, 222, 726-734 (2001).
9. G. T. Liu, A. Stintz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. J. Malloy, and L. F. Lester, “The
Influence of Quantum-Well Composition on the Performance of Quantum Dot Lasers Using InAs/InGaAs Dots-in-a-Well
(DWELL) Structures,” IEEE J. Quantum Electron., 36, 1272-1279 (2000).
10. P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold
quantum dot lasers with 201 nm tuning range,” Electron.
Lett., 36, 1544-1545 (2000).
11. L. Zhang, R. J. Shul, A. G. Baca, P. C. Chang, J. C. Zolper, U. K. Mishra, S. P. Denbaars, and L. F. Lester,
“Epitaxially Grown GaN Junction Field Effect Transistors,” IEEE
Trans. Electron. Dev., 47,
507-511 (2000).
12. T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Gain and Linewidth Enhancement
Factor in InAs Quantum Dot Laser Diodes,” IEEE
Photon. Technol. Lett., 11,
1527-1529 (1999).
13. L. F. Lester, A Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical Characteristics
of 1.24 µm Quantum Dot Lasers,” IEEE Photon.
Technol. Lett., 11, 931-933 (1999).
14. L. Zhang, L. F. Lester, R. J. Shul, C. G. Willison, and R. P. Leavitt, “Inductively Coupled Plasma Etching
of III-V Antimonides in BCl3/Ar and Cl2/Ar,” J.
Vac. Sci & Technol., B17(#3),
965-969 (1999).
15. R. J. Shul, C. G. Willison, M. M. Bridges, J. Han, J. W. Lee, S. J. Pearton, C. R. Abernathy, J. D. Mackenzie,
S. M. Donovan, L. Zhang, and L. F. Lester, “Selective ICP Etching of Group-III Nitrides in Cl2- and BCl3-Based
Plasmas,” J. Vac. Sci. Technol., A16, 1621-1626 (1998).
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