| Center
for High Technology Materials 1313 Goddard SE Rm. 139 Albuquerque NM 87106, USA Tel: (505) 238-9821 (Cell) Fax: (505) 272-7801 |
EDUCATION
- Cornell University, Engineering Physics, B.S., 1984
- Cornell University, Electrical Engineering, Ph.D., 1992
PROFESSIONAL EXPERIENCE (over 20 years experience in III-V Semiconductor Materials and Devices)
- University of New Mexico
- Associate Director, Center for High Technology Materials (2004-present)
- Associate Professor, Electrical and Computer Engineering (2000-present)
- Assistant Professor, ECE (1994-2000)
- Chairman, Tenure & Promotion Committee (2004-2005)
- Member, ECE Chair Search Committee (2004-2005)
- Chairman, CHTM Faculty Search Committee (2001)
- Member, CHTM Faculty Search Committee (1999)
- Chairman of Graduate Area in Optoelectronics and Microelectronics (1997-2001)
- Faculty Advisor to ECE Graduate Student Association (1995-1997)
- Taught courses in Semiconductor Lasers, Semiconductor Physics, Field Effect Devices, Microelectronics Processing, Quantum Theory of Solids, Optoelectronics, and Introduction to Semiconductor Materials and Devices
- Graduated 8 Ph.D. and 8 M.S. students
- Raised over $5M in research and equipment funds from NSF, DoD, and private industry
- Zia Laser, Inc., Albuquerque, NM
- Chief Technology Officer, (2001-2003)
- Chief Research Officer (2003-2005)
- Member, Board of Directors (2001-2005)
- Co-founder
- Raised $11.5M in venture capital for the 1st quantum dot laser company
- Developing quantum dot laser products for communications and computer/microprocessor applications.
- General Electric Electronics Laboratory, Syracuse, NY
- Engineer (1985-1994). Researched and developed ultra low-noise transistors and high speed HEMTs reaching 350 GHz.
PROFESSIONAL SOCIETIES
- Senior Member, IEEE
AREAS OF RESEARCH EXPERIENCE
- Quantum dot lasers
- Mid-IR semiconductor lasers
- GaN process technology and devices
- III-V semiconductor microwave transistors
- High-frequency laser diodes, laser dynamics
- III-V semiconductor processing techniques
AWARDS AND HONORS
- 1998, University of New Mexico, School of Engineering Research Award
- 1994, Martin Marietta’s Manager Award
SHORT LIST OF RECENT JOURNAL ARTICLES
(Since 1986 over 150 journal articles, conference presentations and invited papers, 3 US patents issued, 9 patents pending in semiconductors lasers, detectors, high-speed transistors, and III-V semiconductor fabrication techniques. Estimated number of citations is 1000)
1. S. Osborne, Peter Blood, P. Smowton, Julie Lutti,
Y. C. Xin, A. Stintz, D.L. Huffaker and L. F. Lester, “State filling in InAs quantum dot laser structures” to appear
in Journal of Quantum Electronics, December 2004.
2. S.W. Osborne, P. Blood, P.M. Smowton, Y. C. Xin, A. Stintz, D.L. Huffaker, and L.F. Lester, “Optical absorption
cross section of quantum dots” J. Phys.: Condens.
Matter 16, S3749–S3756 (2004).
3. H. Su, L. Zhang, R. Wang, T. C. Newell, A. L. Gray, and L. F. Lester, “Linewidth Study of InAs-InGaAs quantum
dot distributed feedback lasers,” IEEE Photon
Technol. Lett., 16, 2206-2208 (2004).
4. E. A. Pease, L. R. Dawson, L. G. Vaughn, P. Rotella, and L. F. Lester, “2.5-3.5 µm optically pumped GaInSb/AlGaInSb
multiple quantum well lasers grown on AlInSb metamorphic buffer layers,” J.
of Appl. Phys., 93, 3177-81 (2003).
5. Z. Bakonyi, H. Su, G. Onischchukov, L. F. Lester, A. L. Gray, T. C. Newell, and A. Tunnermann, “High-gain quantum-dot
semiconductor optical amplifier for 1300 nm,” IEEE
J. Quantum Electron., 39,
1409-1414 (2003).
6. H. Su, A. L. Gray, R. Wang, T. C. Newell, K. J. Malloy, and L. F. Lester, “High external feedback resistance
of laterally loss-coupled distributed feedback quantum dot semiconductor lasers,” IEEE
Photon. Technol. Lett., 15,
1504-1506 (2003).
7. Y. C. Xin, L. G. Vaughn, L. R. Dawson, A. Stintz, Y. Lin, D. L. Huffaker, and L. F. Lester, “InAs quantum-dot
GaAs-based lasers grown on AlGaAsSb metamorphic buffers” J.
of Appl. Phys., 94, 2133-2135 (2003).
8. A. L. Gray, A. Stintz, K. J. Malloy, T. C. Newell, and L. F. Lester, “Morphology and relaxation in InGaAs/GaAs
multi-layer structures,” J. Crystal Growth, 222, 726-734 (2001).
9. G. T. Liu, A. Stintz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. J. Malloy, and L. F. Lester, “The
Influence of Quantum-Well Composition on the Performance of Quantum Dot Lasers Using InAs/InGaAs Dots-in-a-Well
(DWELL) Structures,” IEEE J. Quantum Electron., 36, 1272-1279 (2000).
10. P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold
quantum dot lasers with 201 nm tuning range,” Electron.
Lett., 36, 1544-1545 (2000).
11. L. Zhang, R. J. Shul, A. G. Baca, P. C. Chang, J. C. Zolper, U. K. Mishra, S. P. Denbaars, and L. F. Lester,
“Epitaxially Grown GaN Junction Field Effect Transistors,” IEEE
Trans. Electron. Dev., 47,
507-511 (2000).
12. T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Gain and Linewidth Enhancement
Factor in InAs Quantum Dot Laser Diodes,” IEEE
Photon. Technol. Lett., 11,
1527-1529 (1999).
13. L. F. Lester, A Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, “Optical Characteristics
of 1.24 µm Quantum Dot Lasers,” IEEE Photon.
Technol. Lett., 11, 931-933 (1999).
14. L. Zhang, L. F. Lester, R. J. Shul, C. G. Willison, and R. P. Leavitt, “Inductively Coupled Plasma Etching
of III-V Antimonides in BCl3/Ar and Cl2/Ar,” J.
Vac. Sci & Technol., B17(#3),
965-969 (1999).
15. R. J. Shul, C. G. Willison, M. M. Bridges, J. Han, J. W. Lee, S. J. Pearton, C. R. Abernathy, J. D. Mackenzie,
S. M. Donovan, L. Zhang, and L. F. Lester, “Selective ICP Etching of Group-III Nitrides in Cl2- and BCl3-Based
Plasmas,” J. Vac. Sci. Technol., A16, 1621-1626 (1998).
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