Publications

Steve Brueck
S. C. Lee, K. J. Malloy, L. R. Dawson and S. R. J. Brueck Selective Growth and Associated Faceting and Lateral Overgrowth of GaAs in a Nanoscale Limited Area Bounded by a SiO2 Mask in Molecular Beam Epitaxy. Jour. Appl. Phys. 92, 6567-6571 (2002).

S. C. Lee, L. R. Dawson, K. J. Malloy and S. R. J. Brueck Multiple-Wavelength Emission from InGaAs Quantum Wells Grown on a Nanoscale Patterned Single GaAs Substrate by Molecular Beam Epitaxy.
IEEE Journal of Selected Topics in Quantum Electronics JSTQE-8, 972-983 (2002).

A. K. Sharma, S. H. Zaidi, P. C. Logofatu and S. R. J. Brueck "Optical and Electrical Properties of Nanostructured Metal-Silicon-Metal Photodetectors",
IEEE Journal of Quantum Electronics, Vol. 38, No.12, Dec 02. pp.1651-1660.

S. R. J. Brueck "There are No Fundamental Limits to Optical Lithography International Trends in Applied Optics", International Commission on Optics, A. Guenther, ed. pp. 85-110, SPIE Press (2002)

Michael J. O Brien II, Emmanuil Rabinovitch, S. R. J. Brueck and Gabriel P. Lopez
A New Technique for Detecting Changes in Fluorescence Lifetime via Optoelectronic Circuit Auto-Oscillation
Opt. Lett. 26, 1256-1258 (2001)

D. Zubia, S. Zhang, R. Bommena, X. Sun, S. R. J. Brueck and S. D. Hersee
Initial Nanoheteroepitaxial Growth Stages of GaAs on Si(100) by OMVPE
Jour. Cryst. Matl. 30, 812-816 (2001)

S-C. Lee, L. R. Dawson, K. J. Malloy and S. R. J. Brueck
Molecular Beam Epitaxial Growth of One-Dimensional Rows of InAs Quantum Dots on Nanoscale-Patterned GaAs
Appl. Phys. Lett. 79, 2630-2632 (2001)

S-C. Lee, K. J. Malloy and S. R. J. Brueck
Nanoscale Selective Growth of GaAs by Molecular Beam Epitaxy
Jour. Appl. Phys. 90, 4163-4168 (2001).

Jonathan Stohs, David J. Bossert, David J. Gallant and S. R. J. Brueck
Gain, Refractive Index Change, and Linewidth Enhancement Factor in GaAs and InGaAs Quantum-Well Lasers
Jour. Quantum Electron. QE-37, 1449-1459 (2001).

Ch. J. Schwarz, A. V. V. Nampoothiri, J. C. Jaspara, W. Rudolph, and S. R. J. Brueck
Demonstration of Two-Photon Lithography
Jour. Vac. Sci. Technol. B19, 23623-2365 (2001).

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Steve Hersee
Initial Nanoheteroepitaxial Growth of GaAs on Si(100) by OMVPE , D. Zubia*, S. Zhang, R. Bommena*, X. Sun*, S.R.J. Brueck, S.D. Hersee, Journal of Electronic Materials, 30 (2001) 812-816

Nanoheteroepitaxy for the Integration of III-V Devices on Silicon , S.D. Hersee, D. Zubia*, R. Bommena*, X. Sun*, presented at ONR (Office of Naval research) Workshop on Challenges in Porous and Amorphous Wide Gap Semiconductors , June 2001, Newfoundland, Canada.

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Ravi Jain
N.J.C. Libatique and R.K. Jain, A Broadly Tunable Wavelength-Selectable WDM Source Using a Fiber Sagnac Loop Filter, IEEE Photon. Techn. Lett., v. 13(#12) pp. 1283-1285 (Dec. 2001)

J. L. Casson, L. Wang, N. J. C. Libatique, K. T. Gagahan, R. K. Sander, J. M. Robinson, R. K. Jain, Near-IR Tunable Laser Using an Integrated LiTaO3 Electro-Optic Deflector, submitted to Optics Letters

N.J.C. Libatique and R.K. Jain, Channel Count Scaling of a Wavelength-Selectable WDM Fiber Laser Using FBGs for Channel Pinning, submitted to Electronics Letters

N.J.C. Libatique and R.K. Jain, Singlemode Tunable WDM Sources Based on Linewidth-Narrowed Tunable FBGs, submitted to Optics Express

N.J.C. Libatique and R.K. Jain,Semiconductor FFP-Based Large Channel Count Wavelength-Selectable 1.5 um Laser for 50 GHz WDM Applications, submitted to IEEE Photonics Technology Letters

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Sanjay Krishna
X. Bai, C. Kurdak, S. Krishna, P. Bhattacharya
Quantum-well-based phonon detectors; performance analysis; Physica B 316-7 (2002) 362-365

M. Lewis, Ç. Kurdak, S. Krishna and P. Bhattacharya, Charge transformer to enhance noise performance of single-electron transistor amplifiers in high-capacitance applications , Appl. Phys. Lett.,80, 142, 200

K. M. Lewis, Ç. Kurdak, S. Krishna and P. Bhattacharya, Charge transformer to enhance noise performance of single-electron transistor amplifiers in high-capacitance applications , Appl. Phys. Lett.,80, 142, 2002.

S.Krishna, S. Raghavan, A.L. Gray, A. Stintz, K.J. Malloy, Characterization of Rapid-Thermal-Annealed InAs/In0.15Ga0.85As dots-in-well Heterostructure using Double Crystal X-Ray Diffraction and Photoluminescence , Appl. Phys. Lett. (in print)

X. Bai, Ç. Kurdak, S. Krishna, and P. Bhattacharya, Quantum well based phonon detectors; performance analysis , Physica E (in print).

S. Krishna, A. Stiff, P. Bhattacharya, and S. Kennerly High Temperature operation of mid-infrared InAs/GaAs quantum-dot detectors , IEEE LEOS Newsletter, January 2002.

J. Sabarinathan, P. Bhattacharya, P-C Yu and S.Krishna, An Electrically Injected InAs/GaAs Quantum Dot Photonic Crystal Microcavity Light Emitting Diode , (submitted to Optics Letters)

S. Krishna, S. Raghavan, A.L. Gray, A. Stintz and K.J. Malloy, Characterization of Rapid-Thermal-Annealed InAs/In0.13Ga0.87As DWELL Dots using X-Ray Diffraction and Photoluminescence , Appl. Phys. Lett., Vol. 80, 3898, 2002.

S. Raghavan, P. Rotella, A. Stintz, B. Fuchs, S. Krishna, C. Morath, D. A. Cardimona, and S.W. Kennerly, High-Responsivity, Normal-Incidence Long-Wave Infrared (l ~ 7.2 mm) InAs/In0.15Ga0.85As Dots-in-a-Well Detector , Appl. Phys. Lett., 81 (6), August 5th, 2002

S.Krishna, S. Raghavan, A. Stintz, C. Morath, H. Norton, D. Le, D. A. Cardimona, and S.W. Kennerly, Radiometric Characterization of Normal-Incidence InAs/InGaAs Quantum-Dot Detectors (SPIE Proceedings, in print).

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Luke Lester
High-performance InAs quantum-dot lasers near 1.3 mu m.
Qiu, Y.; Gogna, P.; Forouhar, S.; Stintz, A.; Lester, L.F.
Source: Applied Physics Letters; 26 Nov. 2001; vol.79, no.22, p.3570-2

Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers.
Eliseev, P.G.; Li, H.; Liu, T.; Newell, T.C.; Lester, L.F.; Malloy, K.J.
Source: IEEE Journal of Selected Topics in Quantum Electronics; March-April 2001; vol.7, no.2, p.135-42

Room-temperature operation of InAs quantum-dash lasers on InP (001).
Wang, R.H.; Stintz, A.; Varangis, P.M.; Newell, T.C.; Li, H.; Malloy, K.J.; Lester, L.F.
Source: IEEE Photonics Technology Letters; Aug. 2001; vol.13, no.8, p.767-9

Passive mode-locking in 1.3 mu m two-section InAs quantum dot lasers.
Xiaodong Huang; Stintz, A.; Hua Li; Lester, L.F.; Julian Cheng; Malloy, K.J.
Source: Applied Physics Letters; 7 May 2001; vol.78, no.19, p.2825-7

Bistable operation of a two-section 1.3 mu m InAs quantum dot laser-absorption saturation and the quantum confined Stark effect.
Xiaodong Huang; Stintz, A.; Hua Li; Rice, A.; Liu, G.T.; Lester, L.P.; Cheng, J.; Malloy, M.J.
Source: IEEE Journal of Quantum Electronics; March 2001; vol.37, no.3, p.414-17

Morphology and relaxation in In{sub y}Ga{sub 1-y}As/GaAs multi-layer structures.
Gray, A.L.; Stintz, A.; Malloy, K.J.; Newell, T.C.; Lester, L.F.
Source: Journal of Crystal Growth; Feb. 2001; vol.222, no.4, p.726-34

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Marek Osinski
G. A. Smolyakov, P. G. Eliseev, and M. Osinski, Analysis of vector LP modes in VCSELs using the effective frequency method , Physics and Simulation of Optoelectronic Devices IX (Y. Arakawa, P. Blood, and M. Osinski, Eds.), SPIE International Symposium on Optoelectronics 2001, San Jose, California, 22-26 January 2001, Proceedings of SPIE, Vol. 4283, pp. 113-128.

W. Nakwaski, P. Ma_kowiak, and M. Osinski, Modelling of radial steam oxidation of AlAs layers in cylindrically symmetric mesa structures of vertical-cavity surface-emitting lasers , Optica Applicata 31(#2), pp. 289-299, 2001.

M. Osinski, V. A. Smagley, G. A. Smolyakov, and P. G. Eliseev, Design of InGaN/GaN/AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation , Special Issue on Semiconductor Lasers, IEEE Journal of Selected Topics in Quantum Electronics 7 (#2), pp. 270-279, March/April 2001.

M. Osinski, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Ma_kowiak, and W. Nakwaski, Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures , IEEE Photonics Technology Letters 13 (#7), pp. 687-689, July 2001.

A. A. El-Emawy, H.-J Cao, E. Zhmayev, J.-H. Lee, D. Zubia, and M. Osinski, MOCVD growth of InNxAs1-x on GaAs using dimethylhydrazine , Physica Status Solidi (b) 228 (#1), pp. 263-267, 5 November 2001.

Y.-R. Zhao, J. Yellowhair, J.-H. Lee, S. Zhang, A. K. Raub, R.-H. Wang, P. M. Varangis, A.-R. El-Emawy, M. F. Vilela, and M. Osinski, Selective intermixing of InGaAs/GaAs/AlGaAs quantum wells with spin-on-glass/MgF2 grating caps , Design, Fabrication, and Characterization of Photonic Devices II (M. Osinski, S. J. Chua, and A. Ishibashi, Eds.), International Symposium on Photonics and Applications ISPA 01, Singapore, 27-30 Nov. 2001, Proceedings of SPIE, Vol. 4594, pp. 144-155.

Y.-R. Zhao, Y.-C. Xin, R.-H. Wang, M. F. Vilela, G. A. Smolyakov, and M. Osinski, Effects of impurity-free intermixing on InGaAs/GaAs/AlGaAs broad-area diode laser characteristics , Design, Fabrication, and Characterization of Photonic Devices II (M. Osi_ski, S.-J. Chua, and A. Ishibashi, Eds.), International Symposium on Photonics and Applications ISPA 01, Singapore, 27-30 Nov. 2001, Proceedings of SPIE, Vol. 4594, pp. 237-249.

Books Edited:
Y. Arakawa, P. Blood, and M. Osinski (Eds.), Proceedings of SPIE, Vol. 4283 - Physics and Simulation of Optoelectronic Devices IX, SPIE International Symposium on Integrated Optoelectronic Devices Optoelectronics 2001, San Jose, California, 22-26 January 2001.

M. Osinski, S. J. Chua, and A. Ishibashi (Eds.), Proceedings of SPIE, Vol. 4594 - Design, Fabrication, and Characterization of Photonic Devices II, International Symposium on Photonics and Applications ISPA 01 Singapore, 27-30 November 2001