 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
 |
|
||||||||||||||||||||||
 |
 |
 |
|
||||||||||||||||||||
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
|
|||||||||||
 |
 |
 |
 |
 |
|
||||||||||||||||||
 |
|
||||||||||||||||||||||
 |
 |
 |
|
||||||||||||||||||||
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
|
|||||||||||||
 |
 |
 |
 |
 |
|
||||||||||||||||||
 |
|
||||||||||||||||||||||
| ||
contact us || search
|| |
|
LIST OF PUBLICATIONS
1. M. Osin´ski,
“Electromagnetic theory of injection laser radiation”, Rozprawy
Elek-trotechniczne 20, pp. 331-358 (1974) (in Polish).
2. M. Osin´ski, “Dynamical properties of injection laser radiation”,
Poste,py Fizyki 25, pp. 517-536 (1974) (in Polish).
3. M. Osin´ski, “Dielectric-slab model of injection laser”,
Proceedings of the 6th Con-ference on Quantum Electronics and Nonlinear
Optics EKON '74, Poznan´, Po-land, 22-24 April, 1974, Paper A-8,
pp. 44-48 (in Polish).
4. M. Osin´ski, “Epstein layer and the dielectric slab - Comparison
of two models of semiconductor injection laser”, Proceedings of
the 7th Conference on Quantum Electronics and Nonlinear Optics EKON '76,
Poznan´, Poland, 26-29 April, 1976, Paper A-64, p. 97 (in Polish).
5. M. Osin´ski, “Dielectric-slab and Epstein-layer electromagnetic
models of injection lasers”, Archiv für Elektronik und Übertragungstechnik
30, pp. 223-224 (May 1976).
6. M. Osin´ski, “The Epstein layer as an injection laser model”,
Proceedings of the Summer School on Optoelectronics and Integrated Optics,
Máriánske Lázne⁄, Czechoslovakia, 18-30 September,
1976, Part III (Supplement), pp. 494-506.
7. M. Osin´ski, “Degradation of semiconductor junction lasers.
I. Gradual degradation of homojunction lasers”, Rozprawy Elektrotechniczne
23, pp. 409-431 (1977) (in Polish).
8. M. Osin´ski, “Epstein-layer and dielectric-slab electromagnetic
models of semicon-ductor injection lasers”, Optical and Quantum
Electronics 9, pp. 361-371 (1977).
9. M. Osin´ski, “Threshold current in the Epstein layer model
of semiconductor injection lasers”, Proceedings of the 8th Conference
on Quantum Electronics and Nonlinear Optics EKON '78, Poznan´, Poland,
24-27 April, 1978, Paper A-81, pp. 168-170.
10. M. Osin´ski, “Application of the Epstein-layer model in
the theory of lateral modes in stripe-geometry injection lasers”,
Proceedings of the 2nd National Symposium on Optical Waveguides and their
Applications, Jabl/onna, Poland, 13-15 February, 1979, Vol. 1, pp. 50-56
(in Polish).
11. P. G. Eliseev and M. Osin´ski, “Application of the Epstein-layer
theory to the mode guidance in the junction plane of stripe geometry DH
lasers”, Technical Digest of the SILA 79 Conference on Semiconductor
Injection Lasers and their Applica-tions, Cardiff, Wales, 28-29 March,
1979, Paper 15, p. 18.
12. M. Osin´ski and P. G. Eliseev, “Three-dimensional analysis
of the mode properties of stripe-geometry d.h. lasers”, Special
Issue on Semiconductor Injection Lasers, IEE J. Solid-State and Electron
Devices 3, pp. 215-219 (November 1979).
13. T. Choros´ and M. Osin´ski, “A new model of stripe
geometry injection laser with a generalized Epstein profile”, Proceedings
of the International Conference on Ra-diative Recombination and Related
Phenomena in III-V Compound Semiconduc-tors RECON '79, Prague, Czechoslovakia,
4-7 September, 1979, pp. 32-37.
14. M. Osin´ski, “Analysis of the far-field patterns and the
optical guiding mechanisms in the junction plane of stripe-geometry DH
lasers”, Proceedings of the Interna-tional Conference on Radiative
Recombination and Related Phenomena in III-V Compound Semiconductors RECON
'79, Prague, Czechoslovakia, 4-7 September, 1979, pp. 166-170.
15. T. Dziewiecka-Choros´ and M. Osin´ski, “Effective-permittivity
approach to single-and double-heterostructure stripe-geometry semiconductor
lasers”, Proceedings of the 9th Conference on Quantum Electronics
and Nonlinear Optics EKON '80, Poznan´, Poland, 23-26 April, 1980,
Paper A-9, pp. 33-35.
16. M. Osin´ski, “Calculation of beam divergence of the fundamental
lateral mode in stripe-geometry DH lasers”, Proceedings of the 9th
Conference on Quantum Electronics and Nonlinear Optics EKON '80, Poznan´,
Poland, 23-26 April, 1980, Paper A-26, pp. 82-85.
17. P. G. Eliseev and M. Osin´ski, “Use of the Epstein dielectric
model to describe modes of planar stripe-geometry heterojunction lasers”,
Kvantovaya Elektronika 7, pp. 1407-1416 (July 1980) (in Russian). English
translation in: Soviet J. Quantum Electronics 10, pp. 811-816 (July 1980).
18. M. Osin´ski, “Properties of transverse modes in the Epstein-layer
model of broad-contact heterojunction lasers”, Acta Physica Polonica
A60, pp. 109-121 (July 1981).
19. T. Dziewiecka and M. Osin´ski, “An analytical model for
description of optical prop-erties of conventional stripe-geometry injection
lasers”, Proceedings of the Inter-national Workshop on the Physics
of Semiconductor Devices, Delhi, India, 23-28 November, 1981, pp. 60-63.
20. M. J. Adams and M. Osin´ski, “Rate equations for semiconductor
lasers - ten years on”, Technical Digest of the SILA 82 Conference
on Semiconductor Injection Lasers and their Applications, Cardiff, Wales,
30-31 March, 1982, Paper 19, p. 23.
21. M. Osin´ski and M. J. Adams, “Gain spectra of quaternary
semiconductors”, Technical Digest of the SILA 82 Conference on Semiconductor
Injection Lasers and their Applications, Cardiff, Wales, 30-31 March,
1982, Paper 26, p. 30.
22. M. Osin´ski and M. J. Adams, “Computer-simulated transient
evolution of 1.55 mm laser spectra”, Proceedings of the ECOC 82
- 8th European Conference on Op-tical Communication, Cannes, France, 21-24
September, 1982, Paper BII-2, pp. 169-173.
23. M. Osin´ski and M. J. Adams, “Gain spectra of quaternary
semiconductors”, Special Issue on Semiconductor Injection Lasers,
IEE Proceedings, Part I (Solid-State and Electron Devices) 129, pp. 229-236
(December 1982).
24. M. J. Adams and M. Osin´ski, “Longitudinal mode competition
in semiconductor lasers.- Rate equations revisited”, Special Issue
on Semiconductor Injection La-sers, IEE Proceedings, Part I (Solid-State
and Electron Devices) 129, pp. 271-274 (December 1982).
25. M. J. Adams and M. Osin´ski, “Influence of spectral hole-burning
on quaternary laser transients”, Electronics Letters 19, pp. 627-628
(August 1983).
26. M. Osin´ski and M. J. Adams, “Picosecond spectra of gain-switched
quaternary la-sers”, Optics Communications 47, pp. 190-192 (September
1983).
27. M. Osin´ski and M. J. Adams, “Optimal design of monomode
transmitter module”, Proceedings of the ECOC 83 - 9th European Conference
on Optical Communica-tion, Geneva, Switzerland, 23-26 October, 1983, pp.
47-50.
28. T. Dziewiecka and M. Osin´ski, “Generalized Epstein model
of stripe-geometry in-jection lasers”, Applied Optics 23, pp. 94-99
(January 1984).
29. M. Osin´ski and M. J. Adams, “Transient time averaged
spectra of rapidly modulated stripe lasers”, Technical Digest of
the SILA 84 Conference on Semiconductor Injection Lasers and their Applications,
Cardiff, Wales, 27-28 March, 1984, Paper 11, p. 13.
30. M. Osin´ski and M. J. Adams, “Intrinsic manifestation
of regular pulsations in time-averaged spectra of semiconductor lasers”,
Electronics Letters 20, pp. 525-526 (June 1984).
31. M. Osin´ski and M. J. Adams, “Influence of frequency chirping
on transient time averaged spectra of gain switched stripe lasers”,
Proceedings of the 9th IEEE International Semiconductor Laser Conference,
Rio de Janeiro, Brazil, 7-10 August, 1984, pp. 122-123.
32. M. Osin´ski and I. D. Henning, “Phase noise enhancement
in long wavelength semi-conductor lasers”, Proceedings of the ECOC
84 - 10th European Conference on Optical Communication, Stuttgart, Germany,
3-6 September, 1984, pp. 148-149.
33. P. T. Landsberg, M. S. Abrahams, and M. Osin´ski, “Evidence
of no k-selection in gain spectra of quantum well AlGaAs laser diodes”,
IEEE J. Quantum Electron-ics QE-21, pp. 24-28 (January 1985).
34. M. Osin´ski and M. J. Adams, “Transient time-averaged
spectra of rapidly-modulated semiconductor lasers”, Special Issue
on Semiconductor Injection Lasers, IEE Proceedings, Part J (Optoelectronics)
132, pp. 34-37 (February 1985).
35. I. H. White, D. F. G. Gallagher, M. Osin´ski, and D. Bowley,
“Direct streak-camera observation of picosecond gain-switched optical
pulses from a 1.5 µm semicon-ductor laser”, Electronics Letters
21, pp. 197-199 (February 1985).
36. M. Osin´ski and J. Buus, “Phase noise enhancement factor
and the dynamic spectra of semiconductor lasers”, Proceedings of
the IOOC-ECOC '85 - 5th International Conference on Integrated Optics
and Optical Fibre Communication/11th Euro-pean Conference on Optical Communication,
Venice, Italy, 1-4 October, 1985, pp. 721-724.
37. M. Osin´ski, D. F. G. Gallagher, and I. H. White, “Measurement
of linewidth broad-ening factor in gain-switched InGaAsP injection lasers
by CHP method”, Elec-tronics Letters 21, pp. 981-982 (October 1985).
38. M. Osin´ski and M. J. Adams, “Picosecond pulse analysis
of gain-switched 1.55 µm InGaAsP lasers”, IEEE J. Quantum
Electronics QE-21, pp. 1929-1936 (December 1985).
39. W. Streifer and M. Osin´ski, “Comment on array-mode far-field
patterns for phase-locked diode-laser arrays: Coupled-mode theory versus
simple diffraction the-ory”, IEEE J. Quantum Electronics QE-22,
p. 376 (February 1986).
40. A. Hardy, W. Streifer, and M. Osin´ski, “Influence of
external mirror on antireflec-tion-coated phased-array semiconductor lasers”,
Applied Physics Letters 49, pp. 185-187 (July 1986).
41. A. Hardy, W. Streifer, and M. Osin´ski, “Analysis and
design of phase-coupled laser arrays”, Progress in Semiconductor
Laser Diodes, Cambridge Symposium on Optical and Electro-Optical Engineering,
Cambridge, Massachusetts, 25-26 September, 1986, Proceedings of SPIE,
Vol. 723, pp. 29-35.
42. M. Osin´ski and J. Buus, “Linewidth broadening factor
in semiconductor lasers”, Proceedings of the Tenth IEEE International
Semiconductor Laser Conference, Kanazawa, Japan, 14-17 October, 1986,
Paper C-6, pp. 40-41.
43. W. Streifer, M. Osin´ski, D. R. Scifres, D. F. Welch, and P.
S. Cross, “New design for efficient, stable-supermode phased-array
lasers”, Proceedings of the Tenth IEEE International Semiconductor
Laser Conference, Kanazawa, Japan, 14-17 October, 1986, Paper F-3, pp.
78-79.
44. A. Hardy, W. Streifer, and M. Osin´ski, “Coupled-mode
equations for multimode waveguide systems in isotropic or anisotropic
media”, Optics Letters 11, 742-744 (November 1986).
45. A. Hardy, M. Osin´ski, and W. Streifer, “Application of
coupled-mode theory to nearly parallel waveguide systems”, Electronics
Letters 22, pp. 1249-1250 (November 1986).
46. W. Streifer, M. Osin´ski, D. R. Scifres, D. F. Welch, and P.
S. Cross, “Phased-array lasers with a uniform, stable supermode”,
Applied Physics Letters 49, pp. 1496-1498 (December 1986).
47. W. Streifer, M. Osin´ski, and A. Hardy, “Reformulation
of the coupled mode theory of multiwaveguide systems”, Journal of
Lightwave Technology LT-5 (#1), pp. 1-4 (January 1987).
48. M. Osin´ski and J. Buus, “Linewidth broadening factor
in semiconductor lasers - An overview”, IEEE Journal of Quantum
Electronics QE-23 (#1), pp. 9-29 (January 1987), Invited Paper.
49. A. Hardy, M. Osin´ski, and W. Streifer, “Application of
coupled-mode theory to nonparallel sections of directional couplers”,
Technical Digest, OFC/IOOC '87 (Optical Fiber Communication Conference/Sixth
International Conference on In-tegrated Optics and Optical Fiber Communication),
Reno, Nevada, 19-22 January, 1987, paper TUQ38, p. 132.
50. M. Osin´ski, W. Streifer, and A. Hardy, “Coupled-mode
analysis of chirped phased-array semiconductor lasers”, Southwest
Optics '87 Conference, Topical Meeting on Semiconductor Lasers, Albuquerque,
New Mexico, 10-12 February, 1987, Technical Digest Series Vol. 6, paper
ThA6, pp. 168-171, Optical Society of America 1987.
51. J. G. McInerney, D. S. Seo, J. D. Park, and M. Osin´ski, “Resonantly
enhanced noise spectra of diode lasers with tilted external mirrors”,
Final Program, International Workshop on Instabilities, Dynamics, and
Chaos in Nonlinear Optical Systems, Il Ciocco, Lucca, Italy, 8-10 July,
1987, Post-Deadline Paper WC17, pp. 46-48.
52. W. Streifer, M. Osin´ski, and A. Hardy, “A critical overview
of coupled mode theory (Invited Paper)”, Integrated Optical Circuit
Engineering V, SPIE Symposium on Fiber Optics and Integrated Optoelectronics,
San Diego, California, 17-20, August 1987, Proceedings of SPIE, Vol. 835,
pp. 178-187.
53. M. Osin´ski, W. Streifer, and A. Hardy, “Index-guided
phased-arrays with variable stripe widths and interspacings”, Technical
Digest, 13th European Conference on Optical Communication ECOC 87, Helsinki,
Finland, 13-17 September, 1987, Vol. I, pp. 409-412.
54. D. S. Seo, J. D. Park, J. G. McInerney, and M. Osin´ski, “Nonlinear
dynamics of asymmetric external-cavity semiconductor lasers”, Optics
'87 OSA Annual Meeting, Rochester, New York, 18-23 October, 1987, Post-Deadline
Papers, Paper PD14, Journal of the Optical Society of America A 4, p.
P129 (December 1987).
55. M. Y. A. Raja, S. R. J. Brueck, M. Osin´ski, and J. G. McInerney,
“Laser-induced degradation of GaAs photoluminescence”, Applied
Physics Letters 52, pp. 625-627 (February 1988).
56. A. Hardy, W. Streifer, and M. Osin´ski, “Weak coupling
of parallel waveguides”, Optics Letters 13, pp. 161-163 (February
1988), and Erratum, Optics Letters 13, p. 428 (May 1988).
57. M. Y. A. Raja, S. R. J. Brueck, M. Osin´ski, and J. G. McInerney,
“Degradation of photoluminescence efficiency in GaAs under low intensity
laser irradiation”, Advanced Surface Processes for Optoelectronics,
(S. L. Bernasek, T. Venkatesan, and H. Temkin, Eds.), Reno, Nevada, 5-9
April, 1988, Materials Research Society Proceedings Vol. 126, pp. 265-270.
58. C.-P. Cherng, M. Osin´ski, and J. G. McInerney, “Near-field
phase measurements of phased-array diode lasers by shearing interferometry”,
CLEO'88 Conference on Lasers and Electro-Optics, Anaheim, California,
25-29 April, 1988, Technical Digest Series Vol. 7, Paper WM9, pp. 212-213,
Optical Society of America 1988.
59. J. D. Park, D. S. Seo, J. G. McInerney and M. Osin´ski, “Low
frequency intensity noise in asymmetric external cavity semiconductor
lasers”, CLEO'88 Conference on Lasers and Electro-Optics, Anaheim,
California, 25-29 April, 1988, Technical Digest Series Vol. 7, Paper WM10,
pp. 212-214, Optical Society of America 1988.
60. C.-P. Cherng, T. C. Salvi, M. Osin´ski, and J. G. McInerney,
“Lateral near-field wavefront measurements of semiconductor laser
arrays”, Proceedings of the Tenth Annual Ideas in Science and Electronics
Exposition and Symposium, Al-buquerque, New Mexico, 10-12 May, 1988, pp.
116-120.
61. K.-H. Chung, M. Osin´ski, and J. G. McInerney, “Gain saturation
effects on fre-quency chirping in semiconductor lasers”, Proceedings
of the Tenth Annual Ideas in Science and Electronics Exposition and Symposium,
Albuquerque, New Mex-ico, 10-12 May, 1988, pp. 136-141.
62. J.-M. Luo, M. Osin´ski, and J. G. McInerney, “Side mode
injection locking of semi-conductor lasers”, Proceedings of the
Tenth Annual Ideas in Science and Elec-tronics Exposition and Symposium,
Albuquerque, New Mexico, 10-12 May, 1988, pp. 142-147.
63. D. S. Seo, J. D. Park, J. G. McInerney, and M. Osin´ski, “Asymmetric
external-cavity semiconductor laser systems”, Proceedings of the
Tenth Annual Ideas in Science and Electronics Exposition and Symposium,
Albuquerque, 10-12 May, 988, pp. 148-153.
64. J. D. Park, D. S. Seo, J. G. McInerney, and M. Osin´ski, “Low
frequency intensity noise in tilted external cavity semiconductor lasers”,
Proceedings of the Tenth Annual Ideas in Science and Electronics Exposition
and Symposium, Albuquer-que, New Mexico, 10-12 May, 1988, pp. 154-159.
65. K. H. Chung, J. G. McInerney, and M. Osin´ski, “Power
and optical frequency de-pendence on feedback phase in external cavity
semiconductor lasers”, Proceed-ings of the Tenth Annual Ideas in
Science and Electronics Exposition and Sym-posium, Albuquerque, New Mexico,
10-12 May, 1988, pp. 160-167.
66. D. S. Seo, J. D. Park, J. G. McInerney, and M. Osin´ski, “Effects
of feedback asym-metry in external-cavity semiconductor laser systems”,
Electronics Letters 24, pp. 726-728 (June 1988).
67. M. Y. A. Raja, S. R. J. Brueck, M. Osin´ski, C. F. Schaus, J.
G. McInerney, T. M. Brennan, and B. E. Hammons, “Wavelength-resonant
enhanced gain/absorption structure for optoelectronic devices”,
XVI International Conference on Quantum Electronics IQEC'88, Tokyo, Japan,
18-21 July, 1988, Post-Deadline Papers, Pa-per PD-23, pp. 52-53.
68. M. Y. A. Raja, S. R. J. Brueck, M. Osin´ski, and J. G. McInerney,
“Response to «Comment on ‘Laser induced degradation
of GaAs photoluminescence’»”, Ap-plied Physics Letters
53, pp. 927-928 (September 1988).
69. M. Y. A. Raja, S. R. J. Brueck, M. Osin´ski, C. F. Schaus, J.
G. McInerney, T. M. Brennan, and B. E. Hammons, “Novel wavelength-resonant
optoelectronic struc-ture and its application to surface-emitting semiconductor
lasers”, Electronics Letters 24 (18), pp. 1140-1142 (September 1988).
70. M. Y. A. Raja, S. R. J. Brueck, M. Osin´ski, C. F. Schaus, J.
G. McInerney, T. M. Brennan, and B. E. Hammons, “Surface-emitting,
multiple quantum well GaAs/ AlGaAs laser with wavelength-resonant periodic
gain medium”, Applied Physics Letters 53, pp. 1678-1680 (October
1988), and Erratum, Applied Physics Let-ters 54, p. 677 (February 1989).
71. M. Y. A. Raja, S. R. J. Brueck, M. Osin´ski, C. F. Schaus, J.
G. McInerney, T. M. Brennan, and B. E. Hammons, “Wavelength-resonant,
surface-emitting semicon-ductor laser: A novel quantum optical structure”,
Conference Proceedings, 1988 LEOS Annual Meeting, Santa Clara, California,
2-4 November, 1988, Paper OE1.3, pp. 8-10.
72. A. Hardy, W. Streifer, and M. Osin´ski, “Chirping effects
in phase-coupled laser arrays”, IEE Proceedings Pt. J (Optoelectronics)
135, pp. 443-450 (December 1988), and Erratum, IEE Proceedings Pt. J (Optoelectronics)
136, p. 13 (February 1989).
73. S. R. J. Brueck, M. Y. A. Raja, M. Osin´ski, C. F. Schaus, M.
Mahbobzadeh, J. G. McInerney, and K. J. Dahlhauser, “Optical cavity
design for wavelength-reso-nant, surface-emitting semiconductor lasers
(Invited Paper)”, Laser Diode Tech-nology and Applications (L. Figueroa,
Ed.), SPIE Symposium on Lasers and Op-tics OE/LASE'89, Los Angeles, California,
18-20 January, 1989, Proceedings of SPIE, Vol. 1043, pp. 111-122.
74. K. H. Chung, J. G. McInerney, and M. Osin´ski, “Measurement
of semiconductor laser linewidth enhancement factor using coherent optical
feedback”, Laser Diode Technology and Applications (L. Figueroa,
Ed.), SPIE Symposium on Lasers and Optics OE/LASE'89, Los Angeles, California,
18-20 January, 1989, Proceedings of SPIE, Vol. 1043, pp. 175-183.
75. K. H. Chung, J. G. McInerney, and M. Osin´ski, “Coherent
feedback effects in short-external-cavity semiconductor lasers (Invited
Paper)”, Proceedings of the 2nd ASEAN Science and Technology Week,
Manila, Philippines, 30 January - 4 Feb-ruary, 1989, pp. 525-547.
76. J.-M. Luo, M. Osin´ski, and J. G. McInerney, “Theory of
side-mode injection-locked semiconductor lasers (Invited Paper)”,
Proceedings of the 2nd ASEAN Science and Technology Week, Manila, Philippines,
30 January - 4 February, 1989, pp. 621-653.
77. J.-M. Luo, M. Osin´ski, and J. G. McInerney, “Side-mode
injection locking of semi-conductor lasers”, Special Issue on Semiconductor
and Integrated Optoelectron-ics, IEE Proceedings Part J (Optoelectronics)
136, pp. 33-37 (February 1989).
78. D. S. Seo, J. D. Park, J. G. McInerney, and M. Osin´ski, “Compound
cavity modes in semiconductor lasers with asymmetric optical feedback”,
Applied Physics Let-ters 54, pp. 990-992 (March 1989).
79. M. Osin´ski, “Effective mass of holes in quaternary InGaAsP
alloys lattice-matched to InP", CRC Critical Reviews in Solid State
and Materials Sciences 15, pp. 327-343 (April 1989).
80. K. H. Chung, J. G. McInerney, and M. Osin´ski, “Spectral
properties of short exter-nal cavity semiconductor laser”, CLEO'89
Conference on Lasers and Electro-Optics, Baltimore, Maryland, 24-28 April,
1989, Technical Digest Series Vol. 11, Paper THK27, pp. 302-303, Optical
Society of America 1989.
81. M. Y. A. Raja, S. R. J. Brueck, M. Osin´ski, C. F. Schaus, J.
G. McInerney, T. M. Brennan, and B. E. Hammons, “Surface-emitting
lasers: a comparison of reso-nant periodic gain and conventional structures”,
CLEO'89 Conference on Lasers and Electro-Optics, Baltimore, Maryland,
24-28 April, 1989, Technical Digest Series Vol. 11, Paper FC4, pp. 382-383,
Optical Society of America 1989.
82. D. S. Seo, J. D. Park, J. G. McInerney, and M. Osin´ski, “Modal
properties of semi-conductor lasers with asymmetric optical feedback”,
QELS'89 Conference on Quantum Electronics and Laser Science, Baltimore,
Maryland, 24-28 April, 1989, Technical Digest Series Vol. 12, Paper TuJJ3,
pp. 72-75, Optical Society of America 1989.
83. J. D. Park, D. S. Seo, J. G. McInerney, and M. Osin´ski, “Nonlinear
dynamics of semiconductor lasers: low frequency self-pulsations due to
asymmetric optical feedback”, QELS'89 Conference on Quantum Electronics
and Laser Science, Baltimore, Maryland, 24-28 April, 1989, Technical Digest
Series Vol. 12, Paper TuJJ4, pp. 74-75, Optical Society of America 1989.
84. M. Y. A. Raja, S. R. J. Brueck, M. Osin´ski, C. F. Schaus, J.
G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant periodic
gain surface-emitting semi-conductor lasers”, Special Issue on Semiconductor
Lasers, IEEE Journal of Quantum Electronics 25, pp. 1500-1512 (June 1989).
85. H.-F. Liu, R. Takahashi, M. Osin´ski, and T. Kamiya, “Picosecond
single-mode pulse compression using 1.3-µm Fabry-Perot laser diode
and dispersion-shifted fibre”, 15th European Conference on Optical
Communication ECOC 89, Göteborg, Sweden, 10-14 September, 1989, Vol.
1, Paper ThB22-7, pp. 441-444.
86. J.-D. Park, D.-S. Seo, J. G. McInerney, G. C. Dente, and M. Osin´ski,
“Low-fre-quency self-pulsations in asymmetric external cavity semiconductor
lasers due to multiple feedback effects”, Optics Letters 14, pp.
1054-1056 (October 1989).
87. C.-P. Cherng, T. C. Salvi, M. Osin´ski, and J. G. McInerney,
“Phase front reconstruction of diode laser arrays using ring interferometer”,
Optics '89 OSA Annual Meeting, Orlando, Florida, 15-20 October, 1989,
Technical Digest Series Vol. 18, Optical Society of America 1989, Paper
MAA2, p. 50.
88. J.-M. Luo and M. Osin´ski, “Multimode stability analysis
of side-mode injection-locked semiconductor lasers”, Optics '89
OSA Annual Meeting, Orlando, Flor-ida, 15-20 October, 1989, Technical
Digest Series Vol. 18, Optical Society of America 1989, Paper TuP5, p.
87.
89. C.-P. Cherng, M. Osin´ski, and J. G. McInerney, “Diffraction-limited
single-lobed emission from carrier-guided diode laser array in an external
cavity with spatial filter”, Conference Proceedings, Optics '89
LEOS Annual Meeting, Orlando, Florida, 17-20 October, 1989, Paper OE4.2,
pp. 78-79.
90. D.-S. Seo, J.-D. Park, J. G. McInerney, and M. Osin´ski, “Multiple
feedback effects in asymmetric external cavity semiconductor lasers”,
IEEE Journal of Quantum Electronics 25, pp. 2229-2238 (November 1989).
91. R. Takahashi, H.-F. Liu, M. Osin´ski, and T. Kamiya, “Picosecond
single-mode pulse compression using a 1.3-µm Fabry-Perot laser diode,
a dispersion-shifted fiber, and a grating monochromator”, Applied
Physics Letters 55, pp. 2377-2379 (December 1989).
92. M. Osin´ski, “Heavy-hole effective mass in InP - A critical
examination”, Conference Proceedings, Second International Conference
on Indium Phosphide and Related Materials, Denver, Colorado, 23-25 April,
1990, Paper P37, pp. 330-333.
93. C.-P. Cherng, J. G. McInerney, and M. Osin´ski, “Stable
single-lobed emission from a semiconductor laser array by spatial filtering
in an external cavity”, CLEO '90 Conference on Lasers and Electro-Optics,
Anaheim, California, 21-25 May, 1990, Technical Digest Series 1990 Vol.
7, Optical Society of America 1990, Pa-per CThI13, pp. 388-390.
94. J.-M. Luo and M. Osin´ski, “Simulation of frequency noise
spectra in injection locked semiconductor lasers”, IQEC'90 XVII
International Quantum Electronics Conference, Anaheim, California, 21-25
May, 1990, Technical Digest Series 1990 Vol. 8, Optical Society of America
1990, Paper QThI25, pp. 248-249.
95. C.-P. Cherng, T. C. Salvi, M. Osin´ski, and J. G. McInerney,
“Near-field wavefront measurements of semiconductor laser arrays
by shearing interferometry”, Ap-plied Optics 29, pp. 2701-2706 (June
1990).
96. C.-P. Cherng and M. Osin´ski, “Lateral wavefront measurements
of high-power semiconductor lasers using a three-mirror cyclic interferometer”,
15th Congress of the International Commission for Optics "Optics
in Complex Systems" (F. Lanzl, H.-J. Preuss, and G. Weigelt, Eds.),
Garmisch-Partenkirchen, Germany, 5-10 August, 1990, Proceedings of SPIE,
Vol. 1319, pp. 40-41.
97. M. Mahbobzadeh and M. Osin´ski, “Novel distributed-feedback
resonant-periodic-gain structure for vertical-cavity surface-emitting
semiconductor lasers”, Elec-tronics Letters 26, pp. 1716-1718 (September
1990).
98. W. Nakwaski and M. Osin´ski, “Thermal effects in vertical-cavity
surface-emitting semiconductor lasers”, Technical Digest, 2nd Annual
Symposium on Ceramics and Advanced Materials, Santa Fe, New Mexico, 5
October, 1990, p. 9.
99. M. Osin´ski, “Vertical-cavity surface-emitting semiconductor
lasers for optical inter-connections (Invited Paper)”, Proceedings
of the First International Workshop on Photonic Networks, Components and
Applications (J. Chrostowski and J. Terry, Eds.), Montebello, Quebec,
Canada, 11-13 October, 1990, Series in Optics and Photonics Vol. 2, World
Scientific, Singapore 1991, pp. 70-80.
100. J.-M. Luo and M. Osin´ski, “Side-mode injection locking
characteristics of semicon-ductor lasers: Multimode analysis”, Proceedings
of the First International Work-shop on Photonic Networks, Components
and Applications (J. Chrostowski and J. Terry, Eds.), Montebello, Quebec,
Canada, 11-13 October, 1990, Series in Optics and Photonics Vol. 2, World
Scientific, Singapore 1991, pp. 195-199.
101. C.-P. Cherng and M. Osin´ski, “Observation of low-order
lateral modes in broad-area diode lasers”, Technical Digest, OSA
1990 Annual Meeting, Boston, Mas-sachusetts, 4-9 November, 1990, Technical
Digest Series 1990 Vol. 15, Paper MK9, pp. 15-16.
102. W. E. Thompson and M. Osin´ski, “Longitudinal behavior
in semiconductor laser diodes”, Technical Digest, OSA 1990 Annual
Meeting, Boston, Massachusetts, 4-9 November, 1990, Technical Digest Series
1990 Vol. 15, Paper MK11, p. 16.
103. J.-M. Luo and M. Osin´ski, “Enhanced stable-locking range
in side-mode injection locked semiconductor lasers”, Technical Digest,
OSA 1990 Annual Meeting, Boston, Massachusetts, 4-9 November, 1990, Technical
Digest Series 1990 Vol. 15, Paper TuA3, p. 61.
104. M. Mahbobzadeh and M. Osin´ski, “Novel distributed-feedback
surface-emitting laser design”, Technical Digest, OSA 1990 Annual
Meeting, Boston, Mas-sachusetts, 4-9 November, 1990, Technical Digest
Series 1990 Vol. 15, Paper FJ3, p. 240; and LEOS '90 Conference Proceedings,
IEEE LEOS 1990 Annual Meeting, Boston, Massachusetts, 4-9 November, 1990,
Paper OE13.3/FJ3, pp. 366-367.
105. C.-P. Cherng and M. Osin´ski, “Improved coupled-mode
analysis of diffraction-coupled diode laser arrays”, IEEE LEOS 1990
Annual Meeting, Boston, Mas-sachusetts, 4-9 November, 1990, Paper SDL3.6,
LEOS '90 Conference Digest, p. 21, and LEOS '90 Conference Proceedings,
pp. 426-427.
106. J. G. McInerney, J.-D. Park, D.-S. Seo, and M. Osin´ski, “Nonlinear
dynamics of asymmetric external cavity semiconductor lasers”, Solitons
and Chaos in Optical Systems (H. C. Morris and D. M. Heffernan, Eds.),
Plenum Press, New York, Winter 1990.
107. H.-F. Liu, M. Osin´ski, and T. Kamiya, “Optical chaos
in modulated multi-terminal semiconductor lasers”, Solitons and
Chaos in Optical Systems (H. C. Morris and D. M. Heffernan, Eds.), Plenum
Press, New York, Winter 1990.
108. M. Osin´ski, “Vertical-cavity surface-emitting semiconductor
lasers: Present status and future prospects (Invited Paper)”, Laser
Diode Technology and Applications III (D. Renner, Ed.), SPIE Symposium
on High Power Lasers, OE/LASE'91, Los Angeles, California, January 20-25,
1991, Proceedings of SPIE, Vol. 1418, pp. 2-24.
109. M. Mahbobzadeh and M. Osin´ski, “Novel distributed-feedback
structure for sur-face-emitting semiconductor lasers”, Laser Diode
Technology and Applications III (D. Renner, Ed.), SPIE Symposium on High
Power Lasers, OE/LASE'91, Los Angeles, California, 20-25 January, 1991,
Proceedings of SPIE, Vol. 1418, pp. 25-31.
110. C.-P. Cherng and M. Osin´ski, “Fundamental array mode
operation of semiconduc-tor laser arrays using external spatial filtering”,
Laser Diode Technology and Applications III (D. Renner, Ed.), SPIE Symposium
on High Power Lasers, OE/LASE'91, Los Angeles, California, 20-25 January,
1991, Proceedings of SPIE, Vol. 1418, pp. 372-385.
111. W. Nakwaski and M. Osin´ski, “Temperature profiles in
etched-well surface-emit-ting semiconductor lasers”, Japanese Journal
of Applied Physics Part 2 (Letters) 30, pp. L596-L598 (April 1991).
112. W. Nakwaski and M. Osin´ski, “Thermal waveguiding in
etched-well surface-emit-ting diode lasers”, CLEO '91 Conference
on Lasers and Electro-Optics, Balti-more, Maryland, 12-17 May, 1991, 1991
Technical Digest Series Vol. 10, Optical Society of America 1991, Paper
CWF26, pp. 262-263.
113. J.-M. Luo and M. Osin´ski, “Simulation of field-noise
spectra in injection-locked semiconductor lasers”, QELS'91 Conference
on Quantum Electronics Laser Sci-ence, Baltimore, Maryland, 12-17 May,
1991, 1991 Technical Digest Series Vol. 11, Optical Society of America
1991, Paper QWD29, pp. 150-151.
114. W. Nakwaski and M. Osin´ski, “Thermal properties of etched-well
surface-emitting semiconductor lasers”, Special Issue on Semiconductor
Lasers, IEEE Journal of Quantum Electronics 27 (#6), pp. 1391-1401 (June
1991).
115. J.-M. Luo and M. Osin´ski, “Stable-locking bandwidth
in sidemode injection locked semiconductor lasers”, Electronics
Letters 27, pp. 1737-1739 (September 1991).
116. M. Mahbobzadeh, E. Gandjbakhch, and M. Osin´ski, “High-power
operation of dis-tributed-feedback resonant-periodic-gain surface-emitting
lasers”, Integrated Optoelectronics for Communication and Processing
(C.-S. Hong, Ed.), SPIE Symposium on Optical Fiber Materials and Devices,
OE/Fibers'91, Boston, Mas-sachusetts, 3-6 September, 1991, Proceedings
of SPIE, Vol. 1582, pp. 121-131.
117. W. Nakwaski and M. Osin´ski, “Improved thermal properties
of etched-well surface-emitting lasers with highly-doped P-cladding”,
Integrated Optoelectronics for Communication and Processing (C.-S. Hong,
Ed.), SPIE Symposium on Optical Fiber Materials and Devices, OE/Fibers'91,
Boston, Massachusetts, 3-6 Septem-ber, 1991, Proceedings of SPIE, Vol.
1582, pp. 277-288.
118. C.-P. Cherng and M. Osin´ski, “Coupled broad-area mode
theory of gain-guided laser arrays”, Journal of Applied Physics
70, pp. 4617-4619 (October 1991).
119. W. Nakwaski and M. Osin´ski, “Thermal properties of etched-well
GaAs/AlGaAs surface-emitting diode lasers”, Technical Digest, 3rd
Annual Symposium on Ce-ramics and Advanced Materials, Albuquerque, New
Mexico, 24-25 October, 1991, pp. 16-17.
120. M. Mahbobzadeh, E. Gandjbakhch, E. A. Armour, K. Zheng, S.-Z. Sun,
C. F. Schaus, and M. Osin´ski, “Distributed-feedback GaAs/AlGaAs/AlAs
vertical-cav-ity surface-emitting laser with resonant-periodic-gain active
region”, Technical Digest, 3rd Annual Symposium on Ceramics and
Advanced Materials, Albu-querque, New Mexico, 24-25 October, 1991, pp.
17-18.
121. M. Osin´ski and C.-P. Cherng, “Broad-area mode-coupling
model for carrier-guided diode laser arrays”, Technical Digest,
3rd Annual Symposium on Ceramics and Advanced Materials, Albuquerque,
New Mexico, 24-25 October, 1991, p. 18.
122. M. Mojahedie and M. Osin´ski, “Operator ordering in effective-mass
Hamiltonian for semiconductor superlattices and quantum wells”,
Technical Digest, 3rd An-nual Symposium on Ceramics and Advanced Materials,
Albuquerque, New Mex-ico, 24-25 October, 1991, pp. 18-19.
123. W. Nakwaski and M. Osin´ski, “Thermal analysis of etched-well
surface-emitting diode lasers”, Microwave and Optical Technology
Letters 4, pp. 541-543 (November 1991).
124. W. Nakwaski and M. Osin´ski, “Heat source distribution
in etched-well surface-emitting semiconductor lasers”, IEEE Photonics
Technology Letters 3, pp. 979-981 (November 1991).
125. W. Nakwaski and M. Osin´ski, “Optimization of thermal
properties of etched-well surface-emitting GaAs/AlGaAs diode lasers”,
Technical Digest, OSA 1991 An-nual Meeting, San Jose, California, 3-8
November, 1991, Technical Digest Series Vol. 17, Optical Society of America
1991, Paper MHH4, p. 37.
126. M. Mojahedie and M. Osin´ski, “Effects of operator ordering
in effective-mass Hamiltonian on transition energies in semiconductor
quantum wells”, Technical Digest, OSA 1991 Annual Meeting, San Jose,
California, 3-8 November, 1991, Technical Digest Series Vol. 17, Optical
Society of America 1991, Paper WH4, p. 113.
127. M. Osin´ski and C.-P. Cherng, “Thermal focusing effects
in gain-guided diode laser arrays”, Technical Digest, OSA 1991 Annual
Meeting, San Jose, California, 3-8 November, 1991, Technical Digest Series
Vol. 17, Optical Society of America 1991, Paper WS4, p. 132.
128. W. E. Thompson, C.-P. Cherng, and M. Osin´ski, “Array-mode
selection in nonab-sorbing-mirror diode laser arrays”, Technical
Digest, OSA 1991 Annual Meet-ing, San Jose, California, 3-8 November,
1991, Technical Digest Series Vol. 17, Optical Society of America 1991,
Paper WS5, p. 132.
129. M. Osin´ski and C.-P. Cherng, “Broad-area mode coupling
in gain-guided diode laser arrays”, LEOS '91 Conference Digest,
IEEE LEOS 1991 Annual Meeting, San Jose, California, 4-7 November, 1991,
Paper SDL 1.6, p. 13.
130. W. Nakwaski and M. Osin´ski, “Thermal analysis of two-dimensional
etched-well surface-emitting diode laser arrays”, LEOS '91 Conference
Digest, IEEE LEOS 1991 Annual Meeting, San Jose, California, 4-7 November,
1991, Paper SDL 3.5, p. 28.
131. M. Osin´ski and W. Nakwaski, “Thermal properties of etched-well
surface-emitting diode lasers and two-dimensional arrays”, Laser
Diode Technology and Applica-tions IV (D. Renner, Ed.), SPIE Laser and
Sensor Engineering Symposium, OE/LASE'92, Los Angeles, California, 20-22
January, 1992, Proceedings of SPIE, Vol. 1634, pp. 61-83.
132. M. Mahbobzadeh, E. Gandjbakhch, E. A. Armour, K. Zheng, S.-Z. Sun,
C. F. Schaus, and M. Osin´ski, “Distributed-feedback vertical-cavity
surface-emitting laser with resonant-periodic-gain active region”,
Laser Diode Technology and Applications IV (D. Renner, Ed.), SPIE Laser
and Sensor Engineering Sympo-sium, OE/LASE'92, Los Angeles, California,
20-22 January, 1992, Proceedings of SPIE, Vol. 1634, pp. 564-575.
133. M. Osin´ski, “Control of thermal problems in monolithically
integrated vertical-cavity surface-emitting semiconductor laser arrays
(Invited Paper)”, Proceedings of the 2nd IEEE International Workshop
on Photonic Networks, Components and Applications (J. Chrostowski and
J. Terry, Eds.), Montebello, Quebec, Canada, 9-11 March, 1992, OCRI Publications,
pp. 1.8.1-1.8.12.
134. J.-M. Luo and M. Osin´ski, “Side-mode injection locking
characteristics of semicon-ductor lasers: Frequency and field noise spectra”,
Proceedings of the 2nd IEEE Interna-tional Workshop on Photonic Networks,
Components and Applications (J. Chrostowski and J. Terry, Eds.), Montebello,
Quebec, Canada, 9-11 March, 1992, OCRI Publications, pp. 3.1.1-3.1.6.
135. W. Nakwaski and M. Osin´ski, “Thermal resistance of top-surface-emitting
vertical-cavity semiconductor lasers and monolithic two-dimensional arrays”,
Electronics Letters 28 (#6), pp. 572-574 (March 1992), and Erratum, Electronics
Letters 28, p. 1283 (June 1992).
136. W. Nakwaski and M. Osin´ski, “Thermal analysis of top
surface-emitting proton implanted microlasers”, CLEO '92 Conference
on Lasers and Electro-Optics, Anaheim, California, 10-15 May, 1992, Technical
Digest Series Vol. 12, Optical Society of America 1992, Paper JThA6, pp.
386-387; and QELS '92 Quantum Electronics and Laser Science Conference,
Anaheim, California, 10-15 May, 1992, Technical Digest Series Vol. 13,
Optical Society of America 1992, Paper JThA6, pp. 172-174.
137. M. Mahbobzadeh and M. Osin´ski, “High-power-density pulsed
operation of dis-tributed-feedback vertical-cavity surface-emitting laser
with resonant-periodic-gain active region”, CLEO '92 Conference
on Lasers and Electro-Optics, Ana-heim, California, 10-15 May, 1992, Technical
Digest Series Vol. 12, Optical Soci-ety of America 1992, Paper JThA7,
pp. 388-389; and QELS '92 Quantum Elec-tronics and Laser Science Conference,
Anaheim, California, 10-15 May, 1992, Technical Digest Series Vol. 13,
Optical Society of America 1992, Paper JThA7, pp. 174-175.
138. W. Nakwaski, M. Osin´ski, M. Bugajski, and B. Mroziewicz, “Self-consistent
semi-analytical approach to thermal and electrical characteristics of
etched-well sur-face-emitting diode lasers”, Technical Digest, IQEC'92
XVIII International Quantum Electronics Conference, Vienna, Austria, 14-19
June, 1992, Paper PTh093, pp. 484-485.
139. J.-M. Luo and M. Osin´ski, “Multimode small-signal analysis
of side-mode injec-tion-locked semiconductor lasers”, Japanese Journal
of Applied Physics Part 2 (Letters) 31, pp. L685-L688 (June 1992).
140. M. Osin´ski and W. Nakwaski, “Thermal effects in monolithically
integrated two-dimensional arrays of etched-well surface-emitting diode
lasers”, LEOS 1992 Summer Topical Meeting Digest on Integrated Optoelectronics,
Santa Barbara, California, 5-7 August, 1992, Paper ThB4, pp. 49-50.
141. W. Nakwaski and M. Osin´ski, “Thermal properties of proton-implanted
top-sur-face-emitting microlasers in linear and nonlinear regimes”,
LEOS 1992 Sum-mer Topical Meeting Digest on Smart Pixels, Santa Barbara,
California, 10-12 August, 1992, Paper TuA4, pp. 47-48.
142. W. Nakwaski and M. Osin´ski, “Self-consistent calculation
of temperature profiles in proton-implanted top-surface-emitting diode
lasers”, Sources and Detectors for Fiber Communications (S. D. Hersee,
Ed.), SPIE International Symposium OE/FIBERS'92, Boston, Massachusetts,
8-11 September, 1992, Proceedings of SPIE, Vol. 1788, pp. 108-115.
143. M. Osin´ski, W. Nakwaski, and J. Cheng, “Effect of top-contact
geometry on spreading resistance in proton-implanted vertical-cavity surface-emitting
lasers”, Sources and Detectors for Fiber Communications (S. D. Hersee,
Ed.), SPIE Inter-national Symposium OE/FIBERS'92, Boston, Massachusetts,
September 8-11, 1992, Proceedings of SPIE, Vol. 1788, pp. 121-131.
144. M. Osin´ski, M. Mojahedie, and M. W. Prairie, “Density
of states in finite-barrier quantum wells”, Technical Digest, OSA
1992 Annual Meeting, Albuquerque, New Mexico, 20-25 September, 1992, Technical
Digest Series Vol. 23, Optical Society of America 1992, Paper MZ4, p.
23.
145. W. Nakwaski and M. Osin´ski, “Reduction of thermal resistance
of etched-well ver-tical-cavity surface-emitting lasers”, Technical
Digest, OSA 1992 Annual Meet-ing, Albuquerque, New Mexico, 20-25 September,
1992, Technical Digest Series Vol. 23, Optical Society of America 1992,
Paper TuZ23, p. 72.
146. M. Osin´ski, W. Nakwaski, and J. Cheng, “Influence of
top-contact configuration on series resistance of proton-implanted vertical-cavity
surface-emitting lasers”, Technical Digest, OSA 1992 Annual Meeting,
Albuquerque, New Mexico, 20-25 September, 1992, Technical Digest Series
Vol. 23, Optical Society of America 1992, Paper FKK1, pp. 209-210.
147. M. Osin´ski, W. Nakwaski, and J. Stohs, “How to reduce
thermal resistance of top-surface-emitting vertical-cavity diode lasers?”,
Technical Digest, OSA 1992 An-nual Meeting, Albuquerque, New Mexico, 20-25
September, 1992, Technical Di-gest Series Vol. 23, Optical Society of
America 1992, Paper FKK2, p. 210.
148. M. Osin´ski and W. Nakwaski, “Three-dimensional isotherm
mapping for proton-implanted top-surface-emitting diode lasers”,
Technical Digest, OSA 1992 An-nual Meeting, Albuquerque, New Mexico, 20-25
September, 1992, Technical Di-gest Series Vol. 23, Optical Society of
America 1992, Paper FKK3, p. 210.
149. M. Osin´ski and W. Nakwaski, “Thermal crosstalk in two-dimensional
arrays of ver-tical-cavity surface-emitting diode lasers”, Conference
Digest, 13th IEEE Inter-national Semiconductor Laser Conference, Takamatsu,
Japan, 21-25 September, 1992, Paper D-19, pp. 72-73.
150. R. P. Sarzal/a, W. Nakwaski, and M. Osin´ski, “Finite-element
thermal model for proton-implanted top-surface-emitting semiconductor
laser”, Technical Digest, 4th Annual Joint Symposium on Ceramics
and Advanced Materials, Santa Fe, New Mexico, 23 October, 1992, Paper
32, p. 20.
151. J.-M. Luo and M. Osin´ski, “Comparison of side-mode and
peak-mode injection locking characteristics of semiconductor laser”,
LEOS '92 Conference Proceed-ings, 1992 IEEE LEOS Annual Meeting, Boston,
Massachusetts, 16-19 November, 1992, Paper OCTS2.5, pp. 94-95.
152. M. Osin´ski and C.-P. Cherng, “Array mode evolution in
gain-guided diode laser array”, LEOS '92 Conference Proceedings,
1992 IEEE LEOS Annual Meeting, Boston, Massachusetts, 16-19 November,
1992, Paper DLAT11.5, pp. 528-529.
153. W. Nakwaski and M. Osin´ski, “Optimal design of etched-well
GaAs/AlGaAs sur-face-emitting diode lasers”, LEOS '92 Conference
Proceedings, 1992 IEEE LEOS Annual Meeting, Boston, Massachusetts, 16-19
November, 1992, Paper DLAT13.5, pp. 548-549.
154. M. Osin´ski, “Surface-emitting semiconductor lasers and
two-dimensional arrays”, Technical Digest, Telecommunications (NTT
Endowed-Chair) Symposium, To-kyo, Japan, 15-16 December, 1992, pp. 39-42.
155. W. Nakwaski, M. Osin´ski, and J. Cheng, “Spreading resistance
in proton-implanted vertical-cavity surface-emitting diode lasers”,
Applied Physics Letters 61, pp. 3101-3103 (December 1992).
156. P. Zhou, J. Cheng, S. Z. Sun, S. Hersee, M. Osin´ski, J. Zolper,
D. R. Myers, and G. A. Vawter, “Surface-emitting laser-based optical
switching: An update”, Optoe-lectronic Interconnects (R. T. Chen,
Ed.), SPIE International Symposium on La-sers, Sensors, and Applications,
OE/LASE'93, Los Angeles, California, 18-20 January, 1993, Proceedings
of SPIE, Vol. 1849, pp. 298-306.
157. T. Sze, M. Mahbobzadeh, J. Cheng, S. Hersee, M. Osin´ski, S.
R. J. Brueck, and K. J. Malloy, “Profiling of MOCVD and MBE-grown
VCSEL wafers for WDM sources”, Laser Diode Technology and Applications
V (D. Renner, Ed.), SPIE International Symposium on Lasers, Sensors, and
Applications, OE/LASE'93, Los Angeles, California, 18-20 January, 1993,
Proceedings of SPIE, Vol. 1850, pp. 109-114.
158. M. Osin´ski, “Coupled-cavity diode lasers (Invited Paper)”,
Laser Resonators and Coherent Optics: Modeling, Technology, and Applications
(A. Bhowmik, Ed.), SPIE International Symposium on Lasers, Sensors, and
Applications, OE/LASE'93, Los Angeles, California, 18-20 January, 1993,
Proceedings of SPIE, Vol. 1868, pp. 220-234.
159. M. Osin´ski and W. Nakwaski, “Passive heat sinking limits
for large-size arrays of proton-implanted top surface-emitting lasers”,
CLEO '93 Conference on Lasers and Electro-Optics, Baltimore, Maryland,
2-7 May, 1993, Technical Digest Se-ries Vol. 11, Optical Society of America
1993, Paper CTuN5, pp. 150-152.
160. M. Osin´ski and W. Nakwaski, “Effective thermal conductivity
analysis of 1.55 µm InGaAsP/InP vertical-cavity top-surface-emitting
microlasers”, Electronics Let-ters 29, pp. 1015-1016 (May 1993).
161. W. Nakwaski and M. Osin´ski, “Thermal analysis of GaAs-AlGaAs
etched-well sur-face-emitting double-heterostructure lasers with dielectric
mirrors”, Special Is-sue on Semiconductor Lasers, IEEE Journal of
Quantum Electronics 29, pp. 1981-1995 (June 1993).
162. P. Varangis, G. du Crest, and M. Osin´ski, “Transverse
modes in active cylindrical waveguides with step-index profiles”,
Conference Proceedings, LEOS '93 6th An-nual Meeting, San Jose, California,
15-18 November, 1993, Paper FPW4.5, p. 172.
163. W. Nakwaski and M. Osin´ski, “Current spreading and series
resistance in proton-implanted top-surface-emitting lasers”, Conference
Proceedings, LEOS '93 6th Annual Meeting, San Jose, California, 15-18
November, 1993, Paper SCL4.5, pp. 568-569.
164. M. Osin´ski and M. Mojahedie, “Density of confined states
in finite-barrier quantum wells”, Conference Proceedings, LEOS '93
6th Annual Meeting, San Jose, Cali-fornia, 15-18 November, 1993, Paper
SCL11.5, pp. 635-636.
165. M. Osin´ski, W. Nakwaski, and A. Leal, “Thermal resistance
of top-surface-emitting vertical-cavity diode lasers and monolithic two-dimensional
arrays”, Conference Proceedings, LEOS '93 6th Annual Meeting, San
Jose, California, 15-18 November, 1993, Paper SP1.3, pp. 660-661.
166. W. Nakwaski and M. Osin´ski, “Self-consistent thermal-electrical
modeling of pro-ton-implanted top-surface-emitting semiconductor lasers
(Invited Paper)”, Phys-ics and Simulation of Optoelectronic Devices
II (W. W. Chow and M. Osin´ski, Eds.), SPIE International Symposium
on Lasers, Sensors, and Applications, OE/LASE'94, Los Angeles, California,
24-26 January, 1994, Proceedings of SPIE, Vol. 2146, pp. 365-387.
167. M. Osin´ski, W. Nakwaski, and P. M. Varangis, “Analysis
of current spreading and series resistance in GaAs/AlGaAs proton-implanted
top-surface-emitting lasers”, Physics and Simulation of Optoelectronic
Devices II (W. W. Chow and M. Osin´ski, Eds.), SPIE International
Symposium on Lasers, Sensors, and Applica-tions, OE/LASE'94, Los Angeles,
California, 24-26 January, 1994, Proceedings of SPIE, Vol. 2146, pp. 388-396.
168. M. Osin´ski, W. Nakwaski, and A. Leal, “Effective thermal
conductivity analysis of vertical-cavity top-surface-emitting lasers with
semiconducting Bragg mirrors”, Vertical-Cavity Surface-Emitting
Laser Arrays (J. L. Jewell, Ed.), SPIE Interna-tional Symposium on Lasers,
Sensors, and Applications, OE/LASE'94, Los Angeles, California, 27-28
January, 1994, Proceedings of SPIE, Vol. 2147, pp. 85-96.
169. M. Osin´ski, W. Nakwaski, and A. Leal, “Approximate thermal
analysis of vertical-cavity surface-emitting lasers mounted substrate-down”,
Semiconductor Laser Symposium, Yokohama, Japan, March 7, 1994, p. 5.
170. M. Osin´ski, A. Leal, and W. Nakwaski, “Multilayer analysis
of heat-flux spreading in vertical-cavity surface-emitting lasers with
semiconducting Bragg mirrors”, Technical Digest, 10th Interdisciplinary
Laser Science Conference ILS-X, Dallas, Texas, 2-7 October, 1994, Paper
MGG3, p. 68.
171. P. M. Varangis, M. Osin´ski, and W. Nakwaski, “Current
uniformity and series resistance in proton-implanted top-surface-emitting
lasers with highly doped spreading layers”, Technical Digest, 1994
OSA Annual Meeting, Dallas, Texas, 2-7 October, 1994, Paper MZZ4, p. 81.
172. M. Osin´ski, A. Leal, and W. Nakwaski, “Heat-flux spreading
in vertical-cavity sur-face-emitting lasers mounted substrate-down”,
Conference Proceedings, Vol. 1, LEOS'94 7th Annual Meeting, Boston, Massachusetts,
31 October - 3 November, 1994, Paper SL7.5, pp. 288-289.
173. L. Lee, M. Osin´ski, and K. J. Malloy, “Electrical characterization
of blue AlGaN/InGaN/GaN LEDs”, Conference Proceedings, Vol. 1, LEOS'94
7th An-nual Meeting, Boston, Massachusetts, 31 October - 3 November, 1994,
Paper VS3.4, pp. 332-333.
174. M. Osin´ski and W. Nakwaski, “Thermal effects in vertical-cavity
surface-emitting lasers (Invited Paper)”, Special Issue on Vertical-Cavity
Surface-Emitting Lasers, International Journal of High Speed Electronics
and Systems 5, no. 4, pp. 667-730 (December 1994).
175. M. Osin´ski, “Vertical-cavity surface-emitting lasers:
Effects of heating on modal characteristics and threshold current (Invited
Paper)”, Circular-Grating Light-Emitting Sources (S. I. Najafi,
N. Peyghambarian, and M. Fallahi, Eds.), SPIE International Symposium
on Optoelectronic, Microphotonic, and Laser Technol-ogy, Photonics West
'95, San Jose, California, 6 February 1995, Proceedings of SPIE, Vol.
2398, pp. 42-64.
176. M. Osin´ski and W. Nakwaski, “Optimization of 1.3-µm
etched-well surface-emitting laser design”, Physics and Simulation
of Optoelectronic Devices III (M. Osin´ski and W. W. Chow, Eds.),
SPIE International Symposium on Optoelec-tronic, Microphotonic, and Laser
Technology, Photonics West '95, San Jose, California, 6-9 February 1995,
Proceedings of SPIE, Vol. 2399, pp. 372-383.
177. R. P. Sarzal/a, W. Nakwaski, and M. Osin´ski, “Effects
of carrier diffusion on ther-mal properties of proton-implanted top-surface-emitting
lasers (Invited Paper)”, Physics and Simulation of Optoelectronic
Devices III (M. Osin´ski and W. W. Chow, Eds.), SPIE International
Symposium on Optoelectronic, Microphotonic, and Laser Technology, Photonics
West '95, San Jose, California, 6-9 February 1995, Proceedings of SPIE,
Vol. 2399, pp. 583-604.
178. W. Nakwaski and M. Osin´ski, “Current spreading in proton-implanted
vertical-cavity top-surface-emitting lasers”, International Journal
of Optoelectronics 10, no. 2, pp. 119-127 (March-April 1995).
179. W. Nakwaski and M. Osin´ski, “Series electrical resistance
of proton-implanted ver-tical-cavity top-surface-emitting lasers”,
International Journal of Optoelectronics 10, no. 2, pp. 129-137 (March-April
1995).
180. D. L. Barton, B. S. Phillips, M. Osin´ski, C. S. Chern, C.
Yuan, and R. A. Stall, “Diffusion of aluminum during MOCVD gallium
nitride growth on sapphire”, Abstracts, 1995 Spring Meeting of the
Materials Research Society, San Francisco, California, 17-21 April 1995,
Paper E3.10.
181. D. L. Barton, J. Zeller, B. S. Phillips, P.-C. Chiu, S. Askar, D.-S.
Lee, M. Osin´ski, and K. J. Malloy, “Degradation of blue AlGaN/InGaN/GaN
LEDs subjected to high current pulses”, Proceedings of 33rd Annual
IEEE International Reliability Physics Symposium, Las Vegas, Nevada, 4-6
April 1995, Paper 3B.3, pp. 191-199.
182. A. A. Kostrzewski, T. Jannson, V. Katsman, M. Osin´ski, and
R. Chen, “All-optical GaAs switching and modulation for space applications”,
Photonics for Space Environments III (E. W. Taylor, Ed.), SPIE International
Symposium on Aerospace/Defense Sensing & Control and Dual-Use Photonics,
AeroSense '95, Orlando, Florida, 19-20 April 1995, Proceedings of SPIE,
Vol. 2482, pp. 178-183.
183. J. Zeller, D. L. Barton, S. Askar, D.-S. Lee, A.-S. Chu, M. Osin´ski,
and K. J. Malloy, “Optical and electrical characterization of high-brightness
blue InGaN/AlGaN/GaN LEDs”, Technical Digest, CLEO '95 Conference
on Lasers and Electro-Optics, Baltimore, Maryland, 22-26 May, 1995, Technical
Digest Series Vol. 15, Optical Society of America 1995, Paper CMH6, pp.
35-36.
184. W. Nakwaski and M. Osin´ski, “Thermal crosstalk effects
in closely-packed two-dimensional arrays of vertical-cavity surface-emitting
lasers”, Technical Digest, CLEO '95 Conference on Lasers and Electro-Optics,
Baltimore, Maryland, 22-26 May, 1995, Technical Digest Series Vol. 15,
Optical Society of America 1995, Paper CWF1, pp. 186-187.
185. M. Osin´ski and W. Nakwaski, “Thermal analysis of closely-packed
two-dimensional etched-well surface-emitting laser arrays”, Special
Issue on Semiconductor Lasers, IEEE Journal of Selected Topics in Quantum
Electronics 1, pp. 681-696 (June 1995).
186. M. Osin´ski, B. Fluegel, G. Mohs, P.-C. Chiu, B. S. Phillips,
and N. Peygambarian, “Time-resolved photoluminescence in AlGaN/InGaN/GaN
blue light emitting di-odes”, Technical Digest, Tenth International
Conference on Integrated Optics and Optical Fibre Communication IOOC-95,
Hong Kong, 26-30 June, 1995, Vol. 3, Paper ThD3-4, pp. 116-117.
187. E. W. Taylor, D. A. Redman, J. Lee, B. S. Phillips, M. Osin´ski,
G. Savant, and T. Jannson, “Radiation hardness of periodic structures
and related optoelectronic components (Invited Paper)”, Application
and Theory of Periodic Structures (T. Jannson, Ed.), SPIE International
Symposium on Optical Science, Engineering, and Instrumentation, San Diego,
California, 10-12 July 1995, Proceedings of SPIE, Vol. 2532, pp. 88-99.
188. P. G. Eliseev and M. Osin´ski, “Modeling considerations
for UV diode lasers based on GaN”, Technical Digest, Postdeadline
Papers, Semiconductor Lasers: Ad-vanced Devices and Applications, Keystone,
Colorado, 21-23 August 1995, Paper PDP1, pp. PDP1-1 - PDP1-2.
189. G. Mohs, B. Fluegel, H. Giessen, H. Tajalli, N. Peyghambarian, P.-C.
Chiu, B. S. Phillips, and M. Osin´ski, “Photoluminescence
decay dynamics in an InGaN/AlGaN/GaN double-heterostructure blue-light-emitting
diode”, Applied Physics Letters 67, no. 11, pp. 1515-1517 (11 September
1995).
190. M. Osin´ski, D. L. Barton, J. Zeller, P.-C. Chiu, B. S. Phillips,
N. Berg, and C. J. Helms, “Degradation mechanisms in AlGaN/InGaN/GaN
blue light emitting di-odes”, Technical Digest, International Conference
on Silicon Carbide and Related Materials ICSCRM-95, Kyoto, Japan, 18-21
September, 1995, Paper TuA-IV-1, pp. 227-228.
191. M. Osin´ski and P. G. Eliseev, “Radiative recombination
mechanisms in Nichia high-brightness blue LED’s”, Abstracts,
Topical Workshop on III-V Nitrides TWN'95, Nagoya, Japan, 21-23 September,
1995, Paper C-5, pp. C-5.1 - C-5.2.
192. G. Mohs, B. Fluegel, H. Giessen, H. Tajalli, P.-C. Chiu, B. S. Phillips,
M. Osin´ski, and N. Peyghambarian, “Time-resolved photoluminescence
of a blue light emitting diode”, Annual Meeting of the Optical Society
of America, Portland, Oregon, 1995, Paper WUU5, Opt. Photonics News Suppl.,
vol. 6, p. 120.
193. P. G. Eliseev and M. Osin´ski, “Current self-distribution
effect in diode lasers and amplifiers”, Conference Proceedings,
LEOS '95 8th Annual Meeting, San Fran-cisco, California, 30 October -
2 November, 1995, Paper NLO2.4, Vol. 1, pp. 173-174.
194. P. G. Eliseev, M. Osin´ski, B. S. Phillips, P.-C. Chiu, G.
Mohs, B. Fluegel, H. Gießen, and N. Peyghambarian, “Impurity-related
photoluminescence from InGaN LED material”, Conference Proceedings,
LEOS '95 8th Annual Meeting, San Francisco, California, 30 October - 2
November, 1995, Paper OMP4.3, Vol. 2, pp. 104-105.
195. M. Osin´ski and W. Nakwaski, “Thermal analysis of 1.3-µm
etched-well surface-emitting lasers with dielectric mirrors”, Conference
Proceedings, LEOS '95 8th Annual Meeting, San Francisco, California, 30
October - 2 November, 1995, Pa-per IO9.2, Vol. 2, pp. 305-306.
196. R. P. Sarzal/a, W. Nakwaski, and M. Osin´ski, “Finite-element
comprehensive ther-mal modeling of proton-implanted top-surface-emitting
lasers”, Conference Pro-ceedings, LEOS '95 8th Annual Meeting, San
Francisco, California, 30 October - 2 November, 1995, Paper SCL16.3, Vol.
2, pp. 437-438.
197. J. Zeller, P. G. Eliseev, and M. Osin´ski, “Effects of
high current stress on electrical properties of Nichia AlGaN/InGaN/GaN
blue LEDs”, First International Sym-posium on Gallium Nitride and
Related Materials, Boston, Massachusetts, 26 November - 1 December, 1995,
Abstracts, Materials Research Society 1995 Fall Meeting, Paper AAA12.22,
p. 39.
198. M. Osin´ski, B. S. Phillips, N. Berg, C. J. Helms, and D. L.
Barton, “Room tempera-ture life test of Nichia AlGaN/InGaN/GaN blue
light emitting diodes”, First In-ternational Symposium on Gallium
Nitride and Related Materials, Boston, Mas-sachusetts, 26 November - 1
December, 1995, Abstracts, Materials Research So-ciety 1995 Fall Meeting,
Paper AAA12.23, p. 39.
199. W. Nakwaski, R. P. Sarzal/a, and M. Osin´ski, “Computer
simulation of vertical-cav-ity surface-emitting lasers”, Scientific
Bulletin of L/ ódz´ Technical University, Physics 15, no.
738, pp. 145-158 (1995).
200. R. P. Sarzal/a, W. Nakwaski and M. Osin´ski, “Comprehensive
thermal-electrical self-consistent model of proton-implanted top-surface-emitting
lasers”, International Journal of Optoelectronics 10, no. 5, pp.
357-371 (September-October 1995).
201. M. Osin´ski, D. L. Barton, J. Zeller, P. C. Chiu, B. S. Phillips,
C. J. Helms, and N. Berg, “Degradation mechanisms of AlGaN/InGaN/GaN
blue light emitting di-odes”, Silicon Carbide and Related Materials
1995 (S. Nakashima, H. Matsunami, S. Yoshida, and H. Harima, Eds.), Proceedings
of the Sixth International Conference, Kyoto, Japan, 18-21 September,
1995, Institute of Physics Conference Series, Vol. 142, pp. 995-998 (1996).
202. M. Osin´ski, C. J. Helms, N. Berg, D. L. Barton, and B. S.
Phillips, “Room-tempera-ture life test of Nichia AlGaN/InGaN/GaN
blue light emitting diodes”, Gallium Nitride and Related Materials
(F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, Eds.), Boston,
Massachusetts, 27 November - 1 December, 1995, Materials Research Society
Symposium Proceedings, Vol. 395, pp. 931-935 (1996).
203. J. Zeller, P. G. Eliseev, P. Sartori, P. Perlin, and M. Osin´ski,
“Electrical properties of Nichia AlGaN/InGaN/GaN blue LEDs in a
wide current/temperature range”, Gallium Nitride and Related Materials
(F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, Eds.), Boston,
Massachusetts, 27 November - 1 December, 1995, Materials Research Society
Symposium Proceedings, Vol. 395, pp. 937-942 (1996).
204. C. J. Helms, N. H. Berg, D. L. Barton, and M. Osin´ski, “Life
tests of Nichia AlGaN/InGaN/GaN blue-light-emitting diodes”, Fabrication,
Testing, and Reliability of Semiconductor Lasers (M. Fallahi and S. C.
Wang, Eds.), SPIE International Symposium on Lasers and Integrated Optoelectronics
OE/LASE '96, San Jose, California, 31 January - 1 February 1996, Proceedings
of SPIE, Vol. 2683, pp. 74-80.
205. D. L. Barton, M. Osin´ski, C. J. Helms, N. H. Berg, and B.
S. Phillips, “Life tests and failure analysis of AlGaN/InGaN/GaN
blue light emitting diodes”, Physics and Simulation of Optoelectronic
Devices IV (W. W. Chow and M. Osin´ski, Eds.), SPIE International
Symposium on Lasers and Integrated Optoelectronics OE/LASE '96, San Jose,
California, 29 January - 2 February 1996, Proceedings of SPIE, Vol. 2693,
pp. 64-72.
206. P. G. Eliseev, V. A. Smagley, P. Perlin, P. Sartori, and M. Osin´ski,
“Analysis of impurity-related blue emission in Zn-doped GaN/InGaN/AlGaN
double het-erostructure”, Physics and Simulation of Optoelectronic
Devices IV (W. W. Chow and M. Osin´ski, Eds.), SPIE International
Symposium on Lasers and Inte-grated Optoelectronics OE/LASE '96, San Jose,
California, 29 January - 2 Febru-ary 1996, Proceedings of SPIE, Vol. 2693,
pp. 97-108.
207. M. Osin´ski and P. G. Eliseev, “Optimization of active-layer
and cavity design pa-rameters for low-threshold GaN/AlGaN double-heterostructure
diode lasers”, Physics and Simulation of Optoelectronic Devices
IV (W. W. Chow and M. Osin´ski, Eds.), SPIE International Symposium
on Lasers and Integrated Optoelec-tronics OE/LASE '96, San Jose, California,
29 January - 2 February 1996, Proceedings of SPIE, Vol. 2693, pp. 109-120.
208. M. Osin´ski and D. L. Barton, “Degradation mechanisms
in III-N blue light emitting diodes”, Invited Paper, Proceedings
of the International Symposium on Blue La-ser and Light Emitting Diodes,
Chiba, Japan, 5-7 March, 1996, pp. 217-224.
209. M. Osin´ski, P. Perlin, P. Sartori, J. Mu, M. Banas, and P.
G. Eliseev, “Physical properties of Nichia AlGaN/InGaN/GaN blue
light emitting diodes”, Digest, 13th Semiconductor Laser Symposium
(International), Yokohama, Japan, 8 March 1996, p. 8.
210. M. Osin´ski, P. Perlin, P. Sartori, B. S. Phillips, D. L. Barton,
C. J. Helms, and N. H. Berg, “Studies of degradation in Nichia AlGaN/InGaN/GaN
blue light emitting diodes under close to normal operating conditions”,
Symposium on Compound Semiconductor Electronics and Photonics, San Francisco,
California, 8-10 April 1996, Abstracts, Materials Research Society 1996
Spring Meeting, Paper C4.5, p. 48.
211. P. G. Eliseev, V. A. Smagley, and M. Osin´ski, “Analysis
of radiative recombination and optical gain in gallium nitride-based heterostructures”,
Abstracts, Symposium on Compound Semiconductor Electronics and Photonics,
San Francisco, California, 8-10 April 1996, Abstracts, Materials Research
Society 1996 Spring Meeting, Paper C5.21, p. 51.
212. W. Nakwaski, R. P. Sarzal/a, and M. Osin´ski, “Investigations
of thermal properties of surface- and edge-emitting diode lasers and their
arrays”, Proceedings of the I Seminar Termik’96 Thermal Problems
in Electronics, Szklarska Pore,ba, Poland, 13-15 May 1996, pp. 129-135
(in Polish).
213. P. G. Eliseev, V. A. Smagley, and M. Osin´ski, “Threshold
current density in opti-mized UV diode lasers based on gallium nitride”,
Technical Digest, CLEO '96 Conference on Lasers and Electro-Optics, Vol.
9, 1996 OSA Technical Digest Series, Anaheim, California, 2-7 June, 1996,
Paper CThP4, pp. 457-458.
214. W. Nakwaski and M. Osin´ski, “Optimization of 1.3-µm
InGaAsP/InP vertical-cavity surface-emitting diode lasers”, Program
and Abstracts, 5th Polish-Lithuanian Workshop on the Semiconductor Physics
and Technology, Vilnius, Lithuania, 20-21 June, 1996, pp. 6-7.
215. R. P. Sarzal/a, W. Nakwaski, and M. Osin´ski, “Impact
of radial carrier diffusion within the active region of the semiconductor
surface-emitting laser on heat gen-eration and sinking processes during
its continuous wave operation”, Program and Abstracts, 5th Polish-Lithuanian
Workshop on the Semiconductor Physics and Technology, Vilnius, Lithuania,
20-21 June, 1996, pp. 8-9.
216. M. Osin´ski, D. L. Barton, C. J. Helms, N. H. Berg, and P.
Perlin, “Failure analysis of AlGaN/InGaN/GaN blue light emitting
diodes degraded during life testing”, Technical Program with Abstracts,
38th Electronic Materials Conference, Santa Barbara, California, 26-28
June, 1996, Paper T7, p. 43.
217. P. Perlin, J. Mu, P. G. Eliseev, P. Sartori, and M. Osin´ski,
“Characteristics of p-n junctions in GaN-based light emitting diodes”,
Technical Program with Abstracts, 38th Electronic Materials Conference,
Santa Barbara, California, 26-28 June, 1996, Paper W8, p. 51.
218. A. G. Glebov, P. G. Eliseev, and M. Osin´ski, “Emission-induced
current crowding in diode lasers: Criterion and numerical modeling”,
Technical Digest, XX Inter-national Quantum Electronics Conference IQEC
'96, Sydney, Australia, 14-19 July, 1996, Paper WL89, p. 180.
219. V. A. Smagley, P. G. Eliseev, and M. Osin´ski, “Theory
of radiative processes in GaN-based laser structures”, Technical
Digest, XX International Quantum Elec-tronics Conference IQEC '96, Sydney,
Australia, 14-19 July, 1996, Paper FL2, pp. 272-273.
220. P. Perlin, P. Sartori, P. G. Eliseev, V. A. Smagley, M. Banas, and
M. Osin´ski, “Unusual physical properties of blue light emitting
diodes based on InGaN:Zn”, Abstracts, 23rd International Conference
on the Physics of Semiconductors, Berlin, Germany, 21-26 July 1996, Paper
MoP-189.
221. P. Perlin, P. G. Eliseev, M. Osin´ski, M. Banas, and P. Sartori,
“Unusual physical properties of blue light emitting diodes based
on InGaN:Zn”, Conference Proceedings, 23rd International Conference
on the Physics of Semiconductors, Berlin, Germany, 21-26 July 1996, Vol.
4, Paper VI.D.6, pp. 2873-2876, World Scientific 1996.
222. M. Osin´ski, V. A. Smagley, and P. G. Eliseev, “Cavity
design for low-threshold GaN-based UV diode lasers”, Invited Paper,
Abstracts, High Speed Opto-Electronics for Communications II, Snowbird,
Utah, 11-15 August 1996, Session I, Paper 6.
223. M. Osin´ski, J. Zeller, P.-C. Chiu, B. S. Phillips, and D.
L. Barton, “AlGaN/InGaN/ GaN blue LED degradation under pulsed current
stress”, Applied Physics Letters 69, no. 7, pp. 898-900 (12 August
1996).
224. M. Osin´ski, D. L. Barton, C. J. Helms, P. Perlin, N. H. Berg,
P. Sartori, and B. S. Phillips, “Studies of degradation in Nichia
AlGaN/InGaN/GaN blue light emitting diodes under close to normal operating
conditions”, Compound Semiconductor Electronics and Photonics (R.
J. Shul, S. J. Pearton, F. Ren, and C.-S. Wu, Eds.), San Francisco, California,
8-10 April 1996, Materials Research Society Symposium Proceedings, Vol.
421, pp. 183-188.
225. P. G. Eliseev, V. A. Smagley, and M. Osin´ski, “Analysis
of radiative recombination and optical gain in gallium nitride-based heterostructures”,
Compound Semi-conductor Electronics and Photonics (R. J. Shul, S. J. Pearton,
F. Ren, and C.-S. Wu, Eds.), San Francisco, California, 8-10 April 1996,
Materials Research Society Symposium Proceedings, Vol. 421, pp. 419-424.
226. W. Nakwaski and M. Osin´ski, “Thermally conductive dielectric
mirrors as a possible solution enabling continuous wave operation of 1.3-µm
vertical-cavity surface-emitting lasers at room temperature”, Electron
Technology 29, no. 2/3, pp. 79-82 (1996).
227. R. P. Sarzal/a, W. Nakwaski, and M. Osin´ski, “Carrier
diffusion in the active region of vertical-cavity surface-emitting lasers
and its influence on their operation”, Electron Technology 29, no.
2/3, pp. 83-87 (1996).
228. P. Perlin, M. Osin´ski, P. G. Eliseev, V. A. Smagley, J. Mu,
M. Banas, and P. Sartori, "Low-temperature study of current and electroluminescence
in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes",
Applied Physics Letters 69, no. 12, pp. 1680-1682 (16 September 1996).
229. W. L. Johnson, M. Osin´ski, and W. Nakwaski, “Parallelization
strategy in modeling of two-dimensional arrays of semiconductor lasers
on an IBM SP2 supercomputer”, Conference Proceedings, High Performance
Computing in Europe on IBM Platforms SUP’EUR 96, Kraków,
Poland, 8-11 September, 1996, pp. 215-220.
230. M. Osin´ski and D. L. Barton, “Degradation mechanisms
in AlGaN/InGaN/GaN light sources”, Invited Paper, Abstracts, The
8th Seoul International Symposium on the Physics of Semiconductors and
Applications - 1996, Seoul, Korea, 21-22 October, 1996, Paper A5, p. 5.
231. P. Perlin, M. Osin´ski, and P. G. Eliseev, “Optical and
electrical characteristics of single-quantum-well InGaN light emitting
diodes”, Abstracts, 1996 Fall Meeting of the Materials Research
Society, Boston, Massachusetts, 2-6 December, 1996, Paper N9.38, p. 347.
232. M. Osin´ski, P. Perlin, P. G. Eliseev, G. Liu, and D. L. Barton,
“Degradation of single-quantum-well InGaN green light emitting diodes
under high electrical stress”, Abstracts, 1996 Fall Meeting of the
Materials Research Society, Boston, Massachusetts, 2-6 December, 1996,
Paper N9.39, p. 347.
233. I. V. Akimova, P. G. Eliseev, M. A. Osin´ski, and P. Perlin,
“Spontaneous emission from a quantum-well GaN/InGaN/AlGaN heterostructure
at high pump currents”, Kvantovaya Elektronika 23, no. 12, pp. 1069-1071
(December 1996) (in Russian). English translation in: Quantum Electronics
26, no. 12, pp. 1039-1041 (December 1996).
234. M. Osin´ski, P. G. Eliseev, V. A. Smagley, P. Uppal, and K.
J. Ritter, “Analysis of III-V semiconductor materials for long-wavelength
laser applications”, U.S. Army Research Laboratory, Proceedings
of the 1997 Sensors and Electron Devices Symposium, College Park, Maryland,
14-15 January 1997, published by Environmental Research Institute of Michigan,
Ann Arbor, Michigan, pp. 7-10.
235. M. Osin´ski, A. G. Glebov, P. G. Eliseev, and G. Simonis, “Three-dimensional
modeling of vertical-cavity surface-emitting semiconductor lasers”,
U.S. Army Research Laboratory, Proceedings of the 1997 Sensors and Electron
Devices Symposium, College Park, Maryland, 14-15 January 1997, pp. 87-90.
236. M. Osin´ski and P. G. Eliseev, “Radiative recombination
mechanisms in high brightness Nichia blue LEDs”, Special Issue on
III-V Nitrides, Solid-State Elec-tronics 41, no. 2, pp. 155-157 (1997).
237. V. A. Smagley, P. G. Eliseev, and M. Osin´ski, “Comparison
of models for calcula-tion of optical gain in gallium nitride”,
Physics and Simulation of Optoelectronic Devices V (M. Osin´ski
and W. W. Chow, Eds.), SPIE International Symposium on Integrated Devices
and Applications Optoelectronics ’97, San Jose, California, 10-14
February 1997, Proceedings of SPIE, Vol. 2994, pp. 129-140.
238. P. G. Eliseev, A. G. Glebov, and M. Osin´ski, “Modeling
of current crowding ac-companying optical filament formation in semiconductor
lasers and amplifiers”, Physics and Simulation of Optoelectronic
Devices V (M. Osin´ski and W. W. Chow, Eds.), SPIE International
Symposium on Integrated Devices and Applications Optoelectronics ’97,
San Jose, California, 10-14 February 1997, Proceedings of SPIE, Vol. 2994,
pp. 580-590.
239. M. Osin´ski, P. Perlin, P. G. Eliseev, and J. Furioli, “Current
transport and emission mechanisms in high-brightness green InGaN/AlGaN/GaN
single-quantum-well light-emitting diodes”, Light-Emitting Diodes:
Research, Manufacturing, and Applications (E. F. Schubert, Ed.), SPIE
International Symposium on Semiconductor Lasers and Photodetectors OE/LASE
'97, San Jose, California, 13-14 February 1997, Proceedings of SPIE, Vol.
3002, pp. 15-25.
240. M. Osin´ski, D. L. Barton, C. J. Helms, N. H. Berg, and P.
Perlin, “Life testing and failure analysis of GaN/AlGaN/InGaN light
emitting diodes (Invited Paper)”, Fabrication, Testing, and Reliability
of Semiconductor Lasers II (M. Fallahi and S. C. Wang, Eds.), SPIE International
Symposium on Semiconductor Lasers and Photodetectors OE/LASE '97, San
Jose, California, 13-14 February 1997, Proceedings of SPIE, Vol. 3004,
pp. 113-120.
241. P. Perlin, M. Osin´ski, and P. G. Eliseev, “Optical and
electrical characteristics of single-quantum-well InGaN light emitting
diodes”, III-V Nitrides (F. A. Ponce, T. D. Moustakas, I. Akasaki,
and B. A. Monemar, Eds.), Boston, Massachusetts, 2-6 December, 1996, Materials
Research Society Symposium Proceedings, Vol. 449, pp. 1173-1178 (1997).
242. M. Osin´ski, P. Perlin, P. G. Eliseev, G. Liu, and D. L. Barton,
“Degradation of single-quantum-well InGaN green light emitting diodes
under high electrical stress”, III-V Nitrides (F. A. Ponce, T. D.
Moustakas, I. Akasaki, and B. A. Monemar, Eds.), Boston, Massachusetts,
2-6 December, 1996, Materials Research Society Symposium Proceedings,
Vol. 449, pp. 1179-1184 (1997).
243. P. G. Eliseev, P. Perlin, J. Furioli, P. Sartori, J. Mu, and M. Osin´ski,
“Tunneling current and electroluminescence in InGaN:Zn,Si/AlGaN/GaN
blue light emitting diodes”, Special Issue on III-V Nitrides and
SiC, Journal of Electronic Materials 26, no. 3, pp. 311-319 (March 1997).
244. D. L. Barton, M. Osin´ski, P. Perlin, C. J. Helms, and N. H.
Berg, “Life tests and failure mechanisms of GaN/AlGaN/InGaN light
emitting diodes”, Proceedings of 5th Annual IEEE International Reliability
Physics Symposium, Denver, Colorado, 8-10 April 1997, Paper 5A.7, pp.
276-281.
245. P. G. Eliseev, A. G. Glebov, and M. Osin´ski, “Current
self-distribution effect in diode lasers: Analytic criterion and numerical
study”, Special Issue on Semiconductor Lasers, IEEE Journal of Selected
Topics in Quantum Electronics 3, no. 2, pp. 499-506 (April 1997).
246. K. L. Lear, H. Q. Hou, J. J. Banas, B. E. Hammons, J. Furioli, and
M. Osin´ski, “Vertical cavity lasers on p-doped substrates”,
Electronics Letters 33, no. 9, pp. 783-784 (24 April 1997).
247. P. G. Eliseev, P. Perlin, J. Furioli, and M. Osin´ski, “Characterization
and modeling of electroluminescence from single-quantum-well InGaN/AlGaN/GaN
green-light-emitting diodes”, Technical Digest, CLEO '97 Conference
on Lasers and Electro-Optics, Baltimore, Maryland, 18-23 May, 1997, Vol.
11, 1997 OSA Technical Digest Series, Paper CTuO3, pp. 110-111.
248. P. G. Eliseev, A. G. Glebov, and M. Osin´ski, “Analysis
of current self-distribution induced by self-focusing filamentation in
laser diode”, Technical Digest, CLEO '97 Conference on Lasers and
Electro-Optics, Baltimore, Maryland, 18-23 May, 1997, Vol. 11, 1997 OSA
Technical Digest Series, Paper CWF21, p. 238.
249. K. L. Lear, H. Q. Hou, J. J. Banas, B. E. Hammons, J. Furioli, and
M. Osin´ski, “Common anode vertical-cavity surface-emitting
lasers on p-doped substrates”, Technical Digest, CLEO '97 Conference
on Lasers and Electro-Optics, Baltimore, Maryland, 18-23 May, 1997, Vol.
11, 1997 OSA Technical Digest Series, Paper CWM7, pp. 292-293.
250. M. Osin´ski and D. L. Barton, “Degradation mechanisms
in AlGaN/InGaN/GaN light sources”, Journal of the Korean Physical
Society 30, Supplement, pp. S13-S20 (June 1997).
251. P. Perlin, V. Iota, B. A. Weinstein, P. Wis´niewski, T. Suski,
P. G. Eliseev, and M. Osin´ski, “Influence of pressure on
photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells”,
Applied Physics Letters 70, no. 22, pp. 2993-2995 (2 June 1997).
252. M. Osin´ski, P. Perlin, H. Schöne, A. H. Paxton, and E.
W. Taylor, “Effects of proton irradiation on AlGaN/InGaN/GaN green
light emitting diodes”, Electronics Letters 33, no. 14, pp. 1252-1254
(3 July 1997).
253. M. Osin´ski, P. G. Eliseev, P. Perlin, V. A. Smagley, J. Furioli,
and J.-H. Lee, “Anomalous temperature behavior of optical emission
from Nichia AlGaN/InGaN/GaN single-quantum-well LEDs”, Invited Paper,
Record of the 16th Electronic Materials Symposium, Minoo, Osaka, Japan,
9-11 July, 1997, Paper SB6, pp. 273-276.
254. P. G. Eliseev, M. Osin´ski, and P. Perlin, “Anomalous
spectral shifts and band-tailing in GaN-based quantum-well devices”,
Technical Digest, CLEO/Pacific Rim '97, The Pacific Rim Conference on
Lasers and Electro-Optics, Chiba, Japan, 14-18 July, 1997, Paper FO4,
p. 287.
255. M. Osin´ski and P. G. Eliseev, “Radiative recombination
mechanisms in Nichia high-brightness blue LED’s”, Proceedings
of the Topical Workshop on III-V Nitrides (TWN'95) (I. Akasaki, K. Onabe,
Eds.), Nagoya, Japan, 21-23 September, 1995, Pergamon 1997, pp. 57-59.
256. W. Nakwaski and M. Osin´ski, “Available output of two-dimensional
surface-emitting laser arrays”, Optical and Quantum Electronics
29, pp. 639-649 (June 1997).
257. M. Osin´ski, “Short-wavelength visible light emitters
based on group-III nitrides and their potential for space applications”,
Critical Review, Advancement of Photonics for Space (E. W. Taylor, Ed.),
SPIE International Symposium on Optical Science, Engineering, and Instrumentation
SD97, San Diego, California, 28-29 July 1997, SPIE Critical Reviews of
Optical Science and Technology, Vol. CR66, pp. 93-120.
258. E. W. Taylor, A. H. Paxton, H. Schöne, J. H. Comtois, A. D.
Sanchez, M. A. Michalicek, J. E. Winter, S. J. McKinney, M. Osin´ski,
P. Perlin, R. F. Carson, J. P. G. Bristow, J. Lehman, and M. K. Hibbs
Brenner, “Radiation induced effects research in emerging photonic
technologies: vertical cavity surface emitting lasers, GaN light emitting
diodes and micro electromechanical devices”, Photonics for Space
Environments V (E. W. Taylor, Ed.), SPIE International Symposium on Optical
Science, Engineering, and Instrumentation SD97, San Diego, California,
30 July 1997, Proceedings of SPIE, Vol. 3124, pp. 9-21.
259. P. G. Eliseev, P. Perlin, J. Lee, and M. Osin´ski, “"Blue"
temperature-induced shift and band-tail emission in InGaN-based light
sources”, Applied Physics Letters 71, no. 5, pp. 569-571 (4 August
1997).
260. W. Nakwaski and M. Osin´ski, “On the thermal resistance
of vertical-cavity surface-emitting lasers”, Optical and Quantum
Electronics 29, no. 9, pp. 883-892 (September 1997).
261. M. Osin´ski, D. L. Barton, P. Perlin, and J. Lee, “Effects
of high electrical stress on GaN/InGaN/AlGaN single-quantum-well light-emitting
diodes”, Proceedings of the Second International Conference on Nitride
Semiconductors ICNS’97, Tokushima, Japan, 27-31 October, 1997, Paper
P1-3, pp. 40-41.
262. M. Osin´ski, P. Perlin, P. G. Eliseev, J. Lee, and V. A. Smagley,
“Comprehensive studies of light emission from GaN/InGaN/AlGaN single-quantum-well
structures”, Proceedings of the Second International Conference
on Nitride Semiconductors ICNS’97, Tokushima, Japan, 27-31 October,
1997, Paper F3-4, pp. 508-509.
263. P. Perlin, B. A. Weinstein, N. E. Christensen, I. Gorczyca, V. Iota,
T. Suski, P. Wis´niewski, M. Osin´ski, and P. G. Eliseev,
“Cubic InN inclusions as the cause for the unusually weak pressure
shift of the luminescence in InGaN”, Abstracts, 1997 Fall Meeting
of the Materials Research Society, Boston, Massachusetts, 1-5 December
1997, Paper D5.2, p. 89.
264. H. P. Maruska, M. Lioubtchenko, B. Molnar, M. Osin´ski, P.
Perlin, and S. J. Pearton, “Introduction of ions into wide band
gap semiconductors (Invited Paper)”, Abstracts, 1997 Fall Meeting
of the Materials Research Society, Boston, Massachusetts, 1-5 December
1997, Paper E4.1, p. 144.
265. W. Nakwaski, W. L. Johnson, and M. Osin´ski, “Methodology
of parallelization used in simulation of thermal behaviour of large two-dimensional
arrays of semiconductor lasers”, Electron Technology 30, no. 4,
pp. 287-297 (1997).
266. P. G. Eliseev, I. V. Akimova, P. Perlin, and M. Osin´ski, “Comparative
study of spectral broadening in InGaAs and InGaN quantum wells”,
Abstracts, III All-Russia Conference on Physics of Semiconductors, Moscow,
Russia, 2-6 December, 1997, p. 88 (in Russian).
267. D. L. Barton, M. Osin´ski, P. Perlin, C. J. Helms, and N. H.
Berg, “Life tests and failure mechanisms of GaN/AlGaN/InGaN light
emitting diodes”, Light-Emitting Diodes: Research, Manufacturing,
and Applications II (E. F. Schubert, Ed.), SPIE International Symposium
on Integrated Devices and Applications Optoelectronics ’98, San
Jose, California, 28-29 January 1998, SPIE Proceedings, Vol. 3279, pp.
17-27.
268. V. A. Smagley, G. A. Smolyakov, P. G. Eliseev, M. Osin´ski,
and A. J. Przekwas, “Current self-distribution effect in vertical-cavity
surface-emitting semiconductor lasers”, Physics and Simulation of
Optoelectronic Devices VI (M. Osin´ski, P. Blood, and A. Ishibashi,
Eds.), SPIE International Symposium on Integrated Devices and Applications
Optoelectronics ’98, San Jose, California, 26-30 January 1998, Proceedings
of SPIE, Vol. 3283, pp. 171-182.
269. E. Yu, M. Osin´ski, W. Nakwaski, M. Turowski, and A. J. Przekwas,
“Thermal crosstalk in arrays of proton-implanted top-surface emitting
lasers”, Physics and Simulation of Optoelectronic Devices VI (M.
Osin´ski, P. Blood, and A. Ishibashi, Eds.), SPIE International
Symposium on Integrated Devices and Applications Optoelectronics ’98,
San Jose, California, 26-30 January 1998, Proceedings of SPIE, Vol. 3283,
pp. 384-395.
270. M. Osin´ski, V. A. Smagley, G. A. Smolyakov, P. G. Eliseev,
and G. Simonis, “Electro-thermal modeling of oxide-confined vertical-cavity
surface-emitting semiconductor lasers and large-size two-dimensional arrays”,
Advanced Sensors Consortium, Proceedings of the 2nd Annual FedLab Symposium,
College Park, Maryland, 2-6 February 1998, pp. 69-73.
271. M. Osin´ski, P. G. Eliseev, P. Uppal, and K. J. Ritter, “Design
of unipolar mid-infrared lasers in the GaN/AlN/InN material system”,
Advanced Sensors Consortium, Proceedings of the 2nd Annual FedLab Symposium,
College Park, Maryland, 2-6 February 1998, pp. 74-78.
272. A. A. Leal, M. Osin´ski, and E. Conforti, “Effects of
a thermal-dependent electric field penetration depth on threshold behavior
of surface-emitting lasers”, Microwave and Optical Technology Letters
17, no. 2, pp. 94-97 (5 Feb. 1998).
273. P. Perlin, B. A. Weinstein, N. E. Christensen, I. Gorczyca, V. Iota,
T. Suski, P. Wis´niewski, M. Osin´ski, and P. G. Eliseev,
“Cubic InN inclusions as the cause for the unusually weak pressure
shift of the luminescence in InGaN”, Nitride Semiconductors (F.
A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, and S. Strite, Eds.),
Boston, Massachusetts, 1-4 December 1997, Materials Research Society Symposium
Proceedings, Vol. 482, pp. 697-702, Warrendale, Pennsylvania 1998.
274. H. P. Maruska, M. Lioubtchenko, T. G. Tetreault, M. Osin´ski,
S. J. Pearton, M. Schurman, R. Vaudo, S. Sakai, Q. Chen, and R. J. Shul,
“Introduction of ions into wide band gap semiconductors”,
Power Semiconductor Materials and Devices (S. J. Pearton, R. J. Shul,
E. Wolfgang, F. Ren, and S. Tenconi, Eds.), Boston, Massachusetts, 1-4
December 1997, Materials Research Society Symposium Proceedings, Vol.
483, pp. 333-344, Warrendale, Pennsylvania 1998.
275. A. A. Leal, M. Osin´ski, and E. Conforti, “Multilayer
analysis of anisotropic heat flux in vertical-cavity surface-emitting
lasers with quarter-wave semiconducting mirrors”, IEEE Transactions
on Microwave Theory and Techniques 46, no. 3, pp. 208-214 (March 1998).
276. M. Osin´ski, P. Perlin, P. G. Eliseev, J. Lee, and V. A. Smagley,
“Comprehensive studies of light emission from GaN/InGaN/AlGaN single-quantum-well
structures”, Nitride Semiconductors 1997, Proceedings of the Second
International Conference on Nitride Semiconductors (K. Hiramatsu, K. Kishino,
S. Nakamura, and H. Amano, Eds.), Special Issue of Journal of Crystal
Growth 189/190, pp. 803-807 (1998), North-Holland, Amsterdam 1998.
277. M. Osin´ski, D. L. Barton, P. Perlin, and J. Lee, “Effects
of high electrical stress on GaN/InGaN/AlGaN single-quantum-well light-emitting
diodes”, Nitride Semiconductors 1997, Proceedings of the Second
International Conference on Nitride Semiconductors (K. Hiramatsu, K. Kishino,
S. Nakamura, and H. Amano, Eds.), Special Issue of Journal of Crystal
Growth 189/190, pp. 808-811 (1998), North-Holland, Amsterdam 1998.
278. D. L. Barton, M. Osin´ski, P. Perlin, P. G. Eliseev, and J.
Lee, “Degradation of single-quantum well InGaN green light emitting
diodes under high electrical stress”, Proceedings of the 6th Annual
IEEE International Reliability Physics Symposium, Reno, Nevada, 30 March
- 2 April, 1998, Paper 6A.3, pp. 119-123.
279. S. Tottori, J. Wang, H. Sato, Y. Ishikawa, T. Sugahara, K. Yamashita,
D. H. Youn, M. Osin´ski, and S. Sakai, “Sublimation growth
and characterization of thick GaN layers on SiO2/GaN mask patterns”,
Abstracts, 45th Spring Meeting, 1998, of the Japan Society of Applied
Physics and Related Sciences, Tokyo, Japan, 1-4 April, 1998, p. 188.
280. M. Osin´ski, J. Lee, and D. L. Barton, “Role of nanopipes
in degradation of AlGaN/InGaN/GaN devices operating at high voltage”,
Abstracts, 1998 Spring Meeting of the Materials Research Society, San
Francisco, California, 13-17 April 1998, Paper F4.12, p. 113.
281. M. Osin´ski, D. L. Barton, C. J. Helms, N. H. Berg, and C.
H. Seager, “Life testing and reliability behavior of GaN/InGaN/AlGaN
light-emitting diodes”, Abstracts, 1998 Spring Meeting of the Materials
Research Society, San Francisco, California, 13-17 April 1998, Paper DD9.2,
p. 462.
282. M. Osin´ski, P. G. Eliseev, P. Perlin, J. Lee, H. Sato, T.
Sugahara, Y. Naoi, and S. Sakai, “Anomalous temperature behavior
and band tailing in InGaN/GaN heterostructures grown on sapphire by MOCVD”,
Technical Digest, CLEO '98 Conference on Lasers and Electro-Optics, San
Francisco, California, 3-8 May, 1998, Paper CWH5, pp. 276-277.
283. B. A. Weinstein, P. Perlin, N. E. Christensen, I. Gorczyca, V. Iota,
T. Suski, P. Wis´niewski, M. Osin´ski, and P. G. Eliseev,
“Cubic InN inclusions: proposed explanation for the small pressure
shift anomaly of the luminescence in InGaN-based quantum wells”,
Solid-State Communications, vol. 106 (9), pp. 567-571, June 1998.
284. M. Osin´ski and D. L. Barton, “Degradation mechanisms
in AlGaN/InGaN/GaN light-emitting diodes and diode lasers”, Program
and Abstracts, Tenth International Conference on Semiconducting and Insulating
Materials (SIMC-X), Berkeley, California, 1-5 June, 1998, Paper FR1-2.
285. M. Turowski, E. Yu, A. Przekwas, W. Nakwaski, and M. Osin´ski,
“3D simulation of thermal phenomena in arrays of vertical-cavity
surface-emitting lasers (VCSELs)”, Proceedings of 5th International
Conference on Mixed Design of Integrated Circuits and Systems, MIXDES'98,
§Lódz´, Poland, 18-20 June 1998, pp. 177 - 182.
286. J. Wang, S. Tottori, M. S. Hao, H. Sato, S. Sakai, and M. Osin´ski,
“Epitaxial lateral overgrowth of GaN by sublimation method and by
MOCVD”, Optoelectronic Materials and Devices (M. Osin´ski
and Y.-K. Su, Eds.), SPIE Photonics Taiwan '98 Symposium, Taipei, Taiwan,
9-11 July, 1998, Proceedings of SPIE, Vol. 3419, pp. 7-15.
287. M. Osin´ski, V. A. Smagley, G. A. Smolyakov, T. Svimonishvili,
P. G. Eliseev, and G. Simonis, “Three-dimensional simulation of
oxide-confined vertical-cavity surface-emitting semiconductor lasers”,
Optoelectronic Materials and Devices (M. Osin´ski and Y.-K. Su,
Eds.), SPIE Photonics Taiwan '98 Symposium, Taipei, Taiwan, 9-11 July,
1998, Proceedings of SPIE, Vol. 3419, pp. 196-207.
288. M. Osin´ski, J. Lee, and D. L. Barton, “Role of nanopipes
in degradation of AlGaN/ InGaN/GaN devices operating at high voltage”,
Wide-Bandgap Semiconductors for High Power, High Frequency, and High Temperature
(S. DenBaars, J. Palmour, M. Shur, and M. Spencer, Eds.), San Francisco,
California, 13-15 April 1998, Materials Research Society Symposium Proceedings,
Vol. 512, pp. 205-210.
289. P. G. Eliseev, G. A. Smolyakov, and M. Osin´ski, “Ghost
modes and their signature in InGaN diode laser spectra”, Proceedings
of the 2nd International Symposium on Blue Laser and Light Emitting Diodes
(2nd ISBLLED), Kisarazu, Japan, 29 September - 2 October, 1998, Paper
Th-10, pp. 413-416.
290. M. Osin´ski and D. L. Barton, “Accelerated life testing
of GaN/InGaN/AlGaN blue light-emitting diodes and high temperature failure
mechanism”, Proceedings of the 2nd International Symposium on Blue
Laser and Light Emitting Diodes (2nd ISBLLED), Kisarazu, Japan, 29 September
- 2 October, 1998, Paper Th-P26, pp. 548-551.
291. M. Osin´ski, D. L. Barton, C. J. Helms, N. H. Berg, and C.
H. Seager, “Life testing and reliability behavior of GaN/InGaN/AlGaN
light-emitting diodes”, Reliability of Photonics Materials and Structures
(E. Suhir, M. Fukuda, and C. Kurkjian, Eds.), San Francisco, California,
13-16 April 1998, Materials Research Society Symposium Proceedings, Vol.
531, pp. 385-390.
292. I. V. Akimova, P. G. Eliseev, and M. Osin´ski, “High-temperature
properties of InGaN light-emitting diodes”, Kvantovaya Elektronika
25, no. 11,. pp. 1013-1016 (November 1998) (in Russian); English translation
in: Quantum Electronics 28, no. 11, pp. 987-990 (November 1998).
293. D. L. Barton, M. Osin´ski, J. Lee, C. J. Helms, and N. H. Berg,
“Life tests and failure mechanisms of GaN/AlGaN/InGaN light emitting
diodes”, Invited Paper, Conference Proceedings, LEOS ’98 11th
Annual Meeting, Orlando, Florida, 1-4 December 1998, Paper FU3, pp. 440-441.
294. G. A. Smolyakov, V. A. Smagley, W. Nakwaski, P. G. Eliseev, and M.
Osi_ski, “Design of InGaN/GaN/AlGaN VCSELs using the effective frequency
method”, Physics and Simulation of Optoelectronic Devices VII (P.
Blood, A. Ishibashi, and M. Osi_ski, Eds.), Optoelectronics ’99
- SPIE International Symposium on Integrated Devices and Applications,
San Jose, California, 25-29 January 1999, Proceedings of SPIE, Vol. 3625,
pp. 324-335.
295. M. Osi_ski, V. A. Smagley, T. Svimonishvili, and G. A. Smolyakov,
“3D electro-thermal simulation of intracavity-contacted oxide-confined
VCSELs operating at room-temperature and at 77 K”, Physics and Simulation
of Optoelectronic Devices VII (P. Blood, A. Ishibashi, and M. Osi_ski,
Eds.), Optoelectronics ’99 - SPIE International Symposium on Integrated
Devices and Applications, San Jose, California, 25-29 January 1999, Proceedings
of SPIE, Vol. 3625, pp. 371-382.
296. E. Yu, H. Q. Yang, A. Przekwas, W. Nakwaski, and M. Osin´ski,
“Multi-disciplinary design of VCSEL devices and compact optoelectronic
packages”, Physics and Simulation of Optoelectronic Devices VII
(P. Blood, A. Ishibashi, and M. Osin´ski, Eds.), Optoelectronics
’99 - SPIE International Symposium on Integrated Devices and Applications,
San Jose, California, 25-29 January 1999, Proceedings of SPIE, Vol. 3625,
pp. 383-394.
297. J. Wang, R. S. Q. Fareed, M. Hao, S. Mahanty, S. Tottori, Y. Ishikawa,
T. Sugahara, Y. Morishima, K. Nishino, M. Osi_ski, and S. Sakai, “Lateral
overgrowth mechanisms and microstructural characteristics of bulk-like
GaN layers grown by sublimation method”, Journal of Applied Physics
85, no. 3, pp. 1895-1899 (1 February 1999).
298. G. A. Smolyakov, P. G. Eliseev, and M. Osin´ski, “Design
limitations for InGaN/AlGaN/GaN lasers imposed by resonant mode coupling”,
Technical Digest, Nineteenth Annual Conference on Lasers and Electro-Optics
CLEO ’99, Baltimore, Maryland, 23-28 May 1999, Paper CTuU5, p. 203.
299. P. G. Eliseev, G. A. Smolyakov, and M. Osin´ski, “´Ghost`
modes and resonant effects in AlGaN/InGaN/GaN lasers”, Special Issue
on Semiconductor Lasers, IEEE Journal of Selected Topics in Quantum Electronics
5, no. 3, pp. 771-779 (May/June 1999).
300. M. Osi_ski, “Green, blue, and beyond - current status and future
prospects for short-wavelength diode laser development (Invited Paper)”,
Proceedings of 8th International Plastic Optical Fibers (POF) Conference,
Makuhari Messe, Chiba, Japan, 14-16 July, 1999, pp. 78-84.
301. D. L. Barton, M. Osi_ski, P. Perlin, P. G. Eliseev, and J. Lee, “Single-quantum
well InGaN green light emitting diode degradation under high electrical
stress”, Invited Paper, Microelectronics Reliability 39, no. 8,
pp. 1219-1227 (August 1999).
302. E. W. Taylor, M. Osin´ski, M. D. Watson, T. Svimonishvili,
S. D. Pearson, and J. S. Zetts, “Overview of photonic materials
and components for application in space environments”, Photonics
for Space and Enhanced Radiation Environments (E. W. Taylor and F. Berghmans,
Eds.), EOS/SPIE Symposium on Remote Sensing Europto '99, Florence, Italy,
20-24 Sept., 1999, Proceedings of SPIE, Vol. 3872, pp. 72-83.
303. M. Osi_ski, W. E. Thompson, A. Sarangan, and A. P. Bogatov, “Theory
of angled grating semiconductor lasers: Comparison of an analytical model
and BPM simulation”, Advanced High-Power Lasers (M. Osi_ski, H.
T. Powell, and K. Toyoda, Eds.), International Forum on Advanced High-Power
Lasers and Applications AHPLA ‘99, Osaka, Japan, 1-5 Nov. 1999,
Proceedings of SPIE, Vol. 3889, pp. 108-119.
304. M. Osi_ski, P. G. Eliseev, J. Lee, V. A. Smagley, T. Sugahara, and
S. Sakai, “Optical properties of InGaN grown by MOCVD on sapphire
and on bulk GaN”, Design, Fabrication, and Characterization of Photonic
Devices (M. Osi_ski, S. J. Chua, and S. F. Chichibu, Eds.), SPIE International
Symposium on Photonics and Applications ISPA ’99, Singapore, 30
Nov. – 3 Dec. 1999, Proceedings of SPIE, Vol. 3896, pp. 86-97.
305. M. Osi_ski and G. A. Smolyakov, “Integrated thermal-electrical-optical
simulator of vertical-cavity surface-emitting lasers”, Design, Fabrication,
and Characterization of Photonic Devices (M. Osi_ski, S. J. Chua, and
S. F. Chichibu, Eds.), SPIE International Symposium on Photonics and Applications
ISPA ’99, Singapore, 30 Nov. – 3 Dec. 1999, Proceedings of
SPIE, Vol. 3896, pp. 143-154.
306. M. Osi_ski, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P.
Ma_kowiak, and W. Nakwaski, “Simple theory of steam oxidation of
AlAs”, Design, Fabrication, and Characterization of Photonic Devices
(M. Osi_ski, S.-J. Chua, and S. F. Chichibu, Eds.), SPIE International
Symposium on Photonics and Applications ISPA ’99, Singapore, 30
Nov. – 3 Dec. 1999, Proceedings of SPIE, Vol. 3896, pp. 534-546.
307. P. G. Eliseev, M. Osi_ski, H. Li, and I. V. Akimova, “Recombination
balance in green-light-emitting GaN/InGaN/AlGaN quantum wells”,
Applied Physics Letters 75, no. 24, pp. 3848-3850 (13 December 1999).
308. M. Osi_ski, V. A. Smagley, C. Fu, G. A. Smolyakov, and P. G. Eliseev,
“Design of InGaN/GaN/AlGaN vertical-cavity surface-emitting lasers
using electrical-thermal-optical simulation”, Physics and Simulation
of Optoelectronic Devices VIII (R. Binder, P. Blood, and M. Osi_ski, Eds.),
SPIE International Symposium on Optoelectronics 2000, San Jose, California,
24-28 January 2000, Proceedings of SPIE, Vol. 3944, pp. 40-55.
309. M. Osin´ski and G. A. Smolyakov, “Design of InGaN/GaN/AlGaN
VCSELs using the effective frequency method”, Invited Paper, International
Symposium on Ultra-Parallel Optoelectronics, Kawasaki, Japan, 3-4 February
2000.
310. P. G. Eliseev, M. Osi_ski, J. Lee, T. Sugahara, and S. Sakai, “Band-tail
model and temperature-induced blue-shift in photoluminescence spectra
of InxGa1-xN grown on sapphire”, Special Issue on III-V Nitrides
and SiC, Journal of Electronic Materials 29, no. 3, pp. 332-341 (March
2000).
311. Y.-R. Zhao, J. Lee, and M. Osi_ski, “Dry etching of vertical
facets in GaN using inductively coupled plasma”, Technical Digest,
The 12th Annual Rio Grande Regional Symposium on Advanced Materials, Albuquerque,
New Mexico, 16 October 2000, Paper A10, p. 16.
312. J. Lee, P. G. Eliseev, M. Osi_ski, T. Sugahara, and S. Sakai, “Optical
characterization of InGaN/GaN multiple quantum wells grown on sapphire
and GaN substrates”, Technical Digest, The 12th Annual Rio Grande
Regional Symposium on Advanced Materials, Albuquerque, New Mexico, 16
October 2000, Paper C8, p. 26.
313. J. Yellowhair, B. Bai, Y.-R. Zhao, D. Ramirez, T.-L. Arviso-Jeans,
P. M. Varangis, and M. Osi_ski, “Effects of dielectric encapsulants
on intermixing of InGaAs/GaAs quantum wells by impurity-free vacancy diffusion”,
Technical Digest, The 12th Annual Rio Grande Regional Symposium on Advanced
Materials, Albuquerque, New Mexico, 16 October 2000, Paper C9, p. 27.
314. G. A. Smolyakov, P. G. Eliseev, and M. Osi_ski, “Analysis of
vector LP modes in VCSELs using the effective frequency method”,
Physics and Simulation of Optoelectronic Devices IX (Y. Arakawa, P. Blood,
and M. Osi_ski, Eds.), SPIE International Symposium on Optoelectronics
2001, San Jose, California, 22-26 January 2001, Proceedings of SPIE, Vol.
4283, pp. 113-128.
315. W. Nakwaski, P. Ma_kowiak, and M. Osi_ski, “Modelling of radial
steam oxidation of AlAs layers in cylindrically symmetric mesa structures
of vertical-cavity surface-emitting lasers”, Optica Applicata 31(#2),
pp. 289-299, 2001.
316. M. Osi_ski, V. A. Smagley, G. A. Smolyakov, and P. G. Eliseev, “Design
of InGaN/GaN/AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical
simulation”, Special Issue on Semiconductor Lasers, IEEE Journal
of Selected Topics in Quantum Electronics 7 (#2), pp. 270-279, March/April
2001.
317. M. Osi_ski, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P.
Ma_kowiak, and W. Nakwaski, “Temperature and thickness dependence
of steam oxidation of AlAs in cylindrical mesa structures”, IEEE
Photonics Technology Letters 13 (#7), pp. 687-689, July 2001.
318. A. A. El-Emawy, H.-J. Cao, E. Zhmayev, J.-H. Lee, D. Zubia, and M.
Osi_ski, “MOCVD growth of InNxAs1-x on GaAs using dimethylhydrazine”,
Physica Status Solidi (b) 228 (#1), pp. 263-267, 5 November 2001.
319. Y.-R. Zhao, J. Yellowhair, J.-H. Lee, S. Zhang, A. K. Raub, R.-H.
Wang, P. M. Varangis, A.-R. El-Emawy, M. F. Vilela, and M. Osi_ski, “Selective
intermixing of InGaAs/GaAs/AlGaAs quantum wells with spin-on-glass/MgF2
grating caps”, Design, Fabrication, and Characterization of Photonic
Devices II (M. Osi_ski, S.-J. Chua, and A. Ishibashi, Eds.), International
Symposium on Photonics and Applications ISPA ’01, Singapore, 27-30
Nov. 2001, Proceedings of SPIE, Vol. 4594, pp. 144-155.
320. Y.-R. Zhao, Y.-C. Xin, R.-H. Wang, M. F. Vilela, G. A. Smolyakov,
and M. Osi_ski, “Effects of impurity-free intermixing on InGaAs/GaAs/AlGaAs
broad-area diode laser characteristics”, Design, Fabrication, and
Characterization of Photonic Devices II (M. Osi_ski, S.-J. Chua, and A.
Ishibashi, Eds.), International Symposium on Photonics and Applications
ISPA ’01, Singapore, 27-30 Nov. 2001, Proceedings of SPIE, Vol.
4594, pp. 237-249.
321. D. L. Barton and M. Osi_ski, Degradation mechanisms in group-III
nitride devices, accepted for Critical Review of Gallium Nitride Based
Technologies, SPIE International Symposium on Optoelectronics 2002, San
Jose, California, 21-22 January 2002.
322. G. A. Smolyakov, P. G. Eliseev, and M. Osi_ski, “Effects of
resonant mode coupling on near- and far-field characteristics in InGaN-based
lasers”, Physics and Simulation of Optoelectronic Devices X (P.
Blood, M. Osi_ski,