ECE 575: Syllabus
Course title: Junction Devices
Course number: ECE 575
Course discipline: Electrical Engineering
Course description: This course will cover advanced heterojunction electronic devices including heterojunction bipolar transistors and modulation doped, field effect transistors.
Course delivery: This course will be delivered using classroom lectures and will make use of the WEBCT system. This powerful technology has many useful features - eg. it allows you to interact with fellow students in this class (and the advisor) through a private 24/7 bulletin board. (see: How this course Works for all the WebCT features)
Course Text: NONE: Course handouts will be provided
Course date: Fall 2004
Location: Mostly on the web see "How this course Works"
Meeting day(s): Tuesday/Thursday
Meeting time(s): 11.00 - 12.15
Prerequisite(s): EECE 471. This is an advanced course and you will need to have previously covered semiconductor physics and bipolar transistor behavior.
List of Topics (not necessarily in order):
This course is intended to provide the student with an advanced level knowledge of Si-based and III-V based, HBT and MODFET transistors. Students will learn the theory of doped heterojunctions, heterojunction bipolar devices and modulation doped FETs. They will also combine this theory with an analysis of how these devices are fabricated, and how design influences behavior.
This is an advanced course and you will need to have previously covered semiconductor physics, bipolar transistor behavior and FET behavior.
Instructor: Professor Stephen D. Hersee (More at www.chtm.unm.edu/hersee)
E-mail address: shersee@chtm.unm.edu
Office Location: CHTM, Room 112B (map can be found at: www.chtm.unm.edu, then select "Visit CHTM")
Office Hours: by appointment
Office Phone: 505 272 7823
Fax: 505 272 7801
Dr. Hersee is a tenured, Full Professor in the Electrical and Computer Engineering Department of UNM. He has been a member of the EECE department since 1991 and has taught semiconductor processing, field-effect devices and junction devices. Dr. Hersee is a Fellow of the IEEE and a full-time member of the Center for High Technology Materials where he conducts research in semiconductor materials and devices. Dr. Hersee has published and presented over 120 peer reviewed papers and holds 5 patents. He has graduated 1 MS and 8 Ph.D students while at UNM. (More at www.chtm.unm.edu/hersee)
The WEBCT software system allows you to check your grades at any time during the course.
The grading scheme will be as follows: