Technical Overview. In this project, we are investigating the performance type II InAs/InGaSb superlattices for MWIR/LWIR detection. The material is designed, grown and fabricated in our research group and sent to a DOD lab for detailed characterization. We have recently fabricated a high performance InAs/GaSb SLS detector with a 5 um maximum sensitivity operating at room temperature.

Funding Agencies.
• Army Research Laboratory
• Defense Advanced Research Projects Agency (DARPA)

Personnel. Prof. Dawson, Dr.Yagya Sharma, Dr. Jean-Baptiste Rodriguez and Elena Plis

Collaborators. S.W. Kennerly (ARL); P.Uppal/D. Carothers (BAE systems Inc).

Selected Publications.
E. Plis, N. R. Weisse-Bernstein, L.R. Dawson and S. Krishna “InAs/GaSb SLS Infrared Photovoltaic Detectors grown on GaAs substrates” Electronic Materials Conference, June 2005.

E. Plis, P. Rotella, S. Raghavan, L. R. Dawson, S. Krishna, D. Le and C. P. Morath, “Growth of room-temperature ‘‘arsenic free’’ infrared photovoltaic detectors on GaSb substrate using metamorphic InAlSb digital alloy buffer layers” Appl. Phys. Lett., 82, 1658, 2003.

E. Plis, N. W. Bernstein, P. Rotella and S. Krishna, “Mid Wave Infrared InAs/GaSb Strain Layer Superlattice Detectors Operating at 250K ”, (Submitted to Appl. Phys. Lett)

Updated 2/14/06

Strained Layer Superlattice IR Detectors