The goal of this aspect of our research is to apply the fundamentals of semiconductor electronics engineering to novel semiconductor heterostructures. We are currently pursuing development of mid infrared optoelectronic devices such as lasers, detectors and thermophotovoltaic devices. We have explored the use of InAs/InGaAs quantum dots in a quantum well (DWELL) and more recently InAs/(In,Ga)Sb type-II strain layer superlattices (SLS) for the development of IR detectors. We are pursuing the achievement of InGaSb-based IR lasers and detectors, building upon the recent demonstration of optically pumped 3 mm lasers at CHTM. Finally, we are working towards the development of GaAs based thermophotovoltaic (TPV) power generation devices.

 

Updated 2/14/06

Mid-IR Optoelectronic Device Development