Publications

This page contains a running list of our group's recent publications. New! Several of our most recent papers may be now viewed in Adobe Reader.

Recent News

The bibliography is presented in reverse chronological order.

 

Invited Papers & Book Chapters

Optoelectronic Properties of Self-Assembled InAs/InGaAs Quantum Dots, III-V Semiconductor Heterostructures:Physics and Devices (2003) Editor:Will Z.Cai

2009

J. R. Andrews,S. R. Restaino, T. E. Vandervelde, J. S. Brown, Y. Sharma, S. Lee, S. W. Teare,  A. Reisinger,M. Sundaram, and S. Krishna, "Comparison of Long-Wave Infrared Quantum-Dots-in-a-Well and Quantum-Well Focal Plane Arrays", IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 56, NO. 3, MARCH 2009

A. Alizadeh, D. Hays, S. T. Taylor, C. Keimel, K. R. Conway,L. Denault, K. Krishnan, V. H. Watkins, R. Neander,J.S. Brown, A. Stintz, S. Krishna, M. Blumin, I. Saveliev,H. E. Ruda, E. Braunstein, and C. Jones, “Epitaxial growth of 20 nm InAs and GaAs quantum dots on GaAs through block copolymer templated SiO2 masks” JOURNAL OF APPLIED PHYSICS 105, 054305(2009)

 

2008

V. Gopal E. Plis, J.-B. Rodriguez, C. E. Jones, L. Faraone,  and S. Krishna, “Modeling of electrical characteristics of midwave type II InAs/GaSb strain  layer superlattice diodes”, JOURNAL OF APPLIED PHYSICS 104, 124506, (2008)

A Barve, S Shah, J Shao, T Vandervelde, R Shenoi, W Jang, and S Krishna, "Reduction in dark current using resonant tunneling barriers in quantum dots-in-a-well long wavelength infrared photodetector" Applied Physics Letters 93, 131115 (2008)

S. Jit, A. Bandara Weerasekara, R. C. Jayasinghe, S. G. Matsik, A. G. Unil Perera, M. Buchanan, G. Irwin Sproule, H. C. Liu, A. Stintz, S. Krishna, S. P. Khanna, M. Lachab, and E. H. Linfield, “Dopant Migration-Induced Interface Dipole Effect in n-Doped GaAs/AlGaAs Terahertz Detectors”,  IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 10, OCTOBER 2008

E. Plis, H. S. Kim, G. Bishop, S. Krishna, K. Banerjee, and S. Ghosh, ”Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors”, Appl. Phys. Lett. 93, 123507 (2008)

P. Martyniuk, S. Krishna, and A. Rogalski, “Assessment of quantum dot infrared photodetectors for high temperature  Operation”, JOURNAL OF APPLIED PHYSICS 104, 034314 (2008)

T. Vandervelde, M.Lenz, E. Varley, A. Barve, J. Shao, R.V. Shenoi, D. Ramirez, W.Jang, Y.Sharma,and Sanjay Krishna, Quantum Dots-in-a-Well Focal Plane Arrays” IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 14, NO. 4, JULY/AUGUST (2008)

H.S. Kim, E. Plis, J.B. Rodriguez, G. Bishop, Y.D. Sharma and S. Krishna, "N-type ohmic contact on type-II InAs/GaSb strained layer superlattices", ELECTRONICS LETTERS  Vol. 44 No. 14 (2008)

R. V. Shenoi,  R. S. Attaluri, A. Siroya, J. Shao, Y. D. Sharma, A. Stintz, T. E. Vandervelde, and S. Krishna, “Low-strain InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetector”, J. Vac. Sci. Technol. B 26(3) PP-1136-1139 May/Jun (2008)

G. Bishop, E. Plis,a_ J. B. Rodriguez, Y. D. Sharma, H. S. Kim, L. R. Dawson, and S. Krishna, "nBn detectors based on InAs/GaSb type-II strain layer superlattice”,  J. Vac. Sci. Technol. B 26(3) PP-1145-1148 May/Jun (2008)

T. V. Chandrasekhar Rao and J. Antoszewski J. B. Rodriguez, E. Plis, S. Krishna And L. Faraone, “Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice”, J. Vac. Sci. Technol. B 26(3) PP1081-1083, May/Jun (2008)

H. S. Kim, E. Plis, J. B. Rodriguez, G. D. Bishop, Y. D. Sharma, L. R. Dawson, S. Krishna, J. Bundas, R. Cook, D. Burrows, R. Dennis, K. Patnaude, A. Reisinger, and M. Sundaram, "Mid-IR focal plane array based on type-II InAs/GaSb strain layer superlattice detector with nBn design” Appl. Phys. Lett. 92, 183502 (2008)

Ahmed I. Lobad, E. A. Pease, R. Dawson, Sanjay Krishna, and L. A. Vern Schlie, “Extraction of radiative and nonradiative rates in Sb based midwave infrared lasers using a novel approach”, REVIEW OF SCIENTIFIC INSTRUMENTS 79, PP-033904(2008)

R. P. Prasankumar, R. S. Attaluri, R. D. Averitt, J. Urayama, N. Weisse- Bernstein, P. Rotella, A. D. Stintz, S. Krishna, and A. J. Taylor, “Ultrafast carrier dynamics in an InAs/InGaAs  quantum dots-in-a-well heterostructure”,  Vol. 16, No. 2 pp. 1165 OPTICS EXPRESS (2008)

T. V. Chandrasekhar Rao,a_ J. Antoszewski, and L. Faraone,J. B. Rodriguez, E. Plis, and S. Krishna, “Characterization of carriers in GaSb/InAs superlattice grown on conductive GaSb substrate”, APPLIED PHYSICS LETTERS 92, 012121 (2008)

Conference Papers

S. Krishna, E. Plis, H. Kim, G. Bishop, A. Khoshakhlagh, Y. Sharma, R. Dawson, A. Reisinger, and M. Sundaram, “Type-II strain layer superlattice focal plane arrays using an nBn design9 th International Conference on  Mid-Infrared Optoelectronics: Materials and Devices 7 th - 11 th September 2008, Freiburg, Germany

S. Krishna, Mid Infrared Focal Plane Arrays with Nanoscale Quantum Dots and Superlattices” ,   8th IEEE Conference on Nanotechnology, 2008.

Elena Plis, Ha Sul Kim, Greg Bishop, Jean-Baptiste Rodriguez, Arezou Khoshakhlagh, YagyaSharma, Paul Rotella, Ralph  Dawson Sanjay Krishna, Axel  Reisinger, Mani Sundaram ,”Mid-Wave Infrared nBn InAs/GaSb Strained Layer Superlattice Detectors Grown by  Molecular Beam Epitaxy”, 15th International Conference on Molecular Beam Epitaxy, 3-8 August 2008

J. Shao, T. Vandervelde, W. Jang, A. Stintz, and S. Krishna,High Operating Temperature InAs Quantum Dot Infrared Photodetector via Selective Capping Techniques” ,  8th IEEE Conference on Nanotechnology, 2008.

R.Shenoi, J. Hou, Y. Sharma, J. Shao, T.Vandervelde, and S. Krishna, “Low strain Quantum Dots in a Double Well Infrared Detectors” , Infrared Spaceborne Remote Sensing and Instrumentation XVI SPIE 7082   SPIE 7082, 708207 (2008)

J. Andrews, S. Restaino, S. Teare, S. Krishna, L. Lester, C. Wilcox, Ty Martinez, and F. Santiago,  “Precision radiometry using a tunable InAs/InGaAs quantum dot in a well infrared focal plane array” Infrared Spaceborne Remote Sensing and Instrumentation XVI Proc. SPIE 7082, 70820T (2008)

Thomas E. Vandervelde, Michael C. Lenz II, Eric Varley, Ajit Barve, Jiayi Shao, Rajeev Shenoi, David A. Ramirez, Wooyong Jang, Yagya  Sharma, and Sanjay Krishna, “Multicolor quantum dots-in-a-well focal plane arrays” Infrared Technology and Applications XXXIV Proc. SPIE Vol.(6940) , PP694003 (Apr. 10, 2008)

E. Plis, J-B Rodriguez, G. Bishop, H. Kim, A. Khoshakhlagh, Y. Sharma, R. L. Dawson,and S.Krishna, Reduction of leakage currents in nBn-based long-wave infrared detectors using type-II InAs/GaSb superlattices(6940-11)”,Infrared Technology and Applications XXXIV Proc.  SPIE Vol.(6940) 2008, (Apr. 10, 2008)

 

 

2007

A. Khoshakhlagh, J. B. Rodriguez, E. Plis, G. D. Bishop, Y. D. Sharma, H. S. Kim, L. R. Dawson, and S. Krishna, “Bias dependent dual band response from InAs/Ga„In…Sb type II strain layer superlattice detectors”, APPLIED PHYSICS LETTERS 91, 263504(2007)

S. Mallick, K. Banerjee, S. Ghosh,E. Plis, J.B.Rodriguez, S. Krishna, and C. Grein, “Ultralow noise midwave infrared InAs–GaSb strain layer superlattice avalanche photodiode” , APPLIED PHYSICS LETTERS 91, 241111 (2007)

S. Mallick, K. Banerjee, S. Ghosh, J. B. Rodriguez, and S. Krishna, “Midwavelength Infrared Avalanche Photodiode Using InAs–GaSb Strain Layer Superlattice”, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 19, NO. 22, NOVEMBER 15(2007)

E. Plis, J. B. Rodriguez, H. S. Kim, G. Bishop, Y. Sharma,  R. Dawson, S.J.Lee, C.E.Jones, V. Gopal.and S. Krishna, "Type II InAs/GaSb strain layer superlattice detectors with p-on-n polarity", APPLIED PHYSICS LETTERS 91, 133512 (2007)

K Srinivasana, O Painter, A Stintz and S Krishna, , "Single quantum dot spectroscopy using a fiber taper waveguide near-field optic", APPLIED PHYSICS LETTERS 91, 091102(2007)

E. Varley, M. Lenz, S. J. Lee, J. S. Brown, D. A. Ramirez, A. Stintz, and S. Krishna, Axel Reisinger and Mani Sundaram, “Single bump,two-color quantum dot camera”, APPLIED PHYSICS LETTERS 91, 081120(2007)

A.B. Weerasekara, M.B.M. Rinzan, S.G. Matsik, A.G.U. Perera, M. Buchanan, H.C. Liu, G. von Winckel, A. Stintz and S. Krishna, Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity” Infrared Physics & Technology, 50,194-198 (2007)

P.V.V.   Jayaweera, S.G. Matsik, K. Tennakone, A.G.U. Perera, H.C. Liu and S. Krishna,"Spin split-off transition based IR detectors operating at high temperatures"  Infrared Physics & Technology, 50, 279-283 (2007)

J Rodriguez, E Plis, G Bishop, Y Sharma, H Kim, L Dawson and S Krishna, "nBn structure based on InAs/GaSb type-II strained layer superlattices"APPLIED PHYSICS LETTERS 91, 043514(2007)

A. B. Weerasekara, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera, M. Buchanan, H. C. Liu, G. von Winckel, A. Stintz, and S. Krishna  "n-type GaAs/AlGaAs Heterostructure detector with a 3.2 threshold frequency Optics Letters, 32 (10), 1335-1337, (2007)

S Gunapala, S Bandara, C Hill, D Ting, J Liu, Sir B Rafol, E Blazejewski, J Mumolo, S Keo, S Krishna, Y Chang and C Shott, "Demonstration of 640x512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array”, Infrared Physics & Technology 50, pp-149-155(2007)

R Attaluriand, S Krishna, M Matthews, R Steed, M Frogley and C Phillips, "Transient photoconductivity measurements of carrier lifetimes in an InAs/In0.15Ga0.85As dots-in-a-well detector"Applied Physics Letters 90, 103519(2007)

S Gunapala, S Bandara, C Hill, D Ting, J Liu, Sir B Rafol, E Blazejewski, J Mumolo, S Keo, S Krishna, Y Chang and C Shott, "640x512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array", IEEE Journal of Quantum Electronics, Vol 43, No 3, March(2007)

R. S. Attaluri, J. Shao, K. T. Posani, S. J. Lee, J. S. Brown, A. Stintz, and S. Krishna "Resonant cavity enhanced InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetector" J. Vac. Sci. Technol. B 25, 1186 (2007)

Conference Papers
 

T.E. Vandervelde, J. Shao, A. Stintz, and S. Krishna, "Investigation of Shape Engineering in InAs Quantum Dots Using Various Capping Materials", MRS Fall Meeting 2007, Boston, MA

Y. Sharma, G.Bishop, H.S. Kim, J.B. Rodriguez, E. Plis, G. Balakrishnan, L.R. Dawson, D.L. Huffaker and S. Krishna, “Type II Strain Layer Superlattices (SLS’s) grown on GaAs Substrates”,  The 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2007. LEOS 2007.

H. S. Kim, G. D. Bishop, J. B. Rodriguez, Y. Sharma, E. Plis, L. R. Dawson, and S. Krishna, “Suppressed Surface Leakage Current Using nBn Infrared Detector Based on Type II InAs/GaSb Strain Layer Superlattices”, The 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2007. LEOS 2007.

R. V. Shenoi D. A. Ramirez, Y. Sharma, R. S. Attaluri, J. Rosenberg, O. J. Painter, and S. Krishna, “Plasmon Assisted Photonic Crystal Quantum Dot Sensors”, Nanophotonics and Macrophotonics for Space Environments(6713) SPIE Optics Photonics SanDiego(2007)

Mike Lenz, Eric Varley, David Ramirez, Jay  Brown, Sang Jun Lee, Andreas Stintz, Axel Reisinger and Mani Sundaram, and S.Krishna "Demonstration of a Two-Color 320 x 256 Quantum Dots-in-a-Well Focal Plane Array." Infrared Spaceborne Remote Sensing and Instrumentation XV(6678) SPIE oPTICS Photonics San Diego(2007)

S.Krishna, "Multicolor Spectrally Adaptive Infrared Sensors Based on Nanoscale Quantum Dots" 7th IEEE International Conference on Nanotechnology Hong Kong (IEEE-NANO 2007)

J.B.Rodrigues,E. Plis, S.J.Lee, H.Kim, G.Bishop, Y. Sharma, L.R.Dawson,S. Krishna, and C Jones,“Type-II  InAs/GaSb Strain Layer Superlattice Detectors for  Higher Operating Temperatures” SPIE Int. conference on Defense and Security Symposium 9-13 April 2007 OrlandoFlorida,  SPIE 6542, Bellingham, WA  (2007).


 
2006

S.Krishna,D.Forman,  .Annamalai,P.Dowd,P.Varangis,T.Tumolillo,A.Gray,J.Zilko,K.Sun,M.Liu,J.Cumbell and D.Carothers, “Two-color focal plane arrays based on self assembled quantum dots in a well heterostructure”, Phys.Stat Sol.(C)3,No.3(2006)

Elena Plis,S.J.Lee Z.Zhu, A.Amtout and S.Krishna, "InAs/GaSb Superlattice Detectors Operating at Room Temperature", IEEE Journal of Selected Topics in Quantum Electronics vol.12,No.6 Nov./Dec.2006

U. Sakoglu, M. M. Hayat, J. S. Tyo, P. Dowd, S. Annamalai, K. T. Posani, and S. Krishna, "A statistical method for adaptive sensing  using detectors with spectrally overlapping bands,"  Applied Optics, vol. 45(2006)

B. Paskaleva, U. Sakoglu, Z. Wang, M. M. Hayat, J. S. Tyo, and S. Krishna, "Algorithmic tunability of quantum-dot infrared detectors,'' IEEE LEOS Newsletter, vol. 20, No. 5(2006).

Z.M.Zhu,P.Bhattacharya,E.Plis ans S.Krishna, “Low Dark Current InAs/GaSb type-II Superlattice Infrared Photodetectors with resonant tunneling filters”,J.Phys.D:Appl.Phys.39(2006)

E.Plis,J.B.Rodriguez,S.J.Lee and S.Krishna, “Electrochemical Sulphur passivation of InAs/GaSb SLS detectors”,  Electronics Letters Vol 42 No.21(2006)

Elena Plis, S. Annamalai, K.T. Posani, Sanjay Krishna, R.A. Rupani, and S. Ghosh, Midwave infrared type-II InAs/GaSb superlattice detectors with mixed interfaces Journal of Applied Physics 100, 014510 (2006).

  Ram S. Attaluri, S. Annamalai, K.T. Posani, Andreas Stintz, and Sanjay Krishna, Influence of Si doping on the performance of quantum dots-in-well photodetectors, Journal of Vacuum Science and Technology. B, Microelectronics and nanometer structures, Vol. 24, no. 3, 1071 (2006).
  Wenjun Fan, S. Zhang, N.-C. Panoiu, A. Abdenour, Sanjay Krishna, R.M. Osgood, Jr., K.J. Malloy, and S.R.J. Brueck, Second Harmonic Generation from a Nanopatterned Isotropic Nonlinear Material, Nano Letters, Vol. 6, 1027, (2006).
  Ram S. Attaluri, S. Annamalai, K.T. Posani, Andreas Stintz, and Sanjay Krishna, Effects of Si doping on normal incidence InAs/In0.15Ga0.85As dots-in-well quantum dot infrared photodetectors , Journal of Applied Physics, Vol. 99, 083105 (2006).
  Kalyan T. Posani, V. Tripathi, S. Annamalai, N.R. Weisse-Bernstein, Sanjay Krishna, R. Perahia, O. Crisafulli, O.J. Painter, Nanoscale quantum dot infrared sensors with photonic crystal cavity, Applied Physics Letters, Vol. 88, 151104, (2006).
  G. Balakrishnan, S.H. Huang, A. Khoshakhlagh, A. Jallipalli, P. Rotella, A. Amtout, S. Krishna, C.P. Haines, L.R. Dawson, and D.L. Huffaker, Room-temperature optically-pumped GaSB quantum well based VCSEL monolithically grown on Si (100) substrate, Electronics Letters, Vol. 42, 350, (2006).
 

Greg von Winckel, Sanjay Krishna, and E.A. Coutsias, Spectral element modelling of semiconductor heterostructures, Mathematical and Computer Modelling, Vol. 43, 582, (2006).

Conference Papers


E. Plis, S. Annamalai, K. T. Posani, S. J. Lee, and S. Krishna, Room temperature operation of InAs/GaSb SLS infrared photovoltaic detectors with cut-off wavelength ~5 µm, ” SPIE Int. conference on Defense and Security Symposium OrlandoFlorida, Proc. SPIE Vol. 6206, 62060O (May. 17, 2006)

Zhu, Zh., Plis, E., Amtout, A., Bhattacharya, P., Krishna, S, "Investigation of Surface Passivation in InAs/GaSb Strained- Layer-Superlattices Using Picosecond Excitation Correlation Measurement and Variable-Area Diode Array Surface Recombination Velocity Measurement", in Proc. Mater. Res. Soc. Symp., vol. 891, pp. 08.1-08.6 (2006)

Rodriguez, J.B., Plis, E., Lee, S.J., Dawson, L.R., Krishna, S."Structural and Optical Characterization of InAs/GaSb nanoscale superlattices for mid-infrared detection", in Proc. of IEEE Nano, vol.1, pp.100-103 (2006)

   
2005
  Kartik Srinivasan, Andreas Stintz, Sanjay Krishna, and Oskar Painter, Photoluminescence measurements of quantum-dot-containing semiconductor microdisk resonators using optical fiber taper waveguides, Physical Review B, Vol. 72, 205318, (2005).
  Sanjay Krishna, “InAs/InGaAs Quantum Dots in a Well Photodetectors”, Journal of Physics D (Applied Physics); 7 July 2005; vol.38, no.13, p.2142-50
  P. Hill, N. Weisse-Bernstein, L. R. Dawson, P. Dowd, and S. Krishna, “Activation energies for Te and Be in metamorphically grown AlSb and InxAl1–xSb layers”, Appl. Phys. Lett. 87, 092105 (2005)
  Kartik Srinivasan, Matthew Borselli, Thomas J. Johnson, Paul E. Barclay, Oskar Painter, Andreas Stintz and Sanjay Krishna “Optical loss and lasing characteristics of high-quality-factor AlGaAs microdisk resonators with embedded quantum dots”Applied Physics Letters, v.86, no.15, p.151106, 2005.
  S.Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J.Zilko, K. Sun, M. Liu, J. Campbell, D. Carothers “Demonstration of a 320 x 256 Two-Color Focal Plane Array Using InAs/InGaAs Quantum Dots in a Well Detectors”Appl. Phys. Lett, 86, 193501, 2005.
  Z. G. Hu, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera, G. Von Winckel, A. Stintz, and S. Krishna “Optical characterizations of heavily doped p-type AlxGa1–xAs and GaAs epitaxial films at terahertz frequencies’, J. Appl. Phys. 97, 093529 (2005)
  G. Balakrishnan, S.H. Huang, A. Khoshakhlagh, P. Hill, A. Amtout, S. Krishna, G.P. Donati, L.R. Dawson and D.L. Huffaker, “Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate”, IEE Electronics Letters, Vol. 41, No. 9, pg 531, 2005.
  Rinzan, MBM; Perera, AGU; Matsik, SG; Liu, HC; Buchanan, M; von Winckel, G; Stintz, A; Krishna, S “Terahertz absorption in AlGaAs films and detection using heterojunctions”, Infrared Physics & Technology;; v.47, no.1-2, p.188-194, Oct 2005
   
  Ariyawansa, G ; Perera, AGU ; Raghavan, GS ; von Winckel, G ; Stintz, A ; Krishna, S, “Effect of well width on three-color quantum dots-in-a-well infrared detectors” IEEE Photonics Technology Letters; vol.17, no.5, p.1064-6, May 2005
  Matsik, SG; Rinzan, MBM; Esaev, DG; Perera, AGU; von Winckel, G; Stintz, A; Krishna, S; Liu, HC; Byloos, MD; Oogarah, T; Sproule, GI ; Liu, K ; Buchanan, M., “Effect of doped substrate on GaAs-AlGaAs interfacial workfunction IR detector response through cavity effect” IEEE Transactions on Electron Devices; v.52, no.3, p.413-418, Mar 2005
  O. Kwon, J. Shao, M.M. Hayat and S. Krishna, “Theoretical Investigation of Quantum Dot Avalanche Photodiodes for Mid-Infrared Applications’, IEEE J. Quant. Electron., Dec 2005; v.41, no.12, p.1468-1473.
  G. von Winckel, E. A. Coutsias and S. Krishna, “Spectral Computation of Density-of-States and Intrasubband Photoabsorption in Quantum Wells’, Accepted in Journal of Mathemical and Computer Modeling
  Kartik Srinivasan, Andreas Stintz, Sanjay Krishna, and Oskar Painter” Photoluminescence measurement of quantum-dot-containing semiconductor microdisk resonators using optical fiber taper waveguides” Physical Review B 72, 205318 (2005)
2004
  U. Sakoglu, J. S. Tyo, M. M. Hayat, S. Raghavan, and S. Krishna,” Spectrally adaptive infrared photodetectors using bias-tunable quantum dots” J. Opt. Soc. Am. B. Vol 21, p.7, Jan 2004.
  A. Amtout, S. Raghavan, P. Rotella , G. von Winckel, A. Stintz and S. Krishna “Theoretical Modeling And Experimental Characterization of InAs/InGaAs Quantum Dots In a Well Detector, Journal of Applied Physics, 96, 3782, October 2004.
  M. B. M. Rinzan, D. G. Esaev, A. G. U. Perera, S. G. Matsik, G. von Winckel, A. Stintz, and S. Krishna, “Free Carrier Absorption in Be-doped epitaxial AlGaAs thin films” Applied Physics Letters, 85, 5236, 2004.
  S. Raghavan, D. Forman, P. Hill, N. W- Bernstein, G. von Winckel, P. Rotella, S. Krishna, S. W. Kennerly and J. W. Little, “Normal-Incidence InAs/InGaAs Quantum Dots-in-a-Well Detector Operating in the Long Wave Infrared Atmospheric Window, Journal of Applied Physics 96, 1036 (2004).
  P. Rotella, G. von Winckel, S. Raghavan, A. Stintz, Y. Jiang, and S. Krishna, “Study of structural and optical properties of quantum dots-in-a-well heterostructures”, J. Vac. Sci. Technol. B 22, 1512 (2004)
  “Normal Incidence InAs/InGaAs Quantum dots in a Well Detectors Spanning the Long Wave Atmospheric Window”, Journal of the Korean Physical Society, Vol.45, S, 875, Dec 2004.
  L.A. Farina, K.M. Lewis, C. Kurdak, S. Ghosh, S. Krishna and P. Bhattacharya, “ Drag Coupling between a thin Al film and a two-dimensional electron gas near the superconducting transition”, Physica E 22, 341-344, 2004.
2003
  E. Plis, P. Rotella, S. Raghavan, L. R. Dawson, S. Krishna, D. Le and C. P. Morath, “Growth of room-temperature ‘‘arsenic free’’ infrared photovoltaic detectors on GaSb substrate using metamorphic InAlSb digital alloy buffer layers” Appl. Phys. Lett., 82, 1658, 2003.
  S. Raghavan, P. Rotella, A. Stintz, K.J. Malloy, S. Krishna, A.L Gray, “Structural and optical characterization of rapid thermally annealed InAs/In0.15Ga0.85As dots-in-well structure”, J. Cryst. Growth, 247, 269-274, 2003.
  P. Rotella, S. Raghavan, A. Stintz, B. Fuchs, S. Krishna, C. Morath, D. Le and S.W. Kennerly, “Normal incidence InAs/InGaAs dots-in-well detectors with current blocking AlGaAs layer”, J. Cryst. Growth, 251/1-4 pp. 787-793, 2003.
  S. Krishna, S. Raghavan, G von Winckel, P. Rotella, A. Stintz, , C. Morath, D. A. Cardimona, and S.W. Kennerly, “Two Color InAs/InGaAs Dots-in-a-Well Detector with Background Limited Performance at 91K”, Appl. Phys. Lett., 82, 2574, 2003.
  B. Kochman, A.D. Stiff-Roberts, S. Chakrabarti, J.D. Phillips, S. Krishna, J. Singh and P. Bhattacharya, “ Absorption, Carrier Lifetime, and Gain in InAs-GaAs Quantum Dot Infrared Photodetectors’, IEEE. J. Quant. Electron., 39, 459, 2003.
  S. Krishna, S. Raghavan, G von Winckel, A. Stintz, , G. Ariyawansa, S.G. Matsik and A.G.U. Perera, “Three-Color (lambda1 ~ 3.8 um, lambda2 ~ 8.5 um and lambda3 ~ 23.2 um) InAs/ InGaAs Quantum Dots In a Well Detector”, Appl. Phys. Lett., 83, 2745, October 2003.
2002
  S. Krishna, A. Stiff, P. Bhattacharya, and S. Kennerly “ Hot Dot Detectors”, IEEE Circuits and Devices, p.14, January 2002.
  K. M. Lewis, Ç. Kurdak, S. Krishna and P. Bhattacharya, “Charge transformer to enhance noise performance of single-electron transistor amplifiers in high-capacitance applications”, Appl. Phys. Lett.,80, 142, 2002.
  X. Bai, Ç. Kurdak, S. Krishna, and P. Bhattacharya, “Quantum well based phonon detectors; performance analysis”, Physica B, 316-317, 362, 2002.
  S. Krishna, S. Raghavan, A.L. Gray, A. Stintz and K.J. Malloy, “Characterization of Rapid-Thermal-Annealed InAs/In0.13Ga0.87As DWELL Dots using X-Ray Diffraction and Photoluminescence”, Appl. Phys. Lett., Vol. 80, 3898, 2002.
  S. Raghavan, P. Rotella, A. Stintz, B. Fuchs, S. Krishna, C. Morath, D. A. Cardimona, and S.W. Kennerly, “High-Responsivity, Normal-Incidence Long-Wave Infrared (lambda~ 7.2 um) InAs/In0.15Ga0.85As Dots-in-a-Well Detector”, Appl. Phys. Lett., 81, 1369, 2002.
  C.P. Morath, D. Le, H.E. Norton, D.A. Cardimona, S. Ragahavan, P. Rotella, S. A. Stintz, B. Fuchs, S. Krishna “High responsivity, LWIR, dots-in-a-well quantum dot infrared photodetector” Infra. Phys. & Tech, v.44, no.5-6, p.517-526, OCT-DEC 2003
  J. Sabarinathan, P. Bhattacharya, P-C. Yu, S. Krishna, J. Cheng, D. G. Steel, “An electrically injected InAs’GaAs quantum-dot photonic crystal microcavity light-emitting diode”, Appl. Phys. Lett., 81, 3876, , 2002
  A. D. Stiff-Roberts, S. Krishna, P. Bhattacharya and S.W. Kennerly, “Low-bias, high-temperature performance of a normal-incidence InAs’GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier”, J. Vac. Sci. Tech. B, 20, 1185, 2002.
2001
  S. Krishna, P. Bhattacharya, J. Singh, T. Norris and J. Urayama, P.J. McCann and K. Namjou, “Intersubband Gain and Stimulated Emission in Long Wavelength (lambda=13 um) Intersubband Quantum Dot Emitters”, IEEE J. Quant. Electronics, 37, 1066, 2001.
  A. Stiff, S. Krishna, P. Bhattacharya, and S. Kennerly “High-detectivity, normal-incidence, mid-infrared (~4 µm)InAs/GaAs quantum-dot detector operating at 150 K”, Appl. Phys. Lett.,79, 21, 2001.
  P. Bhattacharya, S. Krishna, J. Phillips, P. J. McCann and K. Namjou (INVITED), “ Carrier dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors”, J. Crystal Growth, 227, 27, 2001.
  A. Stiff, S. Krishna, P. Bhattacharya, and S. Kennerly “Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector”, IEEE J. Quant. Electron..,37, 1412, 2001.
2000
  S. Krishna, P. Bhattacharya, P.J. McCann and K. Namjou, “ Room-temperature long-wavelength (lambda = 13.3 µm) unipolar quantum dot intersubband laser”, Electronic Letters, 36, 1550, 2000.
  S. Krishna, O.Qasaimeh, P. Bhattacharya, P.J. McCann and K.Namjou, “ Room-temperature far infrared emission from self-organized InGaAs/GaAs quantum dot laser”, Appl. Phys. Lett.,76, 3355, 2000.
  S. Krishna, J. Sabarinathan, K. Linder, P. Bhattacharya, B. Lita and R.S. Goldman, “ Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots”, J. Vac. Sci. Tech. B, 18, 1502, 2000.
  P. Bhattacharya, D. Klotzkin, O. Qasaimeh, W. Zhou, S.Krishna, and D. Zhu (INVITED), “ High-speed modulation and switching characteristics of In(Ga)As/Al(Ga)As self-organized quantum dot lasers”, J. of Select. Top. in Quant. Electron., 6, 426, 2000.
1999
  S. Krishna, D. Zhu, J. Xu, K. K. Linder, O. Qasaimeh, P. Bhattacharya and D. L. Huffaker, “Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room temperature emission at 1.3 um”, J. Appl. Phys., 86, 6135, 1999.
  K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, P. Bhattacharya, and J. C. Jiang, “Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates”, Appl. Phys. Lett., 74, 1355, 1999.
  O. Qasaimeh, W. D. Zhou, J. Phillips, S. Krishna, P. Bhattacharya, and M. Dutta, “Bistability and self-pulsation in quantum-dot lasers with intracavity quantum-dot saturable absorbers”, Appl. Phys. Lett., 74, 1654, 1999.
  W.Zhou, O. Qasaimeh, J.Phillips, S.Krishna, and P. Bhattacharya, “Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers”, Appl. Phys. Lett., 74, 783, 1999.
  K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, and P. Bhattacharya, “Growth and electroluminescent properties of self-organized In¬0.4Ga0.6As/GaAs quantum dots grown on silicon”, J. Vac. Sci. Technol. B, 17 , 1116, 1999.
  S. Krishna, K. Linder, and P. Bhattacharya, “ Photoluminescence linewidth of self-organized In0.4Ga0.6As/GaAs quantum dots grown on InGaAlAs stressor dots”, J. Appl. Phys., 86, 4691, 1999.